Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA is a non-universal cutter.

According to one aspect of the present invention, a multiple charged particle beam lithography apparatus includes a circuitry configured to divide a lithography region of a target object into a plurality of pixel regions having a mesh shape and being irradiated with multiple charged particle beams; a circuitry configured to group the plurality of pixel regions into a plurality of pixel blocks configured with at least one pixel region; a circuitry configured to correct position deviation in unit of a pixel block for each pixel block of the plurality of pixel blocks; a dose calculating processing circuitry configured to calculate a dose being irradiated on the pixel concerned for each pixel where the position deviation is corrected; and a mechanism configured to write a pattern on the target object by using the multiple charged particle beams so that each pixel is illuminated with the calculated dose.

A multi charged particle beam writing apparatus includes a maximum irradiation time acquisition processing circuitry to acquire, for each shot of multi-beams, a maximum irradiation time of irradiation time of each of the multi-beams, a unit region writing time calculation processing circuitry to calculate, using the maximum irradiation time for each shot, a unit region writing time by totalizing the maximum irradiation time of each shot of a plurality of times of shots of the multi-beams which irradiate a unit region concerned during stage moving, for each unit region of a plurality of unit regions obtained by dividing a writing region of a target object, a stage speed calculation processing circuitry to calculate speed of the stage for each unit region so that the stage speed becomes variable, by using the unit region writing time and a stage control processing circuitry to variably control the stage speed.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

The invention relates to a lithography system comprising an optical column, a moveable target carrier for displacing a target such as a wafer, and a differential interferometer module, wherein the interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to an interferometer module and method for measuring such a displacement and rotations.

A pattern inspection apparatus includes a data processing circuitry to input detection data based on a secondary electron from a substrate for each irradiation unit region, where n.sub.1m.sub.1 irradiation unit regions in irradiation unit regions configure one of n.sub.2m.sub.2 image reference regions configuring an inspection measurement image, to calculate, for each of the n.sub.2m.sub.2 image reference regions, a statistic value acquired from the detection data of all the n.sub.1m.sub.1 irradiation unit regions in one of the n.sub.2m.sub.2 image reference regions, and to define the statistic value as image reference data for the image reference region, and a comparison processing circuitry to receive transmission of the image reference data for each image reference region, and to compare, using a reference image corresponding to the inspection measurement image composed of the n.sub.2m.sub.2 image reference regions, the measurement image with the reference image for each image reference region.

The invention relates to a differential interferometer module adapted for measuring a direction of displacement between a reference mirror and a measurement mirror. In an embodiment the differential interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to a lithography system comprising such a interferometer module and a method for measuring such a displacement and rotations.

The invention relates to a lithography system comprising an optical column, a moveable target carrier for displacing a target such as a wafer, and a differential interferometer module, wherein the interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to an interferometer module and method for measuring such a displacement and rotations.

A method of measuring beam positions of multi charged particle beams includes acquiring a number of multi charged particle beams needed for the measurement reproducibility of a current amount to be within the range of an allowable value. The method further includes setting measurement points depending on a desired dimensional accuracy value in an irradiation region irradiated by the whole of the multi charged particle beams, and setting, for each of a plurality of measurement points, a beam region, including a measurement point of measurement points irradiated by a plurality of beams whose number is the number of beams needed for the measurement reproducibility in the multi charged particle beams. Further, the method includes measuring, for each of a plurality of measurement points, the position of a measurement point concerned in a plurality of measurement points by using a plurality of beams of a corresponding beam region.