Patent classifications
H01J2237/2804
SYSTEM AND METHOD FOR BARE WAFER INSPECTION
A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.
MEMBRANE ASSEMBLY, EXAMINATION CONTAINER AND ELECTRON MICROSCOPE
An examination container includes a main body, a membrane assembly and a cover. The main body has an accommodating trough for holding sample. The membrane assembly covers an opening end of the accommodating trough. The membrane assembly includes a support body and a membrane. The support body has a first surface and a second surface, wherein the support body is flat and has a first through-hole penetrating through the first surface and the second surface. The membrane is arranged on the second surface side of the support body and has a second through-hole. The second through-hole is opposite to the first through-hole and allows a charged particle beam to pass the second through-hole. The cover is detachably connected to the main body to secure the membrane assembly. The membrane assembly is easy to replace and uses less consumables. An electron microscope using the abovementioned examination container is also disclosed.
Sample manipulation for nondestructive sample imaging
A system and method for imaging a sample having a complex structure (such as an integrated circuit). The sample is placed on a motion system that moves the sample with respect to an electron beam generator that is used in imaging the sample. The motion system affords thirteen degrees-of-freedom for movement of the sample, by providing a rotation stage, a fine 6-axis piezoelectric-driven stage, and a coarse 6-axis hexapod stage. Various detectors gather information to image the sample. Interferometric and/or capacitive sensors are used to measure the position of the sample and motion system.
IMAGING DEVICE, IMAGING METHOD, AND IMAGING SYSTEM
The present invention discloses an imaging device, an imaging method, and an imaging system, belonging to the field of sample image data acquisition and imaging technology. The imaging device includes: a charged particle source, a convergence system, a scanning control system, a detection module, and a spectral analysis module disposed below the detection module, where the detection module includes a plurality of pixelated detector units; and the detection module is provided with a hole thereon. The diffraction pattern is obtained by using the detection module, and the spectral analysis module performs spectral analysis on a charged particle beam passing through the hole, so as to obtain the diffraction pattern and spectral signal simultaneously by one scanning. The imaging method of the present invention is based on a hollow ptychography method, which enables toper form imaging on the diffraction pattern obtained through the detection module, with good imaging effects.
Imaging system and imaging method
An imaging system having a scanning electron microscope capable of rapidly obtaining clear images of inspection targets at different heights is disclosed. The imaging system includes a computer having a memory storing design data including two-dimensional design information of each of layers of a three-dimensional multilayer structure constituting a surface of the specimen, the design data further including height information of each of the layers. The computer is configured to: read the two-dimensional design information and the height information from the memory; calculate a height of an image acquisition position on the specimen from the two-dimensional design information and the height information; and instruct the scanning electron microscope to focus the electron beam on the image acquisition position based on the calculated height of the image acquisition position.
HIGH FRAMERATE AND HIGH DYNAMIC RANGE ELECTRON MICROSCOPY
Methods and systems for acquiring transmission electron microscope video data on a rolling-shutter detector at an enhanced frame rate and without temporal distortions are described. Also described are methods to enhance the dynamic range of image and diffraction data acquired using a transmission electron microscope. The disclosed methods and systems may also be applicable to photon detection and imaging systems.
Charged Particle Beam Apparatus and Image Acquisition Method
A charged particle beam apparatus acquires a scanned image by scanning a sample with a charged particle beam and detecting charged particles emitted from the sample. The charged particle beam apparatus includes: a plurality of detection units that detect charged particles emitted from the sample; and an image processing unit that generates the scanned image based on a plurality of detection signals outputted from the plurality of the detection units. The image processing unit performs a process of calculating a tilt direction of a sample surface and a tilt angle of the sample surface based on the plurality of the detection signals for an irradiation position of the charged particle beam; and a process of determining a color of a pixel of the scanned image according to the calculated tilt direction and the calculated tilt angle.
Scanning electron microscope and image processing apparatus
In this invention, information of material composition, process conditions and candidates of crystal structure either known or imported from material database is used to determine sample stage tilt angle and working distance (WD). Under these determined tilt angle and WD, the intensity of the electrons emitted at different angles and with different energies is measured using a scanning electron microscope (SEM) system comprising: a use of materials database containing materials composition, formation process, crystal structure and its electron yield; a sample stage that is able to move, rotate and tilt; an processing section for calculating optimum working distance for an observation from material database and measurement condition; means for acquiring an image of crystal information of a desired area of a sample based on an image obtained from SEM observation.
Nondestructive sample imaging
A system and method for imaging a sample having a complex structure (such as an integrated circuit) implements two modes of operation utilizing a common electron beam generator that produces an electron beam within a chamber. In the first mode, the electron beam interacts directly with the sample, and backscattered electrons, secondary electrons, and backward propagating fluorescent X-rays are measured. In the second mode, the electron beam interrogates the sample via X-rays generated by the electron beam within a target that is positioned between the electron beam generator and the sample. Transmitted X-rays are measured by a detector within the vacuum chamber. The sample is placed on a movable platform to precisely position the sample with respect to the electron beam. Interferometric and/or capacitive sensors are used to measure the position of the sample and movable platform to provide high accuracy metadata for performing high resolution three-dimensional sample reconstruction.
NONDESTRUCTIVE SAMPLE IMAGING
A system and method for imaging a sample having a complex structure (such as an integrated circuit) implements two modes of operation utilizing a common electron beam generator that produces an electron beam within a chamber. In the first mode, the electron beam interacts directly with the sample, and backscattered electrons, secondary electrons, and backward propagating fluorescent X-rays are measured. In the second mode, the electron beam interrogates the sample via X-rays generated by the electron beam within a target that is positioned between the electron beam generator and the sample. Transmitted X-rays are measured by a detector within the vacuum chamber. The sample is placed on a movable platform to precisely position the sample with respect to the electron beam. Interferometric and/or capacitive sensors are used to measure the position of the sample and movable platform to provide high accuracy metadata for performing high resolution three-dimensional sample reconstruction.