A mask inspection apparatus includes an image acquisition mechanism that acquires an optical image of the pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident direction of the inspection light used for inspecting the pattern formed on the EUV mask, and the arrangement direction of the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus.

An improved electron beam manipulator for manipulating an electron beam in an electron projection system and a method for manufacturing thereof are disclosed. The electron beam manipulator comprises a body having a first surface and a second surface opposing to the first surface and an interconnecting surface extending between the first surface and the second surface and forming an aperture through the body. The body comprises an electrode forming at least part of the interconnecting surface between the first surface and the second surface.

Embodiments of the present disclosure provide an apparatus match detection method, a detection system, a prewarning method and a prewarning system, the apparatus match detection method includes: providing a to-be-detected wafer, a first detection apparatus, and a second detection apparatus; measuring by the first detection apparatus a critical dimension of the first detection area to acquire a first detection result; measuring by the second detection apparatus a critical dimension of the third detection area to acquire a third detection result; measuring by the first detection apparatus a critical dimension of the second detection area to acquire a second detection result; acquiring a measurement difference between the first detection apparatus and the second detection apparatus based on the first detection result, the second detection result, and the third detection result; and acquiring a degree of deviation between the second detection apparatus and the first detection apparatus based on the measurement difference.

A method for calibrating a process model of a patterning process. The method includes identifying a portion of the substrate that has values within a tolerance band of one or more parameters (e.g., CD, EPE, etc.) of the patterning process, obtaining, via a metrology tool, metrology data corresponding to the portion of the substrate, processing the metrology data, and calibrating a process model based on the processed metrology data.

A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

According to one embodiment, an electron beam device includes a support which supports the sample and an electrode disposed below the sample on the support The electrode is for applying a voltage to the sample and includes a plurality of columnar electrodes that can be independently controlled to apply different voltages to portions of the sample. A controller for generating correction data for correcting the distribution of an electric field generated across the area of the sample. The correction data is generated based on structure information indicating a structure of the sample. The controller controls the plurality of columnar electrodes to apply local voltages set based on the correction data.

An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a plurality of test images of a sample that are obtained at different landing energies, determining distortion levels for the plurality of test images, determining a landing energy level that enables the sample to be in a neutral charge condition during inspection based on the distortion levels, and acquiring an inspection image based on the determined landing energy level.

A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

In one embodiment, an electron beam inspection apparatus includes an optical system irradiating a substrate with primary electron beams, a beam separator separating, from the primary electron beams, secondary electron beams emitted as a result of irradiating the substrate with the primary electron beams, a detector detecting the secondary electron beams separated, a movable stage on which the substrate is placed, a support base supporting the substrate on the stage, and an applying unit applying a first voltage to the substrate. The support base includes a plurality of support pins that support the substrate from below. The support pins each include a columnar insulator and a metal film disposed in the insulator. A second voltage is applied to the metal film.

An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein Nis an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.