A device for detecting X-rays radiated out of a substrate surface, said device comprising at least one X-ray detector, a resolver grating and a modulator grating, said resolver grating with at least one opening facing towards said X-ray detector is arranged in front of said X-ray detector. Said modulator grating is provided between said resolver grating and said substrate at a predetermined distance from said resolver grating and said substrate, where said modulator grating having a plurality of openings in at least a first direction, wherein said x-rays from said surface is spatially modulated with said modulator grating and resolver grating.

The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

A device for detecting X-rays radiated out of a substrate surface, said device comprising at least one X-ray detector, a resolver grating and a modulator grating, said resolver grating with at least one opening facing towards said X-ray detector is arranged in front of said X-ray detector. Said modulator grating is provided between said resolver grating and said substrate at a predetermined distance from said resolver grating and said substrate, where said modulator grating having a plurality of openings in at least a first direction, wherein said x-rays from said surface is spatially modulated with said modulator grating and resolver grating.

The scanning charged particle beam microscope according to the present invention is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

System and method for preventing blurring of an image in a scanning direction caused by a signal processing delay of a detector. of a charged particle beam device. The charged particle beam device is configured to calibrate first image data generated based on a detection signal output from a detector when the sample is two-dimensionally scanned with the charged particle beam, to generate second image data, in which the the second image data is generated using n first signal profiles each of which corresponds to a signal strength distribution in a first direction and which are extracted from the first image data, and a power spectral density P(f) (f: spatial frequency) of a window function corresponding to the signal processing delay of the detector.

A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.

A method of measuring beam positions of multi charged particle beams includes acquiring a number of multi charged particle beams needed for the measurement reproducibility of a current amount to be within the range of an allowable value. The method further includes setting measurement points depending on a desired dimensional accuracy value in an irradiation region irradiated by the whole of the multi charged particle beams, and setting, for each of a plurality of measurement points, a beam region, including a measurement point of measurement points irradiated by a plurality of beams whose number is the number of beams needed for the measurement reproducibility in the multi charged particle beams. Further, the method includes measuring, for each of a plurality of measurement points, the position of a measurement point concerned in a plurality of measurement points by using a plurality of beams of a corresponding beam region.

Multiple reference fiducials are formed on a sample on a sample for charged particle beam facilities processing of the sample. As one fiducial is degraded by the charged particle beam, a second fiducial is used to create one or more additional fiducials.

A method is provided for forming a three-dimensional article through successive fusion of parts of a powder bed. The method includes the steps of: applying a first powder layer on a work table; directing an electron beam from an electron beam source over the work table, the directing of the electron beam causing the first powder layer to fuse in first selected locations according to a pre-determined model, so as to form a first part of a cross section of the three dimensional article, and intensity modulating X-rays from the powder layer or from a clean work table with a patterned aperture modulator and a patterned aperture resolver, wherein a verification of at least one of a size, position, scan speed, or shape of the electron beam is achieved by comparing detected intensity modulated X-ray signals with saved reference values.

A semiconductor analysis system includes a machining device that machines a semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, and outputs the updated acquisition conditions to the transmission electron microscope device