An apparatus for monitoring of an ion beam. The apparatus may include a processor; and a memory unit coupled to the processor, including a display routine, where the display routine operative on the processor to manage monitoring of the ion beam. The display routine may include a measurement processor to receive a plurality of spot beam profiles of the ion beam, the spot beam profiles collected during a fast scan of the ion beam and a slow mechanical scan of a detector, conducted simultaneously with the fast scan. The fast scan may comprise a plurality of scan cycles having a frequency of 10 Hz or greater along a fast scan direction, and the slow mechanical scan being performed in a direction parallel to the fast scan direction. The measurement processor may also send a display signal to display at least one set of information, derived from the plurality of spot beam profiles.

To provide a three-dimensional printing device that irradiates approximately the same ranges on the surface of a powder layer simultaneously with a plurality of electron beams having different beam shapes. An electron beam column 200 of the three-dimensional printing device 100 includes a plurality of electron sources 20 including electron sources having anisotropically-shaped beam generating units, and beam shape deforming elements 30 that deform the beam shapes of electron beams output from the electron sources 20 on a surface 63 of a powder layer 62. A deflector 50 included in the electron beam column 200 deflects an electron beam output from each of the plurality of electron sources 20 by a distance larger than the beam space between electron beams before passing through the deflector 50.

An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.

An apparatus for monitoring of an ion beam. The apparatus may include a processor; and a memory unit coupled to the processor, including a display routine, where the display routine operative on the processor to manage monitoring of the ion beam. The display routine may include a measurement processor to receive a plurality of spot beam profiles of the ion beam, the spot beam profiles collected during a fast scan of the ion beam and a slow mechanical scan of a detector, conducted simultaneously with the fast scan. The fast scan may comprise a plurality of scan cycles having a frequency of 10 Hz or greater along a fast scan direction, and the slow mechanical scan being performed in a direction parallel to the fast scan direction. The measurement processor may also send a display signal to display at least one set of information, derived from the plurality of spot beam profiles.

A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes a plurality of ion beam optical elements configured to selectively steer and/or shape the ion beam as it is transported toward a workpiece, wherein the ion beam is sampled at a high frequency to provide a plurality of ion beam current samples, which are then analyzed to detect fluctuations and/or nonuniformities or unpredicted variations amongst the plurality of ion beam current samples. Beam current samples are compared against predetermined threshold levels, and/or predicted nonuniformity levels to generate a control signal when a detected nonuniformity in the plurality of ion beam current density samples exceeds a predetermined threshold. A control system can be configured to generate a control signal for interlocking the ion beam transport in the ion implantation system or for varying an input to at least one beam optical element to control variations in beam current.

A high energy beam verification, calibration, and profiling system includes a conductive base plate, supports extending from the base plate, a plurality of conductors, a data logger electrically connected to the conductors, and a computer electrically connected to the data logger. Each conductor is supported by some of the supports such that each conductor is insulated from the conductive base plate. Each conductor has a profile intersecting with profiles of at least some of the other conductors to define a multidirectional and two-dimensional array of conductors. The data logger receives and records data associated with electrical charges flowing through the conductors. The computer is adapted to receive, manipulate, and display the data recorded by the data logger for comparison of beam characteristics at different locations across a high energy beam build area.

A method for analyzing disturbing influences in a multi-beam particle microscope which operates using a plurality of individual charged particle beams arranged in a raster arrangement includes the following steps: providing an object; stationary scanning the object at a first position via the plurality of the individual particle beams during a predetermined irradiation time T, as a result of which latent structures are formed on the object; raster scanning the object comprising the first position with the formed latent structures via the plurality of the individual particle beams; and analyzing the latent structures.

An apparatus for monitoring of an ion beam. The apparatus may include a processor; and a memory unit coupled to the processor, including a display routine, where the display routine operative on the processor to manage monitoring of the ion beam. The display routine may include a measurement processor to receive a plurality of spot beam profiles of the ion beam, the spot beam profiles collected during a fast scan of the ion beam and a slow mechanical scan of a detector, conducted simultaneously with the fast scan. The fast scan may comprise a plurality of scan cycles having a frequency of 10 Hz or greater along a fast scan direction, and the slow mechanical scan being performed in a direction parallel to the fast scan direction. The measurement processor may also send a display signal to display at least one set of information, derived from the plurality of spot beam profiles.

An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

A high energy beam verification, calibration, and profiling system includes a conductive base plate, supports extending from the base plate, a plurality of conductors, a data logger electrically connected to the conductors, and a computer electrically connected to the data logger. Each conductor is supported by some of the supports such that each conductor is insulated from the conductive base plate. Each conductor has a profile intersecting with profiles of at least some of the other conductors to define a multidirectional and two-dimensional array of conductors. The data logger receives and records data associated with electrical charges flowing through the conductors. The computer is adapted to receive, manipulate, and display the data recorded by the data logger for comparison of beam characteristics at different locations across a high energy beam build area.