A method of inspecting a sample is described which includes a multilevel structure with a first layer that is arranged above a second layer. The method includes: arranging the sample in a vacuum chamber; directing a primary electron beam onto the sample such that first primary electrons of the primary electron beam are backscattered by the first layer to form first backscattered electrons and second primary electrons of the primary electron beam are backscattered by the second layer to form second backscattered electrons; and detecting signal electrons comprising the first backscattered electrons and the second backscattered electrons for obtaining spatial information on both the first layer and the second layer. Further, an apparatus including one or more electron microscopes for inspecting a sample including a multilevel structure is described.

Provided is a charged particle beam device for which deterioration in throughput in the event of abnormality of multiple beams can be prevented. The charged particle beam device includes: a stage 11 on which a sample is mounted; a charged particle optical system configured to irradiate the sample with multiple beams including multiple primary beams; a detector 15 configured to detect secondary beams generated by interactions between the primary beams and the sample and output detection signals; and a control unit 17 configured to control the stage and the charged particle optical system to generate image data based on the detection signals from the detector obtained by scanning the sample with the multiple beams using a first scanning method. The control unit changes, when the abnormality of the multiple beams is detected based on the image data, the multiple beams to scan the sample using a second scanning method, and a scanning width of the multiple beams for scanning the sample is greater in the second scanning method than in the first scanning method.

A cross-section processing-and-observation method includes: a cross-section exposure step of irradiating a sample with a focused ion beam to expose a cross-section of the sample; a cross-sectional image acquisition step of irradiating the cross-section with an electron beam to acquire a cross-sectional image of the cross-section; and a step of repeatedly performing the cross-section exposure step and the cross-sectional image acquisition step along a predetermined direction of the sample at a setting interval to acquire a plurality of cross-sectional images of the sample. In the cross-sectional image acquisition step, a cross-sectional image is acquired under different condition settings for a plurality of regions of the cross-section.

A method of operating a multi-column electron beam array for quality inspection of a semiconductor wafer involves dividing the whole wafer area collectively in equally divided areas allocated to each column of the array, and assigning each of the areas as a column working space having the same dimensions and orientations. The array of column working spaces are assigned to an array of column optical axes, wherein a field of view of each column is defined as a covered region in which critical wafer patterns can be scanned by one or more columns to take an image. The stage supporting the wafer is moved such that each column working space is fully covered by the field of view of each column completely. By utilizing arbitrary waveform generators in electron inspection columns, this method also can be extended to write independent arbitrary patterns in predetermined positions in each die on a wafer.

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

Atmospheric scanning electron microscope achieves a wide field of view at low magnifications in a broad range of gaseous pressure, acceleration voltage and image resolution. This is based on the use of a reduced size pressure limiting aperture together with a scanning beam pivot point located at the small aperture at the end of electron optics column. A second aperture is located at the principal plane of the objective lens. Double deflection elements scan and rock the beam at a pivot point first at or near the principal plane of the lens while post-lens deflection means scan and rock the beam at a second pivot point at or near aperture at the end of the optics column. The aperture at the first pivot may act also as beam limiting aperture. In the alternative, with no beam limiting aperture at the principal plane, maximum amount of beam rays passes through the lens and with no post-lens deflection means, the beam is formed (limited) by a very small aperture at or near-and-below the final lens while the aperture skims a shifting portion of the wide beam, which is physically rocked with a pivot on the principal plane but with an apparent pivot point close and above the aperture, all of which result in a wide field of view on the examined specimen.

Notches or chevrons with known angles relative to each other are formed on a surface of the sample, where each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

A multi-electron beam system that forms hundreds of beamlets can focus the beamlets, reduce Coulomb interaction effects, and improve resolutions of the beamlets. A Wien filter with electrostatic and magnetic deflection fields can separate the secondary electron beams from the primary electron beams and can correct the astigmatism and source energy dispersion blurs for all the beamlets simultaneously.

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.