The present disclosure provides one embodiment of an IC method. First pattern densities (PDs) of a plurality of templates of an IC design layout are received. Then a high PD outlier template and a low PD outlier template from the plurality of templates are identified. The high PD outlier template is split into multiple subsets of template and each subset of template carries a portion of PD of the high PD outlier template. A PD uniformity (PDU) optimization is performed to the low PD outlier template and multiple individual exposure processes are applied by using respective subset of templates.

The present disclosure provides one embodiment of an IC method. First pattern densities (PDs) of a plurality of templates of an IC design layout are received. Then a high PD outlier template and a low PD outlier template from the plurality of templates are identified. The high PD outlier template is split into multiple subsets of template and each subset of template carries a portion of PD of the high PD outlier template. A PD uniformity (PDU) optimization is performed to the low PD outlier template and multiple individual exposure processes are applied by using respective subset of templates.

In one embodiment, a blanking aperture array is for a multi-charged particle beam writing apparatus. The blanking aperture array includes a substrate and a plurality of blankers. Each of the plurality of blankers includes a blanking electrode and a ground electrode that are formed on a first surface of the substrate. The plurality of blankers includes at least a normal blanker which is capable of applying a predetermined voltage between the blanking electrode and the ground electrode and for which a through hole bored through the substrate is formed, and a defective blanker which is not capable of applying the predetermined voltage between the blanking electrode and the ground electrode and for which the through hole bored through the substrate is filled with a beam shield.

A charged particle beam lithography apparatus, includes a plurality of multiple-beam sets, each of which including a plurality of irradiation sources each generating an independent charged particle beam, a plurality of objective deflectors, each arranged for a corresponding charged particle beam, and configured to deflect the corresponding charged particle beam to a desired position on a substrate, and a plurality of electrostatic or electromagnetic lens fields each to focus the corresponding charged particle beam on the target object; a plurality of common deflection amplifiers, arranged for each multiple-beam set, and each of the plurality of common deflection amplifiers being configured to commonly control the plurality of objective deflectors arranged in a same multiple-beam set; a plurality of individual ON/OFF mechanisms configured to individually turn ON/OFF a beam irradiated from each irradiation source; and one or more multiple-beam clusters including the plurality of multiple-beam sets.

A method for compensating pattern placement errors during writing a pattern on a target in a charged-particle multi-beam exposure apparatus including a layout generated by exposing a plurality of beam field frames using a beam of electrically charged particles, wherein each beam field frame has a respective local pattern density, corresponding to exposure doses imparted to the target when exposing the respective beam field frames. During writing the beam field frames, the positions deviate from respective nominal positions because of build-up effects within said exposure apparatus, depending on the local pattern density evolution during writing the beam field frames. To compensate, a displacement behavior model is employed to predict displacements; a local pattern density evolution is determined, displacements of the beam field frames are predicted based on the local pattern density evolution and the displacement behavior model, and the beam field frames are repositioned accordingly based on the predicted values.

To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

A multiple charged particle beam writing apparatus includes a distribution coefficient calculation circuitry to calculate, using defective beam information based on which a defective beam can be identified, for each design grid in a plurality of design grids being irradiation positions in design of multiple charged particle beams, a distribution coefficient for each of three or more beams, for distributing a dose to irradiate a design grid concerned in the plurality of design grids to the three or more beams, excluding the defective beam, whose actual irradiation positions are close to or approximately coincident with the design grid concerned, such that the position of the gravity center of each distributed dose coincides with the position of the design grid concerned and the sum of each distributed dose after distribution coincides with the dose to irradiate the design grid concerned.

The present disclosure provides one embodiment of an IC method. First pattern densities (PDs) of a plurality of templates of an IC design layout are received. Then a high PD outlier template and a low PD outlier template from the plurality of templates are identified. The high PD outlier template is split into multiple subsets of template and each subset of template carries a portion of PD of the high PD outlier template. A PD uniformity (PDU) optimization is performed to the low PD outlier template and multiple individual exposure processes are applied by using respective subset of templates.

A multi charged particle beam writing apparatus according to one aspect of the present invention includes a plurality of first blankers to respectively perform blanking deflection of a corresponding beam in multiple beams having passed through the plurality of openings of the aperture member, a plurality of second blankers to deflect a defective beam in the multiple beams having passed through the plurality of openings of the aperture member to be in a direction orthogonal to a deflection direction of the plurality of first blankers, a blanking aperture member to block each of beams which were deflected to be in a beam off state by at least one of the plurality of first blankers and the plurality of second blankers, and a detection processing unit to detect a defective beam in the multiple beams having passed through the plurality of openings of the aperture member.

In one embodiment, a BAA apparatus 204 includes apertures 3, each of which being provided to blank charged particle beams 20. The apparatus 204 further includes first electrodes 6a, second electrodes 6b, first via plugs 5a, second via plugs 5c, drivers 2 and comparison circuitries 7 that are provided for each aperture 3, wherein a first electrode 6a and a second electrode 6b are opposite to each other, first and second via plug 5a and 5c are electrically connected to the first electrode 6a, a driver 2 supplies a driving signal to the first electrode 6a via the first via plug 5a, and a comparison circuitry 7 is provided to correspond to the first electrode 6a and compares the driving signal and a signal obtained from the second via 5c plug to output a comparison result signal indicating a result of the comparison.