A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

A stage apparatus for an e-beam inspection apparatus comprising: an object table (3) comprising an supporting surface, the object table configured to support a substrate (190) on the supporting surface; a positioning device (180) configured to a position the object table; a position measurement system (5) comprising a position sensor (8-10) configured to measure a height position of the object table parallel to a first axis, the first axis being substantially perpendicular to the supporting surface, the position sensor comprising an interferometer measurement system having an interferometer sensor (9, 10, 22), wherein a measurement beam (11, 15) of the interferometer sensor is configured to irradiate a reflective surface (13, 17) of the object table in a measurement direction, the measurement direction having a first component parallel to the first axis and a second component parallel to a second axis, the second axis being substantially perpendicular to the first axis.

An electrostatic chuck includes a chuck body which supports a substrate, at least one pin hole penetrating the chuck body in a vertical direction, a lift pin disposed in one of the at least one pin hole, wherein the lift pin moves along the one of the at least one pin hole, and an expansion member which is provided at an inner circumference of the one of the at least one pin hole, the expansion member having an inner circumferential surface that, in response to a first power, selectively holds or releases an outer circumferential surface of the lift pin.

In one embodiment, an electron beam inspection apparatus includes an optical system irradiating a substrate with primary electron beams, a beam separator separating, from the primary electron beams, secondary electron beams emitted as a result of irradiating the substrate with the primary electron beams, a detector detecting the secondary electron beams separated, a movable stage on which the substrate is placed, a support base supporting the substrate on the stage, and an applying unit applying a first voltage to the substrate. The support base includes a plurality of support pins that support the substrate from below. The support pins each include a columnar insulator and a metal film disposed in the insulator. A second voltage is applied to the metal film.

An electron beam apparatus is provided. The apparatus comprises an e-beam source configured to generate an electron beam, a first part configured to support a substrate, the first part comprising an object table for supporting the substrate, the first part further comprising a short stroke actuator system for actuating the object table relative to the e-beam source, the short stroke actuator system comprising a short stroke forcer. The apparatus further comprises a second part configured to movably support the first part and a long stroke actuator system configured to actuate movement of the first part with respect to the second part, the long stroke actuator system comprising a long stroke forcer, wherein the short stroke forcer and/or the long stroke forcer is configured to be switched off while the electron beam is projected onto the substrate.

A substrate treating apparatus includes a housing, treating space and support unit to support a substrate, dielectric plate, gas supply unit, and plasma source to generate a plasma and including a top edge electrode above the edge region supported by the support unit and bottom edge electrode below the edge region supported by the support unit, which includes a support plate having an inner space and vacuum hole that communicates with the inner space and sucking the substrate on the top surface. A lift pin assembly can transfer the substrate between an outside transfer unit and the support plate. A decompression unit can apply negative pressure to the inner space. The lift pin assembly includes a base plate and through hole penetrating the base plate to provide negative pressure in a region under the base plate to a region over the base plate. Lift pins protrude from the base plate and support a bottom substrate surface. A driver can lift/lower the base plate within the inner space.

A substrate processing system is installable in a small installation area. The substrate processing system includes one or more process modules and a vacuum transfer module. At least one of the one or more process modules and the vacuum transfer module at least partially overlap with each other as viewed from above.

The present disclosure discloses a carrier device, a semiconductor apparatus, and a residual charge detection method. The disclosed carrier device is configured to carry a wafer in a semiconductor apparatus. The carrier device includes an electrostatic carrier plate and at least three positioning members, wherein the electrostatic carrier plate includes a carrying surface configured to carry the wafer; the at least three positioning members are arranged around the carrying surface at intervals along a circumferential direction of the carrying surface, each positioning member is provided with a position limiting segment, and the at least three position limiting segments form a position limiting space above the carrying surface. An opening size of the position limiting space increases along a direction away from the carrying surface. The above-mentioned solution can solve the problem that a position deviation of the wafer is relatively large due to incomplete charge removal of the wafer.

The inventive concept provides an apparatus for treating a substrate. A substrate treatment apparatus according to an embodiment includes a housing having a treatment space in which the substrate is treated, a support unit that supports the substrate in the treatment space, and a gas supply unit that supplies a gas to the treatment space, wherein a heat transfer flow path that supplies a heat transfer medium to the substrate supported by the support unit, a pin hole defining an elevation path of a lift pin that elevates the substrate supported by the support unit, and a connection portion allowing the heat transfer flow path and the pin hole to be in communication with each other are formed inside the support unit, and the connection portion includes a porous structure.

A substrate support unit includes a substrate support member that supports a substrate, the substrate support member being provided with one or more pin holes vertically penetrating the substrate support member, and a lift pin assembly provided to be lifted along a corresponding pin hole. The lift pin assembly includes lift pins, each lift pin having an upper end contacting the substrate and supporting the substrate, and a pin drive unit that is coupled to the lift pins and lifts the lift pins. The pin drive unit includes piezoelectric motors below the lift pins, respectively.