Embodiments disclosed herein include an RF return assembly. In an embodiment, the RF return assembly comprises a first plate with a flange, where a first hole and a second hole pass through the flange. The RF return assembly may further comprise a second plate over the first plate, and a first body positioned above the flange. In an embodiment, the RF return assembly further comprises a second body positioned below the flange, where the first body is affixed to the second body by a pillar that passes through the first hole. In an embodiment, the RF return assembly further comprises a spring attached between the second plate and the second body, where the spring passes through the second hole, and a conductive band to electrically couple the first body to the flange.

A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

A method for adjusting a contact position of lift pins in a substrate placement mechanism is provided. The substrate placement mechanism includes a substrate placement table and a substrate lifting mechanism having lift pins and a driving mechanism, wherein the contact position of the lift pins is a height position where tip ends of the lift pins get in contact with the substrate. The method comprises creating torque waveforms, for a plurality of voltages, indicating temporal changes of a torque of the motor while moving the tip ends of the lift; obtaining from the plurality of torque waveforms a contact point when the lift pins get in contact with the substrate and calculating the contact position from the contact point and a speed of the motor; determining whether the contact position is within an appropriate range; and automatically adjusting the contact position when the contact position is not within the appropriate range.

The inventive concept provides a substrate treating apparatus. The substrate includes a process chamber in which a substrate is treated, and a transfer robot that transfers the substrate and a focusing ring provided in a treatment space of the process chamber to the treatment space and having a hand, wherein the process chamber includes a treatment container that provides the treatment space, a chuck having a support surface supporting the substrate in the treatment space, and a lift pin module that lifts a lower surface of the focusing ring in a state in which the substrate is supported by the focusing ring, and the chuck is provided as a blocking plate in which a lift pin hole is not formed.

A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

Exemplary substrate processing systems may include a body that defines processing and transfer regions. The systems may include a liner atop the body. The systems may include a faceplate atop the liner. The systems may include a support within the body. The support may be vertically translatable between process and transfer positions. The support may include a plate having a heater. The support may include a shaft coupled with the plate. The support may include a bowl about the shaft below the plate. The bowl may be in alignment with the liner. The support may include springs that push the bowl upward as the support translates to the process position. The support may include straps that couple the plate and bowl. The support may include a hard stop. The bowl may contact the liner in the process position and may be spaced apart from the liner in the transfer position.

According to the present disclosure, there is provided a technique capable of efficiently heating a substrate with a light emitted from a lamp heater. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel at least a part of which is made of opaque quartz; a substrate mounting table provided in the process vessel or in a processing space communicating with an inside of the process vessel; a lamp heater provided at a position facing a substrate placing surface of the substrate mounting table; and a plasma generator provided at an outer periphery of the process vessel and configured to excite a gas in the process vessel by a plasma.

A plasma processing apparatus includes: a substrate holder configured to place a plurality of substrates in a multi-stage structure in a height direction on the substrate holder; and a processing container in which the substrate holder is accommodated and including a heating part that heats the plurality of substrates, wherein the substrate holder is provided with a plurality of stages made of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.

The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing. The differential screw assembly is configured to provide force to align the plasma source assembly vertically matching planarity of a susceptor. More particularly, the differential screw assembly increases a distance between the top cover and the upper housing to align the gap with the susceptor. The disclosure also provides a better thermal management by cooling fins. A temperature capacity of the plasma source assemblies is extended by using titanium electrode. The disclosure provides a cladding material covering a portion of a first surface of RF hot electrode, a second surface of RF hot electrode, a bottom surface of RF hot electrode, a portion of a surface of the showerhead and a portion of lower housing surface.

Disclosed is a stage apparatus comprising: an object support configured to support an object; a positioning device configured to position the object support; a first connection arrangement configured to connect the object support to the positioning device, the first connection arrangement comprising at least one damped connection; and a second connection arrangement configured to connect the object support to the positioning device, the second connection arrangement comprising at least one substantially rigid connection.