A method of growing one or more graphene sheets on one or more regions of an optical fiber using plasma-enhanced chemical vapor deposition (PECVD) includes placing the optical fiber in a growth chamber, placing one or more carbon-containing precursors in the growth chamber, forming a reduced pressure in the growth chamber, and flowing methane gas and hydrogen gas into the growth chamber. The method also includes generating a plasma in the growth chamber, forming a gaseous carbon-containing precursor from the one or more carbon-containing precursors, exposing the one or more regions of the optical fiber to the methane gas, the hydrogen gas, the gaseous carbon-containing precursor, and the plasma, and forming the one or more graphene sheets on the one or more regions of the optical fiber.

Disclosed herein are synthetic, or cultured diamonds which have at least one artificially embedded inclusion(s) incorporated within their crystal structure during the diamond's deposition or growth process. Disclosed are cultured diamonds having a substrate portion, artificially embedded inclusion(s) disposed on the substrate portion, and an encapsulating portion, formed on the artificially embedded inclusion(s). The substrate portion and the encapsulating portion are bonded together by covalent carbon to carbon bonds.

An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.

This disclosure describes systems, methods, and apparatus for waveform control, comprising: a power supply having an input terminal, and at least one output terminal for coupling to a load; a controller; a variable inductor coupled to at least one of the output terminals, the variable inductor comprising a first magnetic core having a plurality of arms, including at least a first inductor arm and a first control arm, wherein an inductance winding having one or more turns is wound around the first inductor arm, and wherein a first control winding comprising one or more turns is wound around the first control arm; and a DC current source coupled to the first control arm and the controller, the controller configured to adjust a DC bias applied by the DC current source to the first control arm to control an output waveform at the at least one output terminal.

Methods for forming a metal carbide liner in features formed in a substrate surface are described. Each of the features extends a distance into the substrate from the substrate surface and have a bottom and at least one sidewall. The methods include depositing a metal carbide liner in the feature of the substrate surface with a plurality of high-frequency ratio-frequency (HFRF) pulses. Semiconductor devices with the metal carbide liner and methods for filling gaps using the metal carbide liner are also described.

A method for processing a substrate includes: (a) exposing a substrate with a pattern formed on a surface thereof to a first reactive species in a chamber, thereby adsorbing the first reactive species onto the surface of the substrate; (b) exposing the substrate to plasma formed by a second reactive species in the chamber, thereby forming a film on the surface of the substrate; and (c) repeating a processing including (a) and (b) two or more times while changing a residence amount of the first reactive species at a time of starting (b).

Various kinematic mounts used to mount a carrier ring carrying a substrate to a pedestal within a processing chamber. Each of the various kinematic mounts provide a smooth gliding action during mounting, reduce the generation of unwanted particles and prevent free-fall of the carrier ring to the pedestal.

A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two, preferably more than two, power output ports each for connection to one of the plasma process chambers, and a controller configured to control the power converter to deliver the bipolar output power to the power output ports, using one or more control parameters selected from a list comprising: power, voltage, current, excitation frequency, and threshold for protective measures, such that at least one of the control parameters at a first power output port is different from the corresponding control parameter at a different power output port.

A radio frequency (RF) match assembly for a chemical vapor deposition processing chamber. The assembly includes a top electrically insulating column and a bottom electrically insulating column. The assembly further includes a one-piece RF match strap that has a head, a main body and a body extension. The main body of the one-piece RF match strap is configured to extend through the top electrically insulating column and the bottom electrically insulating column. A flexible chamber lid strap connects the processing chamber to the top of the one piece RF match strap.