Operating a particle beam apparatus includes processing, imaging, and/or analyzing an object. When guiding the particle beam along first dwell regions of a first scan line, the particle beam remains at each of the first dwell regions for a first dwell time. When guiding the particle beam along second dwell regions of a second scan line, the particle beam remains at each of the second dwell regions for a second dwell time. The first dwell time is shorter than the second dwell time. Alternatively, a first region of the first dwell regions has a first spacing with respect to a closest arranged adjacent second region of the first dwell regions. A first region of the second dwell regions has a second spacing with respect to a closest arranged adjacent second region of the second dwell regions. The second spacing is smaller than the first spacing.

A method for initializing a first operation in a first module at a first start time value in a first time base, the method comprising generating a clock signal, generating a second time base in the first module based on the clock signal, determining a second sync value in the second time base, determining a first sync value in the first time base corresponding to a second sync value in the second time base, determining a start trigger value in the second time base based on the first sync value and the start time value in the first time base, and initializing the first operation in the first module based on the start trigger value and a current value of the second time base in the first module.

Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

A method for irradiating a planning target volume with charged particles includes delivering the charged particles to the planning target volume with a charged particle therapy system including a charged particle beam path and a gantry configured to rotate about the planning target volume and to direct the charged particle beam path; rotating the gantry, during an irradiation session, to a plurality of positions; during the rotation, irradiating the planning target volume with the charged particles at a first energy level at one or more of the plurality of positions.

This invention can maintain the temperature of the shaping plane in a three-dimensional layer-by-layer shaping apparatus. A three-dimensional layer-by-layer shaping apparatus includes a material spreader that spreads the material or materials of a three-dimensional layer-by-layer shaped object onto the shaping plane on which the three-dimensional layer-by-layer shaped object is to be shaped; an electron gun that generates an electron beam; at least one deflector that deflects the electron beam so that it scans the shaping plane one- or two-dimensionally; at least one lens that is positioned between the electron gun and the deflector, and focuses the electron beam; a focus controller that controls the focus of the electron beam based on which region is to be scanned by the electron beam; and a controller that controls the deflecting direction of the deflector and the scanning rate.

An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

A cross-section processing and observation method performed by a cross-section processing and observation apparatus comprises a cross-section processing step of forming a cross-section by irradiating a sample with an ion beam; a cross-section observation step of obtaining an observation image of the cross-section by irradiating the cross-section with an electron beam; and repeating the cross-section processing step and the cross-section observation step so as to obtain observation images of a plurality of cross-sections. In a case where Energy Dispersive X-ray Spectrometry (EDS) measurement of the cross-section is performed and an X-ray of a specified material or of a non-specified material that is different from a pre-specified material is detected, an irradiation condition of the ion beam is changed so as to obtain observation images of a plurality of cross-sections of the specified material, and the cross-section processing and observation of the specified material is performed.

According to one aspect of the present invention, a multiple charged particle beam lithography apparatus includes a circuitry configured to divide a lithography region of a target object into a plurality of pixel regions having a mesh shape and being irradiated with multiple charged particle beams; a circuitry configured to group the plurality of pixel regions into a plurality of pixel blocks configured with at least one pixel region; a circuitry configured to correct position deviation in unit of a pixel block for each pixel block of the plurality of pixel blocks; a dose calculating processing circuitry configured to calculate a dose being irradiated on the pixel concerned for each pixel where the position deviation is corrected; and a mechanism configured to write a pattern on the target object by using the multiple charged particle beams so that each pixel is illuminated with the calculated dose.

An additive manufacturing device utilizing an electron beam and laser integrated scanning comprises: a vacuum generating chamber (1); a worktable means having a forming region at least provided in the vacuum generating chamber (1); a powder supply means configured to supply a powder to the forming region; an electron-beam emission focusing and scanning means (6) and an laser-beam emission focusing and scanning means (7) configured in such a manner that a scanning range of the electron-beam emission focusing and scanning means (6) and a scanning range of the laser-beam emission focusing and scanning means (7) cover at least a part of the forming region; and a controller configured to control the electron-beam emission focusing and scanning means (6) and the laser-beam emission focusing and scanning means (7) to perform a powder integrated-scanning and forming treatment on the forming region.

Provided among other things are a scanning electron microscope, scanning transmission electron microscope, focused ion beam microscope, ion beam micromachining device, or scanning probe nanofabrication device, wherein the microscope or device is configured to move a substrate and a scanning modality relative to one another with an enclosed sinusoidal trajectory, and methods of operation.