H01J2237/281

Charged particle beam apparatus

There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.

Electron beam device and sample inspection method

An electron beam device suitable for observing the bottom of a deep groove or hole with a high degree of accuracy under a large current condition includes: an electron optical system having an irradiation optical system to irradiate a first aperture with an electron beam emitted from an electron source and a reduction projection optical system to project and form an aperture image of the first aperture on a sample, detectors to detect secondary electrons emitted by irradiating the sample with the electron beam through the electron optical system. An image processing unit generates a two-dimensional image from detection signals obtained by irradiating the sample while the electron beam scans the sample two-dimensionally by scanning deflectors of the electron optical system. Further, generates a reconstructed image by deconvoluting electron beam intensity distribution information of an ideal aperture image of the first aperture from the generated two-dimensional image information.

High voltage power supply device and charged particle beam device

Even in a case where a disturbance is applied from an adjacently disposed power supply circuit or the like, in order to realize a reduction in ripple, a high-voltage power supply device is configured to include a drive circuit, a transformer that boosts an output voltage of the drive circuit, a boost circuit that further boosts a voltage boosted by the transformer, a shield that covers the transformer and the boost circuit, a filter circuit that filters, smoothes, and outputs a high voltage output from the boost circuit, and an impedance loop circuit configured by connection of a plurality of impedance elements into a loop shape. A grounding point of the boost circuit, a grounding point of the shield, and a grounding point of the filter circuit are configured to be grounded via the impedance loop circuit, and this is applied to a high-voltage power supply unit that applies a high voltage to an electron gun of a charged particle beam apparatus.

MEASURING A HEIGHT PROFILE OF A HOLE FORMED IN NON-CONDUCTIVE REGION

A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.

ELECTRON MICROSCOPE DEVICE AND INCLINED HOLE MEASUREMENT METHOD USING SAME

An electron microscope device includes: a first detection means disposed at a high elevation angle for detecting electrons having relatively low energy; a second detection means disposed at a low elevation angle for detecting electrons having relatively high energy; a means for identifying, from a first image obtained from a first detector, a hole region in a semiconductor pattern within a preset region; a means for calculating for individual holes, from a second image obtained from a second detector, indexes pertaining to an inclined orientation and an inclination angle, on the basis of the distance between the outer periphery of the hole region and the hole bottom; and a means for calculating, from the results measured for the individual holes, indexes pertaining to an inclined orientation of the hole and an inclination angle of the hole as representative values for the image being measured.

Charged Particle Beam Device

The purpose of the present invention is to provide a charged particle beam device which adjusts brightness and contrast or adjusts focus and the like appropriately in a short time even if there are few detected signals. Proposed as an aspect for achieving this purpose is a charged particle beam device provided with: a detector for detecting charged particles obtained on the basis of irradiation of a specimen with a charged particle beam emitted from a charged particle source; and a control unit for processing a signal obtained on the basis of the output of the detector, wherein the control unit performs statistical processing on gray level values in a predetermined region of an image generated on the basis of the output of the detector, and executes signal processing for correcting a difference between a statistical value obtained by the statistical processing and reference data relating to the gray level values of the image.

Charged Particle Beam Apparatus
20190355552 · 2019-11-21 ·

The present invention provides a charged particle beam apparatus that covers a wide range of detection angles of charged particles emitted from a sample. Accordingly, the present invention proposes a charged particle beam apparatus that is provided with an objective lens for converging charged particle beams emitted from a charged particle source, and a detector for detecting charged particles emitted from a sample, wherein: the objective lens includes an inner magnetic path and an outer magnetic path which are formed so as to enclose a coil; the inner magnetic path comprises a first inner magnetic path disposed at a position opposite to an optical axis of the charged particle beams and a second inner magnetic path which is formed at a slant with respect to the optical axis of the charged particle beams and which includes a leading end of the magnetic path; and a detection surface of the detector is disposed at the outer side from a virtual straight line that passes through the leading end of the magnetic path and that is parallel to the optical axis of the charged particle beams.

SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD USING SCANNING ELECTRON MICROSCOPE

Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy. Therefore, in the scanning electron microscope that includes an electron source 201 that emits a primary electron, a sample stage 213 on which a sample is placed, a deflector 207 that causes the sample to be scanned with the primary electron, an objective lens 203 that focuses the primary electron on the sample, and a detector 206 that detects a secondary electron generated by irradiating the sample with the primary electron, a potential applied to the sample stage is controlled to have a negative polarity with respect to a potential applied to the objective lens during a first period in which the sample is irradiated with the primary electron, and the potential applied to the sample stage is controlled to have a positive polarity with respect to the potential applied to the objective lens during a second period in which the sample is not irradiated with the primary electron.

Charged particle beam device

Deflection of a secondary beam, and astigmatism correction of a primary beam or of the secondary beam are carried out using a multi-pole electromagnetic deflector which deflects the path of the secondary beam toward a detector.

Charged Particle Beam Apparatus

Provided is a charged particle beam apparatus, aiming at obtaining an image and the like focused on the sample surface and the bottom while preventing the visual field deviation occurred when focusing on the sample surface and the bottom respectively. The charged particle beam apparatus forms a first image (301), which is based on detection of the first energy charged particles, based on an irradiation with a beam whose focus is adjusted on a sample surface side, forms a second image (304) which is based on detection of second energy charged particles having a relatively higher energy than the first energy and a third image (303) which is based on the detection of the first energy charged particles, based on the irradiation with a beam whose focus is adjusted on a bottom side of a pattern included in the sample, acquires a deviation between the first image and the third image, and composes the first image and the second image so as to correct the deviation.