H01J2237/2806

Scanning Electron Microscope

The purpose of the present invention is to be able to acquire high-resolution images in a scanning electron microscope using a combination of a cold cathode (CFE) electron source and a boosting process, even at low accelerating voltage enhancing the current stability of the CFE electron source. A configuration in which a CFE electron source (101), an anode electrode (103) at positive (+) potential, and an insulator (104) for isolating the anode electrode (103) from ground potential are accommodated within a single vacuum chamber (105), and an ion pump (106) and a non-evaporable getter (NEG) pump (107) are connected to the vacuum chamber (105), is employed.

Charged particle beam apparatus and processing method

A charged particle beam apparatus has a charged particle beam column configured to irradiate a charged particle beam, and a controller configured to control the charged particle beam column to irradiate the charged particle beam at a first pixel interval for a first region and to irradiate the charged particle beam at a second pixel interval different from the first pixel interval for a second region included in the first region. The first and second regions include plural first and second pixels each including first and second sub-pixels which are irradiated by the charged particle beam to generate secondary electrons. First and second sub-pixel images are formed based on the detected secondary electrons, and the first and second sub-pixel images are synthesized to form first and second images.

Charged particle beam device

An object of the invention is to provide a charged particle beam apparatus capable of performing high-precision measurement even on a pattern in which a width of edges is narrow and inherent peaks of the edges cannot be easily detected. In order to achieve the above object, there is proposed a charged particle beam apparatus including an opening portion forming member having a passage opening of a charged particle beam and a detector for detecting charged particles emitted from a sample or charged particles generated by causing the charged particles to collide with the opening portion forming member, the charged particle beam apparatus including: a deflector for deflecting the charged particles emitted from the sample; and a control device for controlling the deflector, the control device performing pattern measurement with the use of a first detected signal in which a signal of one edge is emphasized relatively more than a signal of another edge among a plurality of edges on the sample and a second detected signal in which the signal of the another edge is emphasized relatively more than the signal of the one edge among the plurality of edges.

INSPECTION APPARATUS AND INSPECTION METHOD
20170243715 · 2017-08-24 · ·

According to one embodiment, an inspection apparatus includes an irradiation device irradiating an inspection target substrate with multiple beams, a detector detecting each of a plurality of charged particle beams formed by charged particles emitted from the inspection target substrate as an electrical signal, and a comparison processing circuitry performing pattern inspection by comparing image data of a pattern formed on the inspection target substrate, the pattern being reconstructed in accordance with the detected electrical signals, and reference image data. The detector includes a plurality of detection elements that accumulate charges, and a detection circuit that reads out the accumulated charges. The plurality of detection elements are grouped into a plurality of groups. The detection circuit operates in a manner of, during a period in which the charged particle beams are applied to the detection elements included in one group, reading out the charges accumulated in the detection elements included in one or more other groups.

Charged-particle-beam device, specimen-image acquisition method, and program recording medium

A charged-particle-beam device is provided with a data processing unit that removes, from a detector signal, the effect that scattering of a primary charged-particle beam before the primary charged-particle beam reaches a specimen has on the spot shape of the primary charged-particle beam. For example, when using an electron microscope to observe a specimen in a non-vacuum atmosphere, the effect that scattering of a primary charged-particle beam due to a barrier film or a gas present in a non-vacuum space has on the spot shape of the primary charged-particle beam is removed from a signal acquired by a detector. This makes it easy to obtain high-quality images.

Method and system for adaptively scanning a sample during electron beam inspection

A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

CHARGED PARTICLE BEAM DEVICE AND METHOD OF MEASURING ELECTRICAL NOISE
20220037109 · 2022-02-03 ·

To provide a technique capable of measuring high-frequency electrical noise in a charged particle beam device. A charged particle beam device 100 includes an electron source 2 for generating an electron beam EB1, a stage 4 for mounting a sample 10, a detector 5 for detecting secondary electrons EB2 emitted from the sample 10, and a control unit 7 electrically connected to the electron source 2, the stage 4, and the detector 5 and can control the electron source 2, the stage 4, and the detector 5. Here, when the sample 10 is mounted on the stage 4, and a specific portion 11 of the sample 10 is continuously irradiated with the electron beam EB1 from the electron source 2, the control unit 7 can calculate a time-series change in irradiation position of the electron beam EB1 based on an amount of the secondary electrons EB2 emitted from the specific portion 11, and can calculate a feature quantity for a shake of the electron beam EB1 based on the time-series change in irradiation position. Further, the feature quantity includes a frequency spectrum.

Inspection apparatus

An inspection apparatus includes beam generation means, a primary optical system, a secondary optical system and an image processing system. Irradiation energy of the beam is set in an energy region where mirror electrons are emitted from the inspection object as the secondary charged particles due to the beam irradiation. The secondary optical system includes a camera for detecting the secondary charged particles, a numerical aperture whose position is adjustable along an optical axis direction and a lens that forms an image of the secondary charged particles that have passed through the numerical aperture on an image surface of the camera. In the image processing system, the image is formed under an aperture imaging condition where the position of the numerical aperture is located on an object surface to acquire an image.

Charged particle beam device

The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Charged Particle Beam Device
20170221672 · 2017-08-03 ·

An object of the present invention is to provide a charged particle beam device which can realize improved contrast of an elongated pattern in a specific direction, such as a groove-like pattern. In order to achieve the above-described object, the present invention proposes a charged particle beam device including a detector for detecting a charged particle obtained based on a charged particle beam discharged to a sample. The charged particle beam device includes a charged particle passage restricting member that has at least one of an arcuate groove and a groove having a longitudinal direction in a plurality of directions, and a deflector that deflects the charged particle discharged toward the groove from the sample. The charged particle discharged from the sample is deflected to a designated position of the groove.