A mounting table structure includes a mounting table on which a substrate is mounted, a refrigerating mechanism configured to cool the substrate, an elevating drive part configured to move the mounting table or the refrigerating mechanism up and down, and at least one contact provided at a position between the refrigerating mechanism and the mounting table which face each other. The refrigerating mechanism and the mounting table are allowed to be brought into contact with each other via the contact by moving the mounting table or the refrigerating mechanism up and down by the elevating drive part.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

A sample holder for electron microscopy of air-sensitive samples for use in electron microscopy incorporates a housing and a closure assembly. The closure assembly comprises a lid comprising at least one closure arm receiving portions recessed within a flat, planar upper surface thereof. The housing comprises one or more closure arm(s) corresponding to one or more closure arm receiving portion(s). In a fully closed position, the closure arm(s) share contact with the closure arm receiving portion(s). The lid is flexibly coupled to a motor cover plate which can be actuated by a motor assembly configured to open and close the lid. The sample holder also includes an elevator assembly with a vertically adjustable sample stage which sits below the lid. The sample stage is vertically adjusted by actuation of a bellows assembly which sits beneath the sample stage.

A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has multiple grounding electrodes, grounding pads located at its edges, and a polymer thin film including multiple areas each covering only one grounding electrode. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a shadow mask below the poling source, and a Z-elevator to raise the workpiece carrier toward the shadow mask and poling source. When the workpiece in the workpiece carrier is raised to contact the underside of the shadow mask, multiple openings of the shadow mask expose only the corresponding multiple thin film areas of the workpiece to the plasma; meanwhile, conductive grounding terminals on the underside of the shadow mask electrically connect the grounding pads of the workpiece with carrier electrodes on the workpiece carrier, to ground the workpiece.

The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.

An apparatus for plasma processing comprises: a support configured to support a substrate and an edge ring disposed around the substrate; a lifting mechanism configured to vertically move the edge ring; and a controller. The support includes a convex portion which protrudes upward and on which the substrate is mounted, a ring mounting portion on which the edge ring is mounted in a state in which the convex portion is inserted into the hole of the edge ring, and a temperature adjustment mechanism configured to adjust a temperature of the convex portion. The lifting mechanism and the temperature adjustment mechanism are configured to move the edge ring to a predetermined position at which the convex portion is in a state of being inserted into the hole of the edge ring and heat the convex portion of the support to expand it in a diametric direction thereof.

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a deposition ring including a first portion having an first inner ledge and a second portion having a second inner ledge, wherein in a first position, the first portion is spaced from the second portion, and wherein in a second position, the second portion is configured to engage the first portion so that the first inner ledge is aligned with the second inner ledge along a common plane to form a clamping surface.

Disclosed are a plasma processing apparatus and an adjusting method of the same. The apparatus includes: a vacuum chamber enclosed by a chamber body and a chamber lid; a movable upper electrode assembly disposed in the vacuum chamber; a bottom electrode assembly, arranged opposite the movable upper electrode assembly, the bottom electrode assembling being detachably connected with the bottom of the chamber body; a plurality of self-alignment devices each including a self-alignment upper structure and a self-alignment lower structure, the self-alignment upper structure and the self-alignment lower structure being connected to the movable upper electrode assembly and the bottom electrode assembly, respectively, wherein when the self-alignment upper structures and the self-alignment bottom structures are aligned to be jointed together, the center of the movable upper electrode assembly is aligned with that of the bottom electrode assembly. The disclosure offers the following advantages: through cooperation between the self-alignment upper structures and the self-alignment lower structures, the plasma processing apparatus realizes concentricity adjustment between the movable upper electrode assembly and the lower electrode assembly, rendering the self-alignment devices simple in structure and convenient to operate and alleviating testing pressures on operators.