A charged particle beam writing apparatus according to an embodiment starts a wiring operation when the sum of the amount of shot data stored in a buffer memory of a transfer control calculator, the amount of shot data being transferred by a transfer unit, and the amount of shot data stored in a buffer memory of a deflection control circuit reaches the amount of data for one stripe region.

In one embodiment, a method is for generating write data for resizing a write pattern to be written with an energy beam. The method includes connecting vertices of the write pattern with a plurality of vectors, extracting a pair of collinear vectors pointing in opposite directions from the vectors, dividing the write pattern into a plurality of figures with a line passing between two adjacent ends of the extracted pair of vectors and extending in a direction orthogonal to the pair of vectors, and generating write data for each of the figures, the write data containing figure data and resizing information, the figure data indicating a shape, a size, and a position of the figure, the resizing information indicating resizing or non-resizing, resizing directions in the resizing, and an amount of resizing in each of the resizing directions.

A charged particle beam writing apparatus includes a buffer memory including a memory region capable of contemporarily storing writing data for data processing regions, wherein writing data including data files is temporarily stored for each of the data processing regions, a dividing unit to divide the memory region of the buffer memory into a first region being large and a second region being small, a specifying unit to specify the memory region such that a data file being large is preferentially stored in the first region and a data file being small is stored at least in the second region, concerning the data files for each of the data processing regions included in the writing data, and a data processing unit to read data files corresponding to each of the data processing regions from the buffer memory, and to perform data processing using the read data files.

An improved process control for a charged beam system is provided that allows the capability of accurately producing complex two and three dimensional structures from a computer generated model in a material deposition process. The process control actively monitors the material deposition process and makes corrective adjustments as necessary to produce a pattern or structure that is within an acceptable tolerance range with little or no user intervention. The process control includes a data base containing information directed to properties of a specific pattern or structure and uses an algorithm to instruct the beam system during the material deposition process. Feedback through various means such as image recognition, chamber pressure readings, and EDS signal can be used to instruct the system to make automatic system modifications, such as, beam and gas parameters, or other modifications to the pattern during a material deposition run.

To implement a charged particle beam device including an iron thin film spin detector. The charged particle beam device includes: a charged particle column 201 configured to perform scanning on a sample 203 with a charged particle beam 202; a spin detector including an iron thin film 207, a plurality of coils 208 configured to magnetize the iron thin film, a conveying lens 206 configured to focus, on the iron thin film, secondary electrons 204 emitted from the sample due to irradiation of the charged particle beam, and an electron detector 210 configured to detect backscattered electrons 209 emitted due to the iron thin film being irradiated with the secondary electrons; and a control unit 217 configured to control switching of a magnetization direction of the iron thin film in synchronization with scanning of one line with the charged particle beam from the charged particle column.