In one embodiment, a multi charged particle beam writing apparatus includes a measurement unit measuring a first beam shape of a multi-beam based on a beam current of each beam of the multi-beam or an intensity of charged particles reflected from a reflection mark provided on a stage, an amounts of adjustment calculator calculating amounts of adjustment of a reduction ratio and a rotation angle of the multi-beam based on the first beam shape, a correction map generation unit generating a first correction map in which an amount of displacement is defined that is obtained for each beam of the multi-beam based on a difference between a beam shape based on the amounts of adjustment and the first beam shape, a writing data processor generating shot data in which an amount of irradiation with each beam of the multi-beam is defined by converting writing data in which information regarding a graphic pattern to be written is defined, and correcting the amount of irradiation with each beam defined in the shot data based on the first correction map, and a controller controlling the reduction ratio and rotation angle of the multi-beam based on the amounts of adjustment.

In one embodiment, a settling time determination method includes deflecting a charged particle beam by applying a voltage outputted from an amplifier to a first deflector while changing a deflection settling time, and writing an evaluation pattern, measuring a position of the evaluation pattern, and determining a position displacement amount of the measured position from a design position, performing fitting of the position displacement amount for the deflection settling time on a first output waveform of the amplifier, and determining a deflection settling time in which the position displacement amount is within a predetermined range.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.

In one embodiment, a drawing apparatus includes a drawer configured to draw a pattern on a plurality of regions with a beam, an operator configured to transfer a data for irradiating the plurality of regions with the beam, and a controller configured to control the drawing on the plurality of regions with the drawer, based on the data for the plurality of regions transferred from the operator. When performing the drawing on a first region and then the drawing on a second region, the controller corrects a state of the drawer between completion of drawing on the first region and completion of transfer of the data for the second region or the controller delays the completion of drawing on the first region to shorten time from the completion of drawing on the first region to the completion of transfer of the data for the second region.

A method for projecting a particle beam onto a substrate, the method includes a step of calculating a correction of the scattering effects of the beam by means of a point spread function modelling the forward scattering effects of the particles; a step of modifying a dose profile of the beam, implementing the correction thus calculated; and a step of projecting the beam, the dose profile of which has been modified, onto the substrate, and being wherein the point spread function is, or comprises by way of expression of a linear combination, a two-dimensional double sigmoid function. A method to e-beam lithography is also provided.

An electron beam irradiation method includes calculating a charge amount distribution in the case where a substrate is irradiated with an electron beam, by using an index indicating complexity of a pattern to be formed on the substrate, calculating a positional deviation amount of an irradiation pattern to be formed due to irradiation with the electron beam, by using the charge amount distribution having been calculated, correcting an irradiation position by using the positional deviation amount having been calculated, and applying an electron beam to the irradiation position having been corrected.

A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes determining a local pattern density for the area of the pattern based on an original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PLC maximum dose.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information. A dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A modified set of exposure information is output, including the increased dosage of the at least one pixel in the sub area.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.

A method of operating a semiconductor apparatus includes forming a first electron beam passing through a first shaping aperture; modifying an energy distribution of the first electron beam by a second shaping aperture, such that the first electron beam has a main region and an edge region having a greater energy than the main region; and exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.