A multiple charged particle beam writing apparatus includes a rotatable shaping aperture array substrate, including plural openings, to form/shape multiple beams by letting portions of a charged particle beam individually pass through the plural openings, a data rotation correction circuitry to read writing data from a storage device, and generate pattern data, in which the entire figure pattern has been reversely rotated against a rotational deviation direction of an aperture array image by a rotational deviation amount of the aperture array image, using information on the rotational deviation amount of the aperture array image of the multiple beams on the target object caused by a residual error of rotation adjustment of the shaping aperture array substrate, and a blanking aperture array mechanism, rotatable with the shaping aperture array substrate, to provide individual blanking control of the multiple beams, based on the pattern data of the figure pattern reversely rotated.

A charged particle beam optical apparatus has a plurality of irradiation optical systems each of which irradiates an object with a charged particle beam and a first control apparatus configured to control a second irradiation optical system on the basis of an operation state of a first irradiation optical system.

The objective of the present invention is to provide a charged-particle beam device capable of moving a field-of-view to an exact position even when moving the field-of-view above an actual sample. In order to attain this objective, a charged-particle beam device is proposed comprising an objective lens whereby a charged-particle beam is focused and irradiated onto a sample: a field-of-view moving deflector for deflecting the charged-particle beam; and a stage onto which the sample is placed. The charged-particle beam device is equipped with a control device which controls the lens conditions for the objective lens in such a manner that the charged-particle been focuses on the sample which is to be measured; moves the field-of-view via the field-of-view moving deflector while maintaining the lens conditions; acquires a plurality of images at each position among a reference pattern extending in a specified direction; and uses the plurality of acquired images to adjust the signal supplied to the field-of-view moving deflector.

In one embodiment, a multi charged particle beam writing apparatus includes an aperture plate forming multiple beams, a stage on which a writing target substrate is placed, a stage position detector detecting the position of the stage, an inspection aperture plate provided in the stage, the inspection aperture plate permitting one of the multiple beams to pass through the inspection aperture plate, a deflector deflecting the multiple beams, a current detector detecting a beam current of each of the multiple beams scanned over the inspection aperture plate in X and Y directions and passed through the inspection aperture plate, and a control computer generating a beam image based on the detected beam currents and calculating positions of the beams based on the beam image and the position of the stage.

According to one aspect of the present invention, a charged particle beam apparatus includes fogging charged particle amount distribution operation processing circuitry that operates a fogging charged particle amount distribution by performing convolution integration of a distribution function in which a design distribution center of fogging charged particles is shifted and a exposure intensity distribution in which a design irradiation center of a charged particle beam is not shifted; positional displacement operation processing circuitry that operates a positional displacement based on the fogging charged particle amount distribution; correction processing circuitry that corrects an irradiation position using the positional displacement; and a charged particle beam column including an emission source that emits the charged particle beam and a deflector that deflects the charged particle beam to irradiate a corrected irradiation position with the charged particle beam.

According to one embodiment, provided is a deflection sensitivity calculation method for calculating deflection sensitivity of a deflector in an electron beam irradiation apparatus that irradiates an irradiation object on a stage with an electron beam by causing the deflector to deflect the electron beam, the deflection sensitivity calculation method including: irradiating an area that covers an adjustment plate with an electron beam by scanning a deflection parameter that controls deflection of the deflector in a predetermined width; detecting a current value detected from the adjustment plate; forming an image corresponding to the detected current value, a number of pixels of the image being known; calculating the number of pixels of a portion corresponding to the adjustment plate in the formed image; and calculating the deflection sensitivity of the deflector.

A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

A multiple beam image acquisition apparatus includes a stage to mount thereon a target object, a beam forming mechanism to form multiple primary electron beams and a measurement primary electron beam, a primary electron optical system to collectively irradiate the target object surface with the multiple primary electron beams and the measurement primary electron beam, a secondary electron optical system to collectively guide multiple secondary electron beams generated because the target object is irradiated with the multiple primary electron beams, and a measurement secondary electron beam generated because the target object is irradiated with the measurement primary electron beam, a multi-detector to detect the multiple secondary electron beams collectively guided, a measurement mechanism to measure a position of the measurement secondary electron beam collectively guided, and a correction mechanism to correct a trajectory of the multiple secondary electron beams by using a measured position of the measurement secondary electron beam.

A multiple charged particle beam writing apparatus includes a rotatable shaping aperture array substrate, including plural openings, to form/shape multiple beams by letting portions of a charged particle beam individually pass through the plural openings, a data rotation correction circuitry to read writing data from a storage device, and generate pattern data, in which the entire figure pattern has been reversely rotated against a rotational deviation direction of an aperture array image by a rotational deviation amount of the aperture array image, using information on the rotational deviation amount of the aperture array image of the multiple beams on the target object caused by a residual error of rotation adjustment of the shaping aperture array substrate, and a blanking aperture array mechanism, rotatable with the shaping aperture array substrate, to provide individual blanking control of the multiple beams, based on the pattern data of the figure pattern reversely rotated.

The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.