Embodiments described herein relate to a gas line cleaning system and a method of cleaning gas lines. The gas line cleaning system includes a connector having a first end and a second end, and a fluid system. The fluid system includes a fluid source configured to flow a fluid through a fluid conduit connected to the first end, and an ultrasonic transducer coupled to the fluid conduit configured to apply an ultrasonic energy to the fluid conduit to agitate the fluid. The ultrasonic energy creates a mechanical energy that reverberates in the fluid conduit and propagates into the fluid to remove particles that may have formed on an inside surface of a gas line connected to the second end and carry away particles inside the gas line.

A substrate processing method capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes: a first operation of moving the substrate supporting apparatus in a first direction by a first predetermined distance; a second operation of moving the substrate supporting apparatus in a second direction by a second predetermined distance; a third operation of moving the substrate supporting apparatus in the second direction by the first predetermined distance; and a fourth operation of moving the substrate supporting apparatus in the first direction by the second predetermined distance, wherein the second direction may be opposite to the first direction.

A method and apparatus for nitride capping of titanium materials via chemical vapor deposition techniques is provided. The method includes forming a titanium nitride layer upon a titanium material layer formed on a substrate. The titanium nitride layer is formed by exposing the titanium material layer to a hydrogen-rich nitrogen-containing plasma followed by exposing the titanium material layer to a nitrogen-rich nitrogen-containing plasma. The titanium nitride layer is then exposed to an argon plasma followed by exposing the titanium nitride layer to a halide soak process.

Various embodiments herein relate to methods, apparatus, and systems for depositing a boron-based ceramic film on a substrate. Advantageously, the boron-based ceramic films described herein can be formed at relatively low temperatures (e.g., about 600C or less), while still achieving very high quality materials that exhibit good mechanical strength (e.g., high hardness and Young's modulus), good etch selectivity, amorphous morphology, etc. The films herein also have low hydrogen content, low oxygen content, and low halide content. In many cases, the films may be formed through a reaction between a boron halide and a saturated or unsaturated hydrocarbon, in the presence of plasma.

An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

A plasma CVD device which comprises a substrate having a three-dimensional shape such as that of a bottle and which can form a coating on the surface of various substrates under atmospheric pressure, and a coating forming method are provided. This atmospheric pressure remote plasma CVD device is provided with a dielectric chamber which has a gas inlet, an inner space and a plasma outlet, and a plasma generation device which generates plasma in the inner space. The plasma outlet is provided with a nozzle that has an opening area smaller than the average cross-sectional area of the cross-sections perpendicular to the direction of gas flow in the inner space.

A microwave plasma chemical vapor deposition device for diamond synthesis. A microwave source generates a microwave signal, and a resonant cavity receives a plurality of process gases. The microwave signal is spread in a first mode at a first waveguide. A mode conversion antenna converts the first mode of the microwave signal into a second mode that is spread at a second waveguide. A coupling conversion cavity receives and transmits the microwave signal in the second mode to the mode conversion antenna thereby converting the second mode of the microwave signal into a third mode. A medium viewport receives the microwave signal in the third mode and transmits to the resonant cavity which enables the microwave signal to excite and discharge the process gases to form spherical plasma, carbon containing groups and atomic hydrogen thereby depositing a diamond film on a seed.

A plasma enhanced chemical vapor deposition processing method is provided and includes: preheating a showerhead to a preheated state prior to and in preparation of a plasma enhanced chemical vapor deposition process of a substrate; determining at least one temperature of the showerhead while preheating the showerhead; determining based on the at least one temperature whether to continue preheating the showerhead; ceasing to preheat the showerhead in response to the at least one temperature satisfying a temperature criterion; and initiating the plasma enhanced chemical vapor deposition process while the showerhead is in the preheated state to package previously fabricated integrated circuits disposed on the substrate, wherein the plasma enhanced chemical vapor deposition process includes forming one or more film protective layers over the integrated circuits.

A plasma generation apparatus includes a housing fitted in a portion of an upper surface of a process chamber of a deposition apparatus and having a protruding portion having an elongated shape in a plan view and protruding upward from a bottom surface, a coil wound around a side surface of the protruding portion and having an elongated shape in the plan view, and an inclination adjustment mechanism configured to independently move upward and downward both ends in a longitudinal direction of the coil to change an inclination of the coil in the longitudinal direction.

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.