A method may include providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising an insulator layer and a silicon layer. The silicon layer may be disposed on the insulator layer, where the silicon layer comprises a first silicon thickness variation. The method may include forming an oxide layer on the silicon layer, where the oxide layer has a uniform thickness. The method may include selectively etching the oxide layer on the silicon layer, wherein the oxide layer comprises a first non-uniform oxide thickness. After thermal processing of the SOI substrate in an oxygen ambient, the non-uniform oxide thickness may be configured to generate a second silicon thickness variation in the silicon layer, less than the first silicon thickness variation.

A multi-electron beam imaging apparatus is disclosed herein. An example apparatus at least includes an electron source for producing a precursor electron beam, an aperture plate comprising an array of apertures for producing an array of electron beams from said precursor electron beam, an electron beam column for directing said array of electron beams onto a specimen, where the electron beam column is configured to have a length less than 300 mm, and where the electron beam column comprises a single individual beam crossover plane in which each of said electron beams forms an intermediate image of said electron source, and a single common beam crossover plane in which the electron beams in the array cross each other.

Embodiments of the present disclosure may be used for patterning a layer in a 5 nm node or beyond fabrication to achieve an end-to-end distance below 35 nm. Compared to the state of the art technology, embodiments of the present disclosure reduce cycle time and cost of production from three lithographic processes and four etching processes to one lithographic process and three etch processes.

A semiconductor apparatus according to an embodiment is a semiconductor apparatus including substrate having a recess provided at a first substrate face, a plurality of through holes provided in a predetermined region of the recess, and a plurality of protrusions provided on the recess in the predetermined region.

A semiconductor apparatus according to an embodiment is a semiconductor apparatus including substrate having a recess provided at a first substrate face, a plurality of through holes provided in a predetermined region of the recess, and a plurality of protrusions provided on the recess in the predetermined region.

Sample stage, e.g. for use in a scanning electron microscope. The sample stage includes a base, a sample carrier, and an actuator assembly arranged for moving the sample carrier in at least one direction substantially parallel to the base. The actuator assembly is arranged so as not to contribute to the mechanical stiffness of the sample stage from the sample carrier to the base.

An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.

To realize a multi-beam formation device that can stably machine a fine pattern using complementary lithography, provided is a device that deforms and deflects a beam, including an aperture layer having a first aperture that deforms and passes a beam incident thereto from a first surface side of the device and a deflection layer that passes and deflects the beam that has been passed by the aperture layer. The deflection layer includes a first electrode section having a first electrode facing a beam passing space in the deflection layer corresponding to the first aperture and a second electrode section having an extending portion that extends toward the beam passing space and is independent from an adjacent layer in the deflection layer and a second electrode facing the first electrode in a manner to sandwich the beam passing space between the first electrode and an end portion of the second electrode.

A sample carrier capable of preventing damage to a support stage on which a sample holder is placed while ensuring a sufficient level of conveyance speed includes a sample holder, a holder mounting member, and a transport portion. The transport portion has a drive source (constant-speed motor), a rotary member (second toothed wheel), a guide portion (linear guide), and a rod. The rotary member is rotated about its axis of rotation by the drive source. The guide portion operates to guide the holder mounting member in a linear direction perpendicular to the axis of rotation of the rotary member. The rod is rotatably coupled to the rotary member and to the holder mounting member and has a coupled portion coupled to the rotary member. At a midpoint of the range of movement of the holder mounting member, the shortest distance from the coupled portion to the guide portion is greatest.

In one embodiment, a writing data generation method is for generating writing data used by a multi-charged particle beam writing apparatus. The writing data generation method includes referring to library data in which a vertex sequence including a plurality of vertices is registered, and extracting a portion of an outer line of a figure contained in design data, the portion corresponding to the vertex sequence, and representing the extracted portion by information which identifies the vertex sequence and information which indicates a connection method for the plurality of vertices of the vertex sequence, and generating the writing data.