Disclosed herein are example embodiments for performing microscopy using microscope systems that combine both scanning-electron-microscope-cathodoluminescence (SEM-CL) microscopy and focused-ion-beam ion-induced optical emission (FIB-IOE) microscopy. Certain embodiments comprise operating a microscopy system in a first microscopy mode in which an electron beam interacts with a sample at a sample location and causes first-mode photons and electrons to be emitted, the first-mode photons including photons generated through a cathodoluminescence process; and operating a microscopy system in a second microscopy mode in which an ion beam interacts with a sample at the sample location and causes second-mode photons to be emitted, the second-mode photons including photons generated through an ion-induced luminescence process and photons generated through an atomic de-excitation process.

The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.

The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.

A scanning electron microscope includes an FIB column, an SEM column, and a control unit which controls the FIB column and the SEM column. The control unit performs: processing to control the FIB column so that a cross-section of a specimen S is repeatedly exposed at predetermined intervals; processing to perform a first measurement to acquire a first image by irradiating a cross-section of the specimen S with an electron beam each time when a cross-section of the specimen S is exposed; and processing to perform a second measurement to acquire a second image by irradiating a cross-section of the specimen S with an electron beam each time when a cross-section of the specimen S is exposed n times (n is an integer of 2 or more).

The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample; scanning said charged particle beam over said sample at a plurality of sample locations; and detecting, using a first detector, emissions of a first type from the sample in response to the beam scanned over the plurality of sample locations. Spectral information of detected emissions of the first type is used to assign a plurality of mutually different phases to said sample at said plurality of sample locations. Information relating to at least one previously assigned phase and its respective sample location is used for establishing an estimated phase for at least one other of the plurality of sample locations. Said estimated phase is assigned to said other sample location. A control unit is used to provide a data representation of said sample containing at least information on said plurality of sample locations and said phases.

The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample; scanning said charged particle beam over said sample at a plurality of sample positions; and acquiring an EELS spectrum for each of said plurality of sample positions. According to the method, it comprises the further steps of scanning, once more, said charged particle beam over said sample at said plurality of sample positions; acquiring a further EELS spectrum for each of said plurality of sample positions; and combining, for each of said plurality of sample positions, said EELS spectrum with said further EELS spectrum. With this, it is possible to acquire rapid information on the sample being investigated, allowing for faster processing of samples.

There is provided a tilting parameters calculating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample mounted on a sample stage, the tilting parameters calculating device being configured to calculate tilting parameters, the tilting parameters being input parameters to control a tilting direction and a tilting value of the sample and/or the charged particle beam, the input parameters being necessary to change an incident direction of the charged particle beam with respect to the sample, the tilting parameters calculating device including a tilting parameters calculating unit for calculating the tilting parameters based on information that indicates the incident direction of the charged particle beam with respect to a crystal lying at a selected position on the surface in a state where the incident direction of the charged particle beam with respect to the sample is in a predetermined incident direction, the information being designated on a crystal orientation figure, which is a diagram illustrating the incident direction of the charged particle beam with respect to a crystal coordinate system of the crystal.

A low voltage scanning electron microscope is disclosed, which includes: an electron source configured to generate an electron beam; an electron beam accelerator configured to accelerate the electron beam; a compound objective lens configured to converge the electron beams accelerated by the electron beam accelerator; a deflection device arranged between the inner wall of the magnetic lens and the optical axis of the electron beam and configured to deflect the electron beam; a detection device comprising a first sub-detection device for receiving secondary and backscattered electrons from the specimen, a second sub-detection device for receiving backscattered electrons, and a control device for changing the trajectories of the secondary electrons and the backscattered electrons; an electrostatic lens comprising the second sub-detection device, a specimen stage, and a control electrode for reducing the moving speed of the electron beam and changing the moving directions of the secondary and the backscattered electrons.

A charged particle beam apparatus acquires a scanned image by scanning a sample with a charged particle beam and detecting charged particles emitted from the sample. The charged particle beam apparatus includes: a plurality of detection units that detect charged particles emitted from the sample; and an image processing unit that generates the scanned image based on a plurality of detection signals outputted from the plurality of the detection units. The image processing unit performs a process of calculating a tilt direction of a sample surface and a tilt angle of the sample surface based on the plurality of the detection signals for an irradiation position of the charged particle beam; and a process of determining a color of a pixel of the scanned image according to the calculated tilt direction and the calculated tilt angle.

The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.