An ion implanter includes a beam scanner that performs a scanning with an ion beam in a scanning direction perpendicular to a traveling direction of the ion beam, and a beam profiler that is disposed downstream of the beam scanner and measures a beam current distribution of the ion beam when the scanning by the beam scanner is performed. The beam profiler includes an aperture array that includes a first aperture and a second aperture, a cup electrode array that is disposed to be fixed with respect to the aperture array, the cup electrode array including a first cup electrode and a second cup electrode, and a plurality of magnets.

A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has multiple grounding electrodes, grounding pads located at its edges, and a polymer thin film including multiple areas each covering only one grounding electrode. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a shadow mask below the poling source, and a Z-elevator to raise the workpiece carrier toward the shadow mask and poling source. When the workpiece in the workpiece carrier is raised to contact the underside of the shadow mask, multiple openings of the shadow mask expose only the corresponding multiple thin film areas of the workpiece to the plasma; meanwhile, conductive grounding terminals on the underside of the shadow mask electrically connect the grounding pads of the workpiece with carrier electrodes on the workpiece carrier, to ground the workpiece.

A multi-beam electronics scanning system using swathing. The system includes an electron emitter source configured to emit an illumination beam. The illumination beam is split into multiple electron beams by a beam splitter lens array. The system also includes an electronic deflection system configured to deflect each of the electron beams in a plurality of directions, including a first direction, along two different axes. Last, a swathing stage is used to move a sample with a constant velocity in a second direction that is parallel to the first direction.

The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam deposition or etch process to correct asymmetry of depositing or etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of the respective deposition or etch across the full wafer.

An apparatus and method of processing a workpiece is disclosed, where a coating is applied to a workpiece and the workpiece is subsequently subjected to an etching process. These processes are performed by one semiconductor processing apparatus while the workpiece is scanned relative to the apparatus. A precursor is applied to the workpiece by the apparatus. The apparatus then uses plasma, heat or ultraviolet radiation to activate the precursor to form a coating. After the coating is applied, the apparatus is configured to perform the etching process. In certain embodiments, the etching process is a directional etching process.

In one embodiment, a multi-beam blanking device includes a semiconductor substrate, an insulating film that is disposed on the semiconductor substrate, an antistatic film that is disposed on the insulating film, a plurality of cells each of which is related to a through-hole that penetrate the semiconductor substrate and the insulating film and each of which includes a blanking electrode and a ground electrode that are disposed on the insulating film, and a ground wiring line that is disposed in the insulating film. The antistatic film and the ground wiring line are connected to each other at a joint that extends through the insulating film on the ground wiring line.

A device (1) for coating a substrate (4) with nanometric sized particles, wherein the device comprises: a plurality of aerodynamic lenses able to product a jet (3) of nanometric sized particles, each of the aerodynamic lenses having a longitudinal axis, the aerodynamic lenses being arranged so that the various longitudinal axes are parallel and oriented in a first direction (X) defining the direction of propagation of the jet and in the form of at least two columns (9, 10) offset from each other in a second direction (Y) orthogonal to the first direction, where the first and the second column each comprise at least one of the aerodynamic lenses, the at least one of the aerodynamic lenses of the first column also being offset relative to the at least one of the aerodynamic lenses of the second column in a third direction (Z) that is both orthogonal to the first direction and to the second direction.

The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

The ion implantation method includes (a) moving a wafer adjusted to have a first implantation angle with respect to an ion beam from a beam irradiation range toward a beam non-irradiation range; (b) starting a change of the wafer from the first implantation angle to a second implantation angle while the wafer is moved within the beam non-irradiation range after the wafer having the first implantation angle is moved from the beam irradiation range; (c-1) reversing a movement direction of the wafer at an end of the beam non-irradiation range and moving the wafer toward the beam irradiation range; and (c-2) completing the change of the wafer from the first implantation angle to the second implantation angle while the wafer is moved within the beam non-irradiation range before the wafer is returned to the beam irradiation range.

A method of imaging a sample with a charged particle beam device, comprising: determining a first focusing strength of an objective lens of the charged particle beam device, the first focusing strength being adapted to focus a charged particle beam on a first surface region of the sample; determining a first focal subrange of a plurality of focal subranges such that the first focusing strength is within the first focal subrange, wherein the plurality of focal subranges is associated with a set of values of a calibration parameter; determining a first value of the calibration parameter, the first value being associated with the first focal subrange; and imaging the first surface region with the first value.