In one embodiment, a multi-beam writing method is for irradiating each of pixels defined on a substrate, placed on a stage, with each beam of a multi-beam to form a pattern. The method includes obtaining a position correction amount of the pattern by each of a plurality of sub-arrays into which an array of the multi-beam is divided at least in a predetermined direction, based on the positional deviation amount of each beam of each of the sub-arrays, which obtained by dividing an array of the multi-beam at least in the predetermined direction, calculating an dose of the each beam irradiated to each pixel for shifting the position of the pattern drawn for each of the sub-arrays based on the position correction, and performing multi-writing using at least a portion of each two or more of the sub-arrays with the calculated dose.

Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

In one embodiment, a multi charged particle beam writing apparatus includes a measurement unit measuring a first beam shape of a multi-beam based on a beam current of each beam of the multi-beam or an intensity of charged particles reflected from a reflection mark provided on a stage, an amounts of adjustment calculator calculating amounts of adjustment of a reduction ratio and a rotation angle of the multi-beam based on the first beam shape, a correction map generation unit generating a first correction map in which an amount of displacement is defined that is obtained for each beam of the multi-beam based on a difference between a beam shape based on the amounts of adjustment and the first beam shape, a writing data processor generating shot data in which an amount of irradiation with each beam of the multi-beam is defined by converting writing data in which information regarding a graphic pattern to be written is defined, and correcting the amount of irradiation with each beam defined in the shot data based on the first correction map, and a controller controlling the reduction ratio and rotation angle of the multi-beam based on the amounts of adjustment.

A multiple charged particle beam writing apparatus includes a defective pattern data generation circuitry configured to generate defective pattern data of a defective pattern having a shape of the defective region in the writing region; a reverse pattern data generation circuitry configured to generate reverse pattern data by reversing the defective pattern data; a combined-value pixel data generation circuitry configured to generate, for the each pixel, combined-value pixel data by adding a value defined in a reverse pattern pixel data and a value defined in a writing pattern pixel data; and a writing mechanism configured to perform multiple writing, using multiple charged particle beams, on the target object such that the each pixel is irradiated with a beam of a dose corresponding to a value defined in the combined-value pixel data.

A beam irradiation device that irradiates a plurality of electron beams includes a multibeam optical system that emits the plurality of beams to be irradiated on a target; and a controller that controls an irradiation state of each of the plurality of beams in accordance with change in a relative position between the target and the multibeam optical system, and based on the irradiation state of a first beam of the plurality of beams, controls the irradiation state of a second beam of the plurality of beams.

Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

A multiple electron beam irradiation apparatus includes a first region setting circuit which sets a first frame region of a plurality of first frame regions which can be irradiated with remaining beams after excluding beams in one row and one column at end; a second region setting circuit which sets a second frame region of a plurality of second frame regions each having four corners equivalent to an irradiation position of the defective beam by using normal beams; and an electron beam irradiation mechanism which performs the first multiple electron beam irradiation processing for the each of the plurality of first frame regions of the target object by using the normal beams, and perform second multiple electron beam irradiation processing for each of the plurality of second frame regions by using at least beams at the four corners.

A method for process analysis includes acquiring first inspection data, using a first inspection modality, with respect to a substrate having multiple instances of a predefined pattern of features formed thereon using different, respective sets of process parameters. Characteristics of defects identified in the first inspection data are processed so as to select a first set of defect locations in which the first inspection data are indicative of an influence of the process parameters on the defects. Second inspection data are acquired, using a second inspection modality having a finer resolution than the first inspection modality, of the substrate at the locations in the first set. The defects appearing in the second inspection data are analyzed so as to select, from within the first set of the locations, a second set of the locations in which the second inspection data are indicative of an optimal range of the process parameters.

A charged-particle beam writing apparatus includes a writing chamber to house a stage having a writing object placed thereon, a beam irradiator to irradiate a charged particle beam to the writing object placed on the stage, a stage driver to move the stage, a temperature distribution calculator to calculate temperature distribution of the writing object caused by a heat source in the writing chamber, based on movement history information of the stage, a deformed amount calculator to calculate a deformed amount of the writing object based on a constraint condition of the writing object placed on the stage and the calculated temperature distribution, and a position corrector to correct an irradiation position of the charged particle beam to the writing object based on the calculated deformed amount. The beam irradiator irradiates the charged particle beam based on the irradiation position corrected by the position corrector.

An exposure apparatus scans a substrate in a Y-axis direction and also adjusts irradiation position of a plurality of beams, based on correction information obtained from the same number of distortion tables as the beams, the distortion tables including information concerning change of irradiation position of the plurality of beams of a multibeam optical system. Especially, the irradiation position of the plurality of beams in the Y-axis direction is adjusted by individually controlling irradiation timing of the plurality of beams irradiated on the substrate from the multibeam optical system.