A scanning electron microscope includes a first detector for detecting electrons, a second detector for detecting X-rays, and an image processor section for causing first markers indicative of imaging positions and second markers indicative of analysis positions to be displayed on a display device such that the first and second markers are placed on a whole image of a sample. The image processor section alters the magnification of the whole image based on instructions for altering the magnification of the whole image displayed on the display device. The image processor section displays new first markers of the same size as the first markers placed on the unaltered magnification whole image such that the new first markers are placed on the altered magnification whole image. The image processor section causes new second markers of the same size as the second markers placed on the unaltered magnification whole image to be placed on the altered magnification whole image.

An X-ray analyzer includes: an X-ray detector that detects an X-ray emitted from a specimen and outputs a signal having a step that has a height corresponding to energy of the X-ray; a pulse generation circuit that converts the signal output from the X-ray detector into a first pulse signal; a pulse-width setting circuit that sets a pulse width; a pulse-width conversion circuit that converts a pulse width of the first pulse signal into the pulse width set by the pulse-width setting circuit to form a second pulse signal; a pulse-height discriminator that discriminates the second pulse signal according to a pulse height of the second pulse signal; a counting circuit that calculates a counting rate of the discriminated second pulse signal; and a counting-loss correction processing unit that corrects the counting rate. The counting-loss correction processing unit corrects the counting rate based on the pulse width.

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

A scanning electron microscope includes a first detector for detecting electrons, a second detector for detecting X-rays, and an image processor section for causing first markers indicative of imaging positions and second markers indicative of analysis positions to be displayed on a display device such that the first and second markers are placed on a whole image of a sample. The image processor section alters the magnification of the whole image based on instructions for altering the magnification of the whole image displayed on the display device. The image processor section displays new first markers of the same size as the first markers placed on the unaltered magnification whole image such that the new first markers are placed on the altered magnification whole image. The image processor section causes new second markers of the same size as the second markers placed on the unaltered magnification whole image to be placed on the altered magnification whole image.

An X-ray analyzer includes: an X-ray detector that detects an X-ray emitted from a specimen and outputs a signal having a step that has a height corresponding to energy of the X-ray; a pulse generation circuit that converts the signal output from the X-ray detector into a first pulse signal; a pulse-width setting circuit that sets a pulse width; a pulse-width conversion circuit that converts a pulse width of the first pulse signal into the pulse width set by the pulse-width setting circuit to form a second pulse signal; a pulse-height discriminator that discriminates the second pulse signal according to a pulse height of the second pulse signal; a counting circuit that calculates a counting rate of the discriminated second pulse signal; and a counting-loss correction processing unit that corrects the counting rate. The counting-loss correction processing unit corrects the counting rate based on the pulse width.

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

An EDS 5 acquires first spectrum data by detecting an X-ray generated from a sample. A WDS 6 acquires second spectrum data by detecting the X-ray generated from the sample. A phase distribution map generation processing unit 11 generates a phase distribution map of a substance of the sample in a measurement region, on the basis of the first spectrum data acquired with respect to each pixel in the measurement region on a sample surface. A composition information acquisition processing unit 13 acquires element composition information of each phase, on the basis of the second spectrum data acquired with respect to a position on the sample corresponding to a representative pixel in the measurement region corresponding to each of the phases of the phase distribution map.

The present invention relates to a charged particle system comprising: a charged particle source; a first multi aperture plate; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture of the first multi aperture plate is, when seen in a direction of incidence of the charged particle beamlet traversing the aperture of the first multi aperture plate, displaced relative to a center of the aperture of the second multi aperture plate. The invention further pertains to a particle-optical component configured to change a divergence of a set of charged particle beamlets and a charged particle inspection method comprising inspection of an object using different numbers of charged particle beamlets.

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

An EDS 5 acquires first spectrum data by detecting an X-ray generated from a sample. A WDS 6 acquires second spectrum data by detecting the X-ray generated from the sample. A phase distribution map generation processing unit 11 generates a phase distribution map of a substance of the sample in a measurement region, on the basis of the first spectrum data acquired with respect to each pixel in the measurement region on a sample surface. A composition information acquisition processing unit 13 acquires element composition information of each phase, on the basis of the second spectrum data acquired with respect to a position on the sample corresponding to a representative pixel in the measurement region corresponding to each of the phases of the phase distribution map.