The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.

The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.

An ion beam current measurement device includes a first Faraday cup having a first ion beam entrance slit of a first width W.sub.1. The first Faraday cup is configured to generate a first current signal. The device further includes a second Faraday cup having a second ion beam entrance slit of a second width W.sub.2. The second Faraday cup is configured to generate a second current signal. The slit widths are designed such that W.sub.2 is greater than W.sub.1.

A system and method for creating various dopant concentration profiles using a single implant energy is disclosed. A plurality of implants are performed at the same implant energy but different tilt angles to implant ions at a variety of depths. The result of these implants may be a rectangular profile or a gradient profile. The resulting dopant concentration profile depends on the selection of tilt angles, doses and the number of implants. Varying tilt angle rather than varying implant energy to achieve implants of different depths may significantly improve efficiency and throughput, as the tilt angle can be changed faster than the implant energy can be changed. Additionally, this method may be performed by a number of different semiconductor processing apparatus.

An apparatus for monitoring of an ion beam. The apparatus may include a processor; and a memory unit coupled to the processor, including a display routine, where the display routine operative on the processor to manage monitoring of the ion beam. The display routine may include a measurement processor to receive a plurality of spot beam profiles of the ion beam, the spot beam profiles collected during a fast scan of the ion beam and a slow mechanical scan of a detector, conducted simultaneously with the fast scan. The fast scan may comprise a plurality of scan cycles having a frequency of 10 Hz or greater along a fast scan direction, and the slow mechanical scan being performed in a direction parallel to the fast scan direction. The measurement processor may also send a display signal to display at least one set of information, derived from the plurality of spot beam profiles.

A computer-implemented method for the simulation of an energy-filtered ion implantation (EFII) is provided, including: Determining at least one part of an energy filter; determining at least one part of an ion beam source; determining a simulation area in a substrate: implementing the determined at least one part of the energy filter, the determined at least one part of the ion beam source, the determined simulation area in the substrate; Determining a minimum distance between the implemented at least one part of the energy filter and the implemented substrate for enabling a desired degree of a lateral homogenization of the energy distribution in a doping depth profile of the implemented substrate; determining a maximum expected scattering angle of the energy filter by simulating an energy-angle spectrum for the energy filter; and defining a total simulation volume.

In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.

An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.

A computer-implemented method for the simulation of an energy-filtered ion implantation (EFII), including: Determining at least one part of an energy filter; determining a simulation area in a substrate; Defining an ion tunnel for receiving ions directed from an ion beam source; implementing the determined at least one part of the energy filter, the ion beam source, the determined simulation area in the substrate, and the defined ion tunnel in a simulation environment; determining a minimum distance between the implemented at least one part of the energy filter and the implemented substrate for enabling a desired degree of lateral homogenization of the energy distribution in a doping depth profile of the implemented substrate; and defining a total simulation volume.