In one embodiment, a charged particle beam lithography apparatus includes an irradiator 201 to irradiate substrates with charged particle beams, each of the substrates being provided with a predetermined mark, and a detector 114 to detect charged particles emitted when the predetermined mark is scanned by a charged particle beam and output a detection signal. The apparatus further includes an amplifier 124 to adjust and amplify the detection signal and output an amplified signal, and a measurement circuitry 211 to measure a location of the predetermined mark based on the amplified signal. The apparatus further includes storage 128 to store initial gain values of the amplifier for amplifying the detection signal, the initial gain values corresponding to conditions of the scan. The amplifier amplifies the detection signal based on an initial gain value selected from the initial gain values according to a condition of the scan.

A multi charged particle beam writing apparatus includes an irradiation time calculation circuit to calculate an irradiation time of a beam to each pixel, for each of a plurality of pixels which are obtained by dividing a writing region of a target object and each of which serves as an irradiation unit region per beam of multi charged particle beams, a gray-scale value calculation circuit to calculate, for each pixel, a gray-scale value of gradation by gray scale levels by dividing the irradiation time by a quantization unit, and a gray-scale value correction circuit to correct, for each of a plurality of groups each composed of adjacent pixels, dose errors each caused by gradation, by gray scale levels, of the irradiation time which occur in the adjacent pixels in a group concerned, by increasing or decreasing the gray-scale value of at least one pixel in the group concerned by 1.

In one embodiment, a method of obtaining a beam deflection shape includes using a plurality of beams to write a line pattern on a substrate by deflecting the plurality of beams, the plurality of beams being beams in the i-th row (i is an integer satisfying 1im) among multiple charged-particle beams including beams of m rows and n columns (m and n are integers equal to or greater than two), the deflection being performed in such a manner that a writing area for a beam in the j-th column (j is an integer satisfying 1jn1) is continuously adjacent to a writing area for a beam in the (j+1)th column, measuring a degree of unevenness of an edge of the line pattern, and obtaining a deflection shape of the beam based on the degree of unevenness.

In one embodiment, a charged particle beam writing apparatus includes a positioning deflector adjusting an irradiation position of a charged particle beam radiated to a substrate which is a writing target, a fixed deflector which is disposed downstream of the positioning deflector in a traveling direction of the charged particle beam, and in which an amount of deflection is fixed, a focus correction lens performing focus correction on the charged particle beam according to a surface height of the substrate, and an object lens focusing the charged particle beam.

A charged particle beam writing apparatus includes a number of shots calculation circuit to calculate the number of shots in the case where a deflection region is irradiated with a shot of a charged particle beam, a deflection position correcting circuit to correct a deflection position of the charged particle beam to be shot in the deflection region, depending on the number of shots to be shot in the deflection region, and a deflector to deflect the charged particle beam to a corrected deflected position on the target object.

A drawing apparatus includes: a drawing part; a cleaning-gas generator; a first valve between the cleaning-gas generator and the drawing part and adjusting a supply amount of gas to the drawing part; a first pressure gauge measuring a pressure in the drawing part; a compensation-gas introducing part introducing compensation-gas to be supplied between the cleaning-gas generator and the first valve; a second valve between the compensation-gas introducing part and the first valve and adjusting a supply amount of the compensation-gas;

and a valve controller controlling the first and second valves, wherein the valve controller controls the first valve to supply the cleaning-gas at a predetermined flow rate to the drawing part and controls the second valve to cause a pressure in the drawing part to be a predetermined pressure when the first pressure gauge detects a pressure reduction due to a reduction in a supply flow rate of the cleaning-gas.

A charged particle beam writing apparatus includes an area density calculation unit to calculate a pattern area density weighted using a dose modulation value, which has previously been input from an outside and in which an amount of correction of a dimension variation due to a proximity effect has been included, a fogging correction dose coefficient calculation unit to calculate a fogging correction dose coefficient for correcting a dimension variation due to a fogging effect by using the pattern area density weighted using the dose modulation value having been input from the outside, a dose calculation unit to calculates a dose of a charged particle beam by using the fogging correction dose coefficient and the dose modulation value, and a writing unit to write a pattern on a target object with the charged particle beam of the dose.

A charged particle beam writing apparatus according to one aspect of the present invention includes an emission unit to emit a charged particle beam, an electron lens to converge the charged particle beam, a blanking deflector, arranged backward of the electron lens with respect to a direction of an optical axis, to deflect the charged particle beam in the case of performing a blanking control of switching between beam-on and beam-off, a blanking aperture member, arranged backward of the blanking deflector with respect to the direction of the optical axis, to block the charged particle beam having been deflected to be in a beam-off state, and a magnet coil, arranged in a center height position of the blanking deflector, to deflect the charged particle beam.

In one embodiment, a charged particle beam writing method includes writing a first pattern statically in central part of a first substrate having Charge Dissipation Layer (CDL), calculating, based on a position of the written first pattern, a first correction coefficient, writing a second pattern statically applying with the first correction coefficient in central part of a second substrate having no CDL, calculating, based on a position of the written second pattern, a second correction coefficient, writing a third pattern continuously applying with the first correction coefficient in central part of a third substrate having CDL, calculating, based on a position of the written third pattern, a third correction coefficient, writing a fourth pattern statically applying with the first correction coefficient in wide range of a fourth substrate having CDL, and calculating, based on a position of the written fourth pattern, a fourth correction coefficient.

According to one aspect of the present invention, a charged particle beam irradiation apparatus includes: a plurality of electrodes arranged in a magnetic field space of an electromagnetic lens and also arranged so as to surround a space on an outer side of a passing region of a charged particle beam; and a potential control circuit configured to control potentials of the plurality of electrodes so as to generate plasma in the space surrounded by the plurality of electrodes and so as to control movement of positive ions or electrons and negative ions generated by the plasma, wherein positive ions, electrons and negative ions, or active species are emitted from the space of the plasma.