An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.

An ion implanter includes an angle measurement apparatus that measures a first angle of an ion beam in a first direction and a second angle of the ion beam in a second direction, the first direction and the second direction being mutually orthogonal to a traveling direction of the ion beam, an angle corrector that is located in a beamline of the ion beam and corrects an angle of the ion beam in the first direction based on the first angle, a wafer holder that holds a wafer in a process chamber, a tilt device that is connected to the wafer holder and that rotates the wafer around a rotation axis parallel to the first direction, and a controller that controls the tilt device based on the second angle, crystal axis information of the wafer, and implantation recipe information.

Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

An ion implantation apparatus includes an implantation part, a measuring part, and a controller. The ion implantation part implants ions into an implantation region located at a bottom of a concave portion provided on a semiconductor substrate. The measuring part measures an implantation amount of ions corresponding to an aspect ratio of the concave portion based on ions implanted from the implantation part thereinto, at a first position at which the semiconductor substrate is arranged when the ions are implanted into the implantation region or a second position close to the first position. The controller controls the implantation part to stop implantation of the ions into the measuring part when an accumulated amount of the implantation amount has reached a predetermined amount according to a target accumulation amount of the implantation region.

A method for improving the productivity of a hybrid scan implanter by determining an optimum scan width is provided. A method of tuning a scanned ion beam is provided, where a desired beam current is determined to implant a workpiece with desired properties. The scanned beam is tuned utilizing a setup Faraday cup. A scan width is adjusted to obtain an optimal scan width using setup Faraday time signals. Optics are tuned for a desired flux value corresponding to a desired dosage. Uniformity of a flux distribution is controlled when the desired flux value is obtained. An angular distribution of the ion beam is further measured.

Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

A processing system that includes an ion source to direct an ion beam at a workpiece, and an angle measurement system, is disclosed. The angle measurement system includes a current measurement device, such as one or more Faraday sensors, that may be moved in at least two orthogonal directions. The current measurement device scans in a first direction, seeking the largest current measurement. The current measurement device then moves to a second position in the second direction and repeats the scanning procedure. Based on data collected at two different locations in the second direction, the angle of incidence of the incoming ion beam may be determined.

Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

An ion implantation apparatus includes an implantation part, a measuring part, and a controller. The ion implantation part implants ions into an implantation region located at a bottom of a concave portion provided on a semiconductor substrate. The measuring part measures an implantation amount of ions corresponding to an aspect ratio of the concave portion based on ions implanted from the implantation part thereinto, at a first position at which the semiconductor substrate is arranged when the ions are implanted into the implantation region or a second position close to the first position. The controller controls the implantation part to stop implantation of the ions into the measuring part when an accumulated amount of the implantation amount has reached a predetermined amount according to a target accumulation amount of the implantation region.

An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.