The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.

An example particle therapy system includes: a synchrocyclotron to output a particle beam; a magnet to affect a direction of the particle beam to scan the particle beam across at least part of an irradiation target; scattering material that is configurable to change a spot size of the particle beam, where the scattering material is down-beam of the magnet relative to the synchrocyclotron; and a degrader to change an energy of the beam prior to output of the particle beam to the irradiation target, where the degrader is down-beam of the scattering material relative to the synchrocyclotron.

Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

A method of forming a product using additive layer manufacture is provided. The method comprises forming the product as a series of layers, each layer being formed by fusing powder deposited as a powder bed by scanning the powder bed using a charged particle beam to form a desired layer shape. For each layer, the powder is fused by melting successive areas of the powder bed by scanning the charged particle beam using a combination of a relatively long-range deflector and a relatively short-range deflector, wherein the relatively long-range deflector deflects the charged particle beam over a larger deflection angle than the short-range deflector. Also provided are a corresponding charged particle optical assembly, and an additive layer manufacturing apparatus.

A multiple charged particle writing method includes performing a tracking operation by shifting the main deflection position of multiple beams using charged particle beams in the direction of stage movement so that the main deflection position of the multiple beams follows the stage movement while a predetermined number of beam shots of the multiple beams are performed, and shifting the sub deflection position of the multiple beams so that each beam of the multiple beams straddles rectangular regions among plural rectangular regions obtained by dividing a writing region of a target object into meshes by the pitch size between beams of the multiple beams, and the each beam is applied to a different position in each of the rectangular regions straddled, and applying a predetermined number of shots per beam using plural beams in the multiple beams to each of the plural rectangular regions, during the tracking operation.

Provided is an electron gun that can have a setting to make it possible to irradiate a desired location on an irradiation target with an electron beam having a desired electron beam parameter by using only the component included in the electron gun. This object can be achieved by an electron gun including: a light source; a photocathode configured to generate releasable electrons in response to receiving light from the light source; an anode configured to generate an electric field between the photocathode and the anode, extract the releasable electrons by the generated electric field, and form an electron beam; and a control unit, and the control unit sets the number of emission times of the electron beam and sets an electron beam parameter for each emitting electron beam, or sets an emission duration of the electron beam and sets an electron beam parameter of an emitting electron beam in association with the emission duration.

An example particle therapy system includes: a synchrocyclotron to output a particle beam; a magnet to affect a direction of the particle beam to scan the particle beam across at least part of an irradiation target; scattering material that is configurable to change a spot size of the particle beam, where the scattering material is down-beam of the magnet relative to the synchrocyclotron; and a degrader to change an energy of the beam prior to output of the particle beam to the irradiation target, where the degrader is down-beam of the scattering material relative to the synchrocyclotron.

A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

In one embodiment, a multi charged particle beam writing apparatus includes a stage position detector detecting a position of the stage which holds a substrate to be written, a mark disposed on the stage, a beam position detector detecting a beam position of each beam by allowing the multiple beams to pass over the mark, a beam shape detector detecting a beam shape of the multiple beams at predetermined time intervals based on the detected beam position and the detected position of the stage, the multiple beams being used to irradiate the substrate, and a writing data processor calculating an amount of irradiation correction of each beam for correcting the beam shape based on the detected beam shape.

Even a region where powder is melted is scanned by an electron beam at the highest speed. A three-dimensional shaping apparatus includes an electron gun that generates an electron beam, at least one first deflector that deflects the electron beam one-dimensionally or two-dimensionally, at least one lens that is provided between the electron gun and the first deflector and focuses the electron beam, and a second deflector that is provided between the electron gun and the first deflector and deflects the electron beam one-dimensionally or two-dimensionally.