Disclosed herein is a method for cross-section processing and observation, and apparatus therefore, the method including: performing a position information obtaining process of observing the entirety of a sample by using an optical microscope or an electron microscope, and of obtaining three-dimensional position coordinate information of a particular observation target object included in the sample; performing a cross-section processing process of irradiating a particular region in which the object is present by using a focused ion beam based on the information, and of exposing a cross section of the region; performing a cross-section image obtaining process of irradiating the cross section by using an electron beam, and of obtaining a cross-section image of a predetermined size region including the object; and performing a three-dimensional image obtaining process of repeating the cross-section processing process and the cross-section image obtaining process at predetermined intervals in a predetermined direction, and of obtaining a three-dimensional image from obtained multiple cross-section images.

Shaft members which respectively protrude toward at least one beam member and the other beam member in a z-axis direction are formed in a mesh support member. A through hole for penetrating a space between a shaft end surface and an opening portion in the z-axis direction and introducing a focused ion beam toward a fine sample piece is formed in at least one shaft member.

Curtaining artifacts on high aspect ratio features are reduced by reducing the distance between a protective layer and feature of interest. For example, the ion beam can mill at an angle to the work piece surface to create a sloped surface. A protective layer is deposited onto the sloped surface, and the ion beam mills through the protective layer to expose the feature of interest for analysis. The sloped mill positions the protective layer close to the feature of interest to reduce curtaining.

A system for creating a substantially planar face in a substrate, the system including directing one or more beams at a first surface of a substrate to remove material from a first location, the beam being offset from a normal to the first surface by a curtaining angle; sweeping the one or more beams in a plane that is perpendicular to the first surface to mill one or more initial cuts, the initial cuts exposing a second surface that is substantially perpendicular to the first surface; rotating the substrate about an axis other than an axis normal to the first beam or parallel to the first beam; directing the first beam at the second surface to remove additional material from the substrate without changing the curtaining angle; and scanning the one or more beams in across the second surface to mill one or more finishing cuts.

A charged particle beam apparatus which automatically prepares a sample piece from a sample, includes: a charged particle beam irradiation optical system configured to perform irradiation of a charged particle beam; a sample stage configured to move, the sample being placed on the sample stage; a sample piece relocation unit configured to hold and transport the sample piece which is separated and picked up from the sample; a holder fixing stage which holds a sample piece holder to which the sample piece is relocated; and a computer which performs positional control in relation to a target object based on a template and positional information which is obtained from an image of the target object, the template being generated based on an absorption current image of the target object which is acquired using the irradiation of the charged particle beam.

There is provided a control device for controlling a charged particle beam apparatus, wherein the beam apparatus comprises a workpiece stage having at least two turning axes which are not parallel to each other and an irradiation unit, and the control device comprises an angle calculation unit that based on a direction of a first processing in which a processed surface having a normal line not parallel to any of the turning axes is generated in the workpiece by the irradiation unit and a direction of a second processing to be processed by the irradiation unit from a direction different from the direction of the first processing with respect to the processed surface to be generated by the first processing, calculates turning angles about the turning axes that changes the direction of the stage from the direction of the first processing to the direction of the second processing.

Methods and apparatus are disclosed for the preparation of microscopic samples using light pulses. Material volumes greater than 100 μm.sup.3 are removed. The methods include inspecting an object with a scanning electron microscope (SEM) or a focused ion beam (FIB). The inspection includes recording an image of the object. The methods also includes delineating within the object a region to be investigated, and delineating a laser-machining path based on the image of the object so that a sample can be prepared out of the object. The methods further include using laser-machining along the delineated laser-machining path to remove a volume that is to be ablated, and inspecting the object with the scanning electron microscope (SEM) or a focused ion beam (FIB).

Disclosed herein is a focused ion beam apparatus moving a micro sample-piece between the focused ion beam apparatus and a sample observation apparatus by using simple configurations. The focused ion beam apparatus includes: a sample tray on which a sample is placed; a focused ion beam column irradiating the sample with a focused ion beam to obtain a micro sample-piece; a sample chamber receiving the sample tray and the focused ion beam column therein; a side-entry-type carrier being inserted into and removed from the chamber, with a front end side holding the sample-piece; and a sample-piece moving unit moving the sample-piece between the plate and the carrier, wherein the plate is movable on at least X, Y, and Z-axes respectively, and an end of the plate is provided with a carrier engagement part detachably fastened with the carrier, the carrier engagement part being moved with the carrier in company with movement of the plate.

Disclosed herein is a composite charged particle beam apparatus including a focused ion beam column and an electron beam column, the apparatus preventing the electron beam column from being contaminated so as to emit an electron beam with high precision. The apparatus includes: a sample tray on which a sample is placed; a focused ion beam column irradiating the sample by using a focused ion beam; an electron beam column irradiating the sample by using an electron beam; a sample chamber receiving the sample tray, and the columns therein; an anti-contamination plate moving between an inserted position inserted into a space between a beam emission surface of the electron beam column and the sample tray, and an open position withdrawn from the space between the beam emission surface and the sample tray; and an operation unit operating the anti-contamination plate to move between the positions.

A chicane blanker assembly for a charged particle beam system includes an entrance and an exit, at least one neutrals blocking structure, a plurality of chicane deflectors, a beam blanking deflector, and a beam blocking structure. The entrance is configured to accept a beam of charged particles propagating along an axis. The at least one neutrals blocking structure intersects the axis. The plurality of chicane deflectors includes a first chicane deflector, a second chicane deflector, a third chicane deflector, and a fourth chicane deflector sequentially arranged in series between the entrance and the exit and configured to deflect the beam along a path that bypasses the neutrals blocking structure and exits the chicane blanker assembly through the exit. In embodiments, the chicane blanker assembly includes a two neutrals blocking structures. In embodiments, the beam blocking structure is arranged between the third chicane deflector and the fourth chicane deflector.