A method of inspecting a sample with a charged particle beam device is described. The method comprises arranging the sample on a stage, determining a first focusing strength of an objective lens adapted to focus a charged particle beam on a first surface region of the sample that is arranged at a first distance from the objective lens in a direction of an optical axis, calculating a difference between the first distance and a predetermined working distance based on the determined first focusing strength, adjusting a distance between the first surface region and the objective lens by the calculated difference, and inspecting the first surface region. According to a further aspect, a charged particle beam device configured to be operated according to the above method is described.

A displacement measuring apparatus includes an illumination system to obliquely irradiate the target object surface with beams, a sensor to receive a reflected light from the target object surface, an optical system to diverge the reflected light in a Fourier plane with respect to the target object surface, a camera to image a diverged beam in the Fourier plane, a gravity center shift amount calculation circuitry to calculate a gravity center shift amount of the reflected light in the light receiving surface of the sensor, based on a light quantity distribution of the beam imaged by the camera, and a measurement circuitry to measure a heightwise displacement of the target object surface by an optical lever method, using information on a corrected gravity center position obtained by correcting the gravity center position of the reflected light received by the sensor by using the gravity center shift amount.

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

Control system configured for sample tracking in an electron microscope environment registers a movement associated with a region of interest located within an active area of a sample under observation with an electron microscope. The registered movement includes at least one directional constituent. The region of interest is positioned within a field of view of the electron microscope. The control system directs an adjustment of the electron microscope control component to one or more of dynamically center and dynamically focus the view through the electron microscope of the region of interest. The adjustment comprises one or more of a magnitude element and a direction element.

Control system configured for sample tracking in an electron microscope environment registers a movement associated with a region of interest located within an active area of a sample under observation with an electron microscope. The registered movement includes at least one directional constituent. The region of interest is positioned within a field of view of the electron microscope. The control system directs an adjustment of the electron microscope control component to one or more of dynamically center and dynamically focus the view through the electron microscope of the region of interest. The adjustment comprises one or more of a magnitude element and a direction element.

.[.Linear fiducials including notches or chevrons with known angles relative to each other are formed such that each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired..]. .Iadd.Linear fiducials including notches or chevrons with known angles relative to each other are formed such that each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired..Iaddend.

A method of inspecting a sample with a charged particle beam device is described. The method comprises arranging the sample on a stage, determining a first focusing strength of an objective lens adapted to focus a charged particle beam on a first surface region of the sample that is arranged at a first distance from the objective lens in a direction of an optical axis, calculating a difference between the first distance and a predetermined working distance based on the determined first focusing strength, adjusting a distance between the first surface region and the objective lens by the calculated difference, and inspecting the first surface region. According to a further aspect, a charged particle beam device configured to be operated according to the above method is described.

Atmospheric scanning electron microscope achieves a wide field of view at low magnifications in a broad range of gaseous pressure, acceleration voltage and image resolution. This is based on the use of a reduced size pressure limiting aperture together with a scanning beam pivot point located at the small aperture at the end of electron optics column. A second aperture is located at the principal plane of the objective lens. Double deflection elements scan and rock the beam at a pivot point first at or near the principal plane of the lens while post-lens deflection means scan and rock the beam at a second pivot point at or near aperture at the end of the optics column. The aperture at the first pivot may act also as beam limiting aperture. In the alternative, with no beam limiting aperture at the principal plane, maximum amount of beam rays passes through the lens and with no post-lens deflection means, the beam is formed (limited) by a very small aperture at or near-and-below the final lens while the aperture skims a shifting portion of the wide beam, which is physically rocked with a pivot on the principal plane but with an apparent pivot point close and above the aperture, all of which result in a wide field of view on the examined specimen.

Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.

According to one aspect of the present invention, an optical system adjustment method of an image acquisition apparatus includes: extracting one primary electron beam after another from primary electron beams at a plurality of preset positions among multiple primary electron beams; and adjusting, a first detector being capable of individually detecting multiple secondary electrons emitted due to irradiation of a target with the multiple primary electron beams, a trajectory of the one primary electron beam using a primary electron optics while detecting secondary electrons corresponding to the one primary electron beam for each of the primary electron beams extracted one by one using a movable second detector having an inspection surface of a size capable of detecting the multiple secondary electrons as a whole and arranged on an optical path for guiding the multiple secondary electrons to the first detector.