A multiple charged particle beam writing apparatus includes a rotatable shaping aperture array substrate, including plural openings, to form/shape multiple beams by letting portions of a charged particle beam individually pass through the plural openings, a data rotation correction circuitry to read writing data from a storage device, and generate pattern data, in which the entire figure pattern has been reversely rotated against a rotational deviation direction of an aperture array image by a rotational deviation amount of the aperture array image, using information on the rotational deviation amount of the aperture array image of the multiple beams on the target object caused by a residual error of rotation adjustment of the shaping aperture array substrate, and a blanking aperture array mechanism, rotatable with the shaping aperture array substrate, to provide individual blanking control of the multiple beams, based on the pattern data of the figure pattern reversely rotated.

Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.

A semiconductor apparatus according to an embodiment is a semiconductor apparatus including substrate having a recess provided at a first substrate face, a plurality of through holes provided in a predetermined region of the recess, and a plurality of protrusions provided on the recess in the predetermined region.

In one embodiment, a method of obtaining a beam deflection shape includes using a plurality of beams to write a line pattern on a substrate by deflecting the plurality of beams, the plurality of beams being beams in the i-th row (i is an integer satisfying 1im) among multiple charged-particle beams including beams of m rows and n columns (m and n are integers equal to or greater than two), the deflection being performed in such a manner that a writing area for a beam in the j-th column (j is an integer satisfying 1jn1) is continuously adjacent to a writing area for a beam in the (j+1)th column, measuring a degree of unevenness of an edge of the line pattern, and obtaining a deflection shape of the beam based on the degree of unevenness.

A semiconductor apparatus according to an embodiment is a semiconductor apparatus including substrate having a recess provided at a first substrate face, a plurality of through holes provided in a predetermined region of the recess, and a plurality of protrusions provided on the recess in the predetermined region.

A charged particle beam optical apparatus has a plurality of irradiation optical systems each of which irradiates an object with a charged particle beam and a first control apparatus configured to control a second irradiation optical system on the basis of an operation state of a first irradiation optical system.

In one embodiment, a writing data generation method is for generating writing data used by a multi-charged particle beam writing apparatus. The writing data generation method includes referring to library data in which a vertex sequence including a plurality of vertices is registered, and extracting a portion of an outer line of a figure contained in design data, the portion corresponding to the vertex sequence, and representing the extracted portion by information which identifies the vertex sequence and information which indicates a connection method for the plurality of vertices of the vertex sequence, and generating the writing data.

Feedthrough device (50; 150), for forming a hermetic seal around signal conductors in a signal conductor group (60; 160) with a group width. The device comprises a slotted member (52; 152) and a base (62; 162). The base defines a through hole (65) that extends entirely through the base along a feedthrough direction (X), and is adapted to accommodate the slotted member. The slotted member defines first and second surfaces (53, 54; 153, 154) on opposite sides associated with the feedthrough direction, and a side surface (55, 56; 155, 156) facing transverse to the feedthrough direction. The slotted member comprises a slot (58; 158), which extends along the feedthrough direction through the slotted member, and opens into the first and second surfaces and into a longitudinal opening (59; 159) along the side surface. The slot extends transversely into the slotted member up to a slot depth at least equal to the signal conductor group width.

A method for re-calculating a pattern to be exposed on a target by means of a charged-particle multi-beam writing apparatus is presented. The pattern elements of a pattern, initially associated with a respective assigned dose, are recalculated in view of obtaining reshaped pattern elements which have a nominal dose as assigned dose. The nominal dose represents a predefined standard value of exposure dose to be exposed for pixels during a scanning stripe exposure within the multi-beam apparatus. For the pattern elements associated with an assigned dose deviating from the nominal dose, the pattern element is reshaped by determining a reshape distance from the value of the assigned dose using a predefined dose slope function forming a reshaped pattern element, whose boundary is offset with regard to boundary of the initial pattern element by an offset distance equaling said reshape distance, assigning the nominal dose to the reshaped pattern element, and replacing the pattern element by the reshaped pattern element.

In one embodiment, a multi-charged-particle-beam writing apparatus includes a shaping aperture array plate including a plurality of first apertures through which a charged particle beam passes to form multiple beams, a movable stage on which a writing target substrate is placed, an inspection aperture plate disposed on the stage, the inspection aperture plate including a second aperture through which one of the multiple beams passes, a current detector detecting a current of the beam that has passed through the second aperture of the inspection aperture plate, a deflector deflecting the multiple beams, the deflector controlling deflection of one of the multiple beams such that the one beam is located at a predetermined position in a region including the second aperture and a surrounding region of the second aperture, and a calculator obtaining a beam position based on the beam current detected by the current detector.