The invention provides a bias voltage to the component (such as the Faraday cup) for reducing the generation of particles, such as the implanted ions and/or the combination of the implanted ions and the material of the component, and preventing particles peeling away the component. The strength of the biased voltage should not significantly affect the implantation of ions into the wafer and should significantly prevent the emission of radiation and/or electrons away the biased component. How to provide and adjust the biased voltage is not limited, both the extra voltage source and the amended Pre-Amplifier are acceptable. Moreover, due to the electric field generated by the Faraday cup is modified by the biased voltage, the ion beam divergence close to the Faraday cup may be reduced such that the potential difference between the ion beam measured by the profiler and received by the Faraday cup may be minimized.

A charged-particle beam (CPB) is aligned to a primary axis of a CPB microscope by determining a first beam deflection drive to a beam deflector for directing the CPB passing a reference location displaced from the primary axis. The beam deflector is provided with a second beam deflection drive during the working mode of the CPB microscope to propagate the beam along the primary axis. The second beam deflection drive is determined based on the first beam deflection drive.

An ion implanter includes a beam scanner that performs a scanning with an ion beam in a scanning direction perpendicular to a traveling direction of the ion beam, and a beam profiler that is disposed downstream of the beam scanner and measures a beam current distribution of the ion beam when the scanning by the beam scanner is performed. The beam profiler includes an aperture array that includes a first aperture and a second aperture, a cup electrode array that is disposed to be fixed with respect to the aperture array, the cup electrode array including a first cup electrode and a second cup electrode, and a plurality of magnets.

A system for determining Schottky thermal field emission (TFE) usable current and brightness of a Schottky TFE source is provided, the system including: one or more processors, configured to: acquire and store in a memory a Schottky TFE emission image in a digital format; and determine Schottky TFE usable beam current and brightness for the based on experimentally developed algorithms that utilize usable current criteria and usable emission current density, the usable current criteria being generated based on properties of a central beam component and an outer beam component of Schottky TFE beam current.

There is provided a control method for an electron microscope including a thermionic-emission gun of self-bias type using a fixed bias resistor, an accelerating voltage power supply supplying an accelerating voltage to the thermionic-emission gun, and an optical system for irradiating a specimen with an electron beam. The control method includes: obtaining a value of a load current which is a current passing through an accelerating voltage power supply; determining a filament height of the thermionic-emission gun based on the value of the load current; and setting a condition of the optical system based on the filament height.

A charged-particle beam (CPB) is aligned to a primary axis of a CPB microscope by determining a first beam deflection drive to a beam deflector for directing the CPB passing a reference location displaced from the primary axis. The beam deflector is provided with a second beam deflection drive during the working mode of the CPB microscope to propagate the beam along the primary axis. The second beam deflection drive is determined based on the first beam deflection drive.

A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.

Provided is a multi charged particle beam writing apparatus, including: an emission unit emitting a charged particle beam; a first aperture substrate having a plurality of first openings, the first aperture being irradiated with the charged particle beam, and the first aperture allowing a portion of the charged particle beam to pass through the plurality of first openings to form multiple beams; a second aperture substrate having a plurality of second openings through which each beam of the multiple beams passes and the second aperture substrate being capable of independently deflecting the each beam of the multiple beams; and a shielding plate provided so as to be insertable to a space between the first aperture substrate and the second aperture substrate and the shielding plate being capable of simultaneously shielding all the multiple beams.

Systems and methods of measuring beam current in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam, and an aperture array. The aperture array may comprise a plurality of apertures configured to form a plurality of beamlets from the primary charged-particle beam, and a detector including circuitry to detect a current of at least a portion of the primary charged-particle beam irradiating the aperture array. The method of measuring beam current may include irradiating the primary charged-particle beam on the aperture array and detecting an electric current of at least a portion of the primary charged-particle beam.

An ion implantation apparatus includes a first angle measuring instrument configured to measure angle information on an ion beam in a first direction, a second angle measuring instrument configured to measure angle information on the ion beam in a second direction, a relative movement mechanism configured to change relative positions of the first angle measuring instrument and the second angle measuring instrument with respect to the ion beam in a predetermined relative movement direction, and a control device configured to calculate angle information on the ion beam in a third direction perpendicular to both a beam traveling direction and the relative movement direction based on the angle information on the ion beam in the first direction measured by the first angle measuring instrument and the angle information on the ion beam in the second direction measured by the second angle measuring instrument.