A charged particle beam apparatus includes: an optical system that irradiates a sample mounted on a sample stage with a charged particle beam; at least one detector that detects a signal generated from the sample; an imaging device that acquires an observation image; a mechanism for changing observation positions in the sample which has at least one of a stage that moves the sample stage and a deflector that changes the charged particle beam's irradiation position; a display unit that displays an operation screen provided with an observation image displaying portion that displays the observation image and an observation position displaying portion that displays an observation position of the observation image; and a controller that controls display processing of the operation screen. The controller superimposes and displays on the observation position displaying portion a plurality of observation position images at different magnifications, based on the observation images' magnifications and coordinates.

A control device that controls a spectrometer includes: a specimen image display control section that performs a control process that displays a specimen image acquired by the spectrometer on a display section; and an spectrometer control section that performs a control process that causes the spectrometer to start analysis based on designation of an analysis position within the specimen image that has been performed by a pointing device, and performs a control process that causes the spectrometer to stop the analysis based on cancellation of the designation of the analysis position that has been performed by the pointing device.

A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.

An apparatus for performing charged particle spectroscopy, comprising: A source, for producing a pulsed beam of charged particles that propagate along a beam path; A specimen holder, for holding a specimen at an irradiation position in said beam path; A detector arrangement, for performing energy-differentiated detection of charged particles that traverse said specimen,
wherein, between said source and said detector arrangement, said beam path successively traverses: An energizing cavity, for applying a time-dependent accelerating field to said beam; A primary drift space; Said irradiation position; A temporal focusing cavity, for converting an energy differential in said beam into a time-of-flight differential; A secondary drift space.

An apparatus for performing charged particle spectroscopy, comprising: A source, for producing a pulsed beam of charged particles that propagate along a beam path; A specimen holder, for holding a specimen at an irradiation position in said beam path; A detector arrangement, for performing energy-differentiated detection of charged particles that traverse said specimen,
wherein, between said source and said detector arrangement, said beam path successively traverses: An energizing cavity, for applying a time-dependent accelerating field to said beam; A primary drift space; Said irradiation position; A temporal focusing cavity, for converting an energy differential in said beam into a time-of-flight differential; A secondary drift space.

An electron microscope including a vacuum chamber for containing a specimen to be analyzed, an optics column, including an electron source and a final probe forming lens, for focusing electrons emitted from the electron source, a specimen stage positioned in the vacuum chamber under the probe forming lens for holding the specimen, and multiple x-ray detectors positioned within the vacuum chamber, at different takeoff angles with respect to the sample's x-ray emission position in the chamber. Takeoff angles are provided to improve the counting efficiency of the various sensors. Multiple detectors of different types may be supported within the vacuum chamber on a mechanical support system, which may be adjustable. A method includes operating the sensors to optimize the time required for accurate x-ray counting by gathering data at the multiple takeoff angles.

A radiation detector includes a Peltier device (electronic cooling unit) for cooling a radiation detecting element, and a heat releasing part of the Peltier device is in thermal contact with a cold finger (thermally conductive part). The cold finger is made of a material with higher thermal conductivity than that of the base, and penetrates the base. The heat from the radiation detecting element is conducted from the heat releasing part of the Peltier device to the cold finger, and is dissipated to an area outside of the radiation detector through the cold finger. As such, heat is efficiently dissipated from the radiation detecting element.

The invention relates to a photon detector (10), in particular an x-ray detector, in the form of a measurement finger, which extends along a detector axis (23) and has a detector head (11) at a first end of the measurement finger, wherein the detector head (11) comprises a plurality of at least two detector modules (22), each comprising a sensor chip (12) sensitive to photon radiation (14), in particular x-radiation, said sensor chip having an exposed end face (13) and a face facing away from the end face (13), wherein the detector modules (22) are arranged around the detector axis (23) in a plane (24) extending orthogonally to the detector axis (23).

An electron microscope including a vacuum chamber for containing a specimen to be analyzed, an optics column, including an electron source and a final probe forming lens, for focusing electrons emitted from the electron source, a specimen stage positioned in the vacuum chamber under the probe forming lens for holding the specimen, and multiple x-ray detectors positioned within the vacuum chamber, at different takeoff angles with respect to the sample's x-ray emission position in the chamber. Takeoff angles are provided to improve the counting efficiency of the various sensors. Multiple detectors of different types may be supported within the vacuum chamber on a mechanical support system, which may be adjustable. A method includes operating the sensors to optimize the time required for accurate x-ray counting by gathering data at the multiple takeoff angles.

A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.