According to one aspect of the present invention, a position measurement apparatus, includes a movable stage, a target object having an uneven mark with a concave surface and a convex surface formed of a same material being placed on the stage; and a position calculation circuit configured to calculate a position of the uneven mark using a height position distribution of the surface of the target object as the height information of the surface of the target object, the height position distribution of the surface of the target object being obtained by performing a scan with the laser light so as to cross the uneven mark and generated by a relative positional relationship between the predetermined light intensity distribution and the uneven mark.

According to one aspect of the present invention, a background waveform acquisition method includes scanning a target object with an electron beam, at a plurality of regions which are in a vicinity of a line pattern on the target object where a mark using the line pattern is formed, and are arranged in a direction not parallel to an extending direction of the line pattern, and determining a waveform of a background which is not the mark, in a plurality of measured waveforms measured by the scanning at the plurality of regions, and outputting the waveform of the background.

A system and method for the precise and uniform material removal or delayering of a large area of a sample is provided. The size of the milled area is controllable, ranging from sub-millimeter to multi-millimeter scale and the depth resolution is controllable on the nanometer scale. A controlled singularly charged ion beam is scanned across the sample surface in such a manner to normalize the ion density distribution from the sample center toward the periphery to realize uniform delayering.

An ion implantation method includes generating a first scan beam, based on a first scan signal, measuring a beam current of the first scan beam by using a beam measurement device at a plurality of measurement positions, calculating a beam current matrix, based on a time waveform of the beam current measured by the beam measurement device and a time waveform of the scan command values determined in the first scan signal, calculating a first beam current density distribution of the first scan beam in a predetermined direction by performing time integration on the measured beam current, correcting a value of each component of the beam current matrix, based on the first beam current density distribution, and generating a second scan signal for realizing a target beam current density distribution in the predetermined direction, based on the corrected beam current matrix.

A method of producing a non-uniform ion implant in a workpiece, including storing a target pattern as a target pattern array, analyzing the target pattern to identify maximal gradients, rotating the target pattern and the workpiece to align with a spot beam profile and a scan direction, and transposing the target pattern to a process array. The method further includes optimizing the process array, calculating a largest possible beam spot size, selecting a corresponding spot beam recipe, performing a test scan to determine a beam sweep angle of the spot beam, and rotating the target pattern, the process array, and the workpiece to account for the beam sweep angle. The method further incudes generating a predicted process dose pattern and comparing it to the target pattern, and calculating at least one measure of error representing a fidelity of the predicted process dose pattern to the target pattern.

In one embodiment, a slip evaluation method includes placing a calibration substrate in which at least one mark is formed on a movable stage in a charged particle beam writing apparatus, measuring a first position of the mark with the stage stopped, performing a slip trigger stage operation at an acceleration to be evaluated, measuring a second position of the mark with the stage stopped after the slip trigger stage operation is performed, and calculating an amount of slip of the calibration substrate based on the first position and the second position.