A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.

In one embodiment, a first storage storing writing data, a second storage storing correction data for correcting an error in a writing position due to factors including bending of the substrate, a cell data allocator virtually dividing a writing region of the substrate into blocks, and allocating a cell to the blocks in consideration of the correction data, a plurality of bitmap data generators virtually dividing the blocks into meshes, calculating an irradiation amount per mesh region, and generating bitmap data which assigns the irradiation amount to each mesh region, and a shot data generator generating shot data that defines an irradiation time for each beam. The cell data allocator virtually divides the writing region by division lines in a direction different from a writing forward direction to generate a plurality of division regions. The plurality of bitmap data generators generate pieces of bitmap data of the different division regions.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information. A dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A modified set of exposure information is output, including the increased dosage of the at least one pixel in the sub area.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.

An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; a plurality of charged particle beam sources that are provided in the body tube, and emit a plurality of charged particle beams in a direction of extension of the body tube; a plurality of electromagnetic optical elements, each being corresponding to one of the plurality of charged particle beams in the body tube, and controls the one of the plurality of charged particle beams; first and second partition walls that are arranged separately from each other in the direction of extension in the body tube, and form non-vacuum spaces between at least parts of the first and second partition walls; and a depressurization pump that depressurizes a non-vacuum space that contacts the first partition wall and a non-vacuum space that contacts the second partition wall to an air pressure between zero and atmospheric pressure.

In a particle beam apparatus and a method for operating a particle beam apparatus, the particle beam apparatus has a column having a particle-beam optical system for generating a particle beam, to thereby expose a desired pattern in a vacuum sample chamber in an exposure operation. In a cleaning operation, a regulable gas stream having photodissociatable gas is fed to the column and/or the vacuum sample chamber via a gas-feed system. The photodissociation of the supplied gas is brought about in the cleaning operation with the aid of a plurality of light sources distributed spatially in the column and/or in the vacuum sample chamber. In the cleaning operation, individual light sources are able to be switched on and off selectively with respect to time via a control unit connected to the light sources, in order to clean individual elements in the column and/or in the vacuum sample chamber in targeted fashion.

A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

A drawing apparatus according to the embodiment includes a chamber configured to house a processing target; a drawing part configured to draw a predetermined pattern on the processing target with a charged particle beam; a resistance measuring part configured to measure a resistance value of the processing target via a grounding member grounding the processing target in the chamber; a receiver configured to receive earthquake information; a controller configured to stop a drawing process in the chamber when the receiver receives the earthquake information; and an arithmetic processor configured to determine whether the processing target is grounded on a basis of the resistance value from the resistance measuring part, wherein the controller resumes the drawing process when the arithmetic processor determines that the processing target is grounded after the drawing process is stopped.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.

A temperature measuring mask includes: a substrate 10; a temperature sensor 11 being provided to the substrate 10, and being capable of sensing a temperature inside a charged particle beam lithography device 4; a circuit board 12 being provided to the substrate 10, and including a measuring circuit 121A that measures the temperature using the temperature sensor 11 and a storage device 121B that stores measurement data of the measured temperature; a secondary cell 13 being provided to the substrate 10, and supplying electric power to the circuit 121A; and a photoelectric cell 14 being provided to the substrate 10, and generating electric power by being irradiated with an energy beam to charge the secondary cell 13.