A method discloses topography information extracted from scanning electron microscope (SEM) images to determine the atomic force microscope (AFM) image scanning speed at each sampling point or in each region on a sample. The method includes the processing of SEM images to extract possible topography features and create a feature metric map (step 1), the conversion of the feature metric map into AFM scan speed map (step 2), and performing AFM scan according to the scan speed map (step 3). The method enables AFM scan with higher scan speeds in areas with less topography feature, and lower scan speeds in areas that are rich in topography features.

In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.

An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including a thermal conditioning station for preconditioning a temperature of a wafer is disclosed. The charged particle beam apparatus may scan the wafer to measure one or more characteristics of the structures on the wafer and analyze the one or more characteristics. The charged particle beam apparatus may further determine a temperature characteristic of the wafer based on the analysis of the one or more characteristics of the structure and adjust the thermal conditioning station based on the temperature characteristic.

The present invention proposes a pattern measurement tool characterized by being provided with: a charged-particle beam sub-system having a tilt deflector; and a computer sub-system which is connected to the charged-particle beam sub-system and which is for executing measurement of a pattern on the basis of a signal obtained by said charged-particle beam sub-system, wherein the charged-particle beam sub-system acquires at least two signal profiles by scanning beams having at least two incidence angles, the computer sub-system measures the dimension between one end and the other end of the pattern on the basis of the at least two signal profiles, calculates the difference between the two measurements, and calculates the height of the pattern by inputting the difference value determined by said calculation into a relational formula indicating the relation between the height of the pattern and said difference value.

An edge detection system is provided that generates a scanning electron microscope (SEM) linescan image of a pattern structure including a feature with edges that require detection. The edge detection system includes an inverse linescan model tool that receives measured linescan information for the feature from the SEM. In response, the inverse linescan model tool provides feature geometry information that includes the position of the detected edges of the feature.

An electron beam apparatus including: an electron beam source configured to generate an electron beam; a beam conversion unit including an aperture array configured to generate a plurality of beamlets from the electron beam, and a deflector unit configured to deflect one or more groups of the plurality of beamlets; and a projection system configured to project the plurality of beamlets onto an object, wherein the deflector unit is configured to deflect the one or more groups of the plurality of beamlets to impinge on the object at different angles of incidence, each beamlet in a group having substantially the same angle of incidence on the object.

The backside of a planar view lamella is prepared from a sample extracted from a workpiece. The sample includes multiple device layers and a substrate layer. After removing at least a part of the substrate layer covering a final device layer to obtain a sample surface, a region of interest (ROI) relative to the sample surface is alternately scanned with an electron beam and spontaneously etched until the final device layer within the ROI is exposed. One or more device layers may be removed from the sample backside after the final device layer is exposed to obtain the backside of the planar view lamella.

In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, using the model to predict the low-probability stochastic defect, determining a process window based on the low-probability stochastic defect, and controlling, based on the process window, a lithography tool to manufacture a device.

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

Methods and apparatus for inspecting features on a substrate including exposing at least a portion of the substrate to a first electron beam landing energy to obtain a first image; exposing the at least a portion of the substrate to a second electron beam landing energy to obtain a second image, wherein the second electron beam landing energy is different from the first electron beam landing energy; realigning the first image and the second image to a feature on the substrate; and determining from at least one measurement from the first image associated with the feature and at least one measurement from the second image associated with the feature if the feature is leaning or twisting.