An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

An apparatus includes an ionization chamber and an electron source device at least partially disposed inside the ionization chamber. The ionization chamber is configured to receive at least one chemical and provide plasma having ionized chemicals. The electron source device includes at least one filament configured to generate electrons, and a cathode configured to emit secondary electrons from the front surface when the electrons from the at least one filament hit the back surface of the cathode. The front surface of the cathode is shaped convex facing inside the ionization chamber.

An electron beam image acquisition apparatus includes a deflector to deflect an electron beam, a deflection control system to control the deflector, a measurement circuitry to measure, while moving a stage for placing thereon a substrate on which a figure pattern is formed, an edge position of a mark pattern arranged on the stage by scanning the mark pattern with an electron beam, a delay time calculation circuitry to calculate, using information on the edge position, a deflection control delay time which is a delay time to start deflection control occurring in the deflection control system, a correction circuitry to correct, using the deflection control delay time, a deflection position of the electron beam, and an image acquisition mechanism to include the deflector and acquire an image of the figure pattern at a corrected deflection position on the substrate.

A Bernas ion source having a shield is disclosed. The shield is disposed between the distal portion of the filament and the first end of the chamber and serves to confine the plasma to the region between the shield and the second end of the chamber. The shield may be electrically connected to the negative leg of the filament so as to be the most negatively biased component in the chamber. In other embodiments, the shield may be electrically floating. In this embodiment, the shield may self-bias. The shield is typically made of a refractory metal. The use of the shield may reduce back heating of the filament by the plasma and reduce the possibility for thermal runaway. This may allow denser plasmas to be generated within the chamber.

The invention provides an ion source structure of an ion implanter, which comprises an arc chamber, a filament in the arc chamber, and a cathode in the arc chamber, wherein the cathode has an upper surface and a lower surface, and at least one of the upper surface and the lower surface is non-planar.

Provided is an ion gun that is capable of obtaining a higher plasma efficiency. This ion gun comprises: a first cathode 21 that is formed in a disc shape; a second cathode 12 that is formed in a disc shape and has an ion beam extraction hole 101a provided thereto; a first permanent magnet 14 that is disposed between the first cathode and the second cathode, and that is formed in a cylindrical shape; an anode 23 that has a cylindrical region 35a and an extending region 25a provided to one end of the cylindrical region; and an insulating material 26 that keeps the anode electrically insulated from the first cathode, the second cathode, and the first permanent magnet, all of which are electrically connected. The cylindrical region of the anode is disposed inside the inner diametrical position of the first permanent magnet, and the extending region of the anode is disposed so as to cross over the inner diametrical position of the first permanent magnet and to face the first cathode.

Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal.

The present invention discloses a positive and negative ion source based on radio-frequency inductively coupled discharge, comprising a tube, a middle portion of which is communicated with an intake pipe; discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube; one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; the other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a sealed manner via a sidewall, and the third cover plate is connected with a negative ion extraction gate via an insulating medium; and the negative ion extraction gate is electrically connected to a positive pole of the DC power supply. In the present invention, the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved.

The present invention discloses a positive and negative ion source based on radio-frequency inductively coupled discharge, comprising a tube, a middle portion of which is communicated with an intake pipe; discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube; one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; the other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a sealed manner via a sidewall, and the third cover plate is connected with a negative ion extraction gate via an insulating medium; and the negative ion extraction gate is electrically connected to a positive pole of the DC power supply. In the present invention, the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved.