A tungsten sintered compact sputtering target, wherein a molybdenum strength detected with a secondary ion mass spectrometer (D-SIMS) is equal to or less than 1/10000 of the tungsten strength. This target reduces the specific resistance of a tungsten film sputtered using the tungsten sintered compact target by reducing the molybdenum in the tungsten sintered compact sputtering target and adjusting the grain size distribution of the W powder that is used during sintering.

A reactor for plasma-assisted chemical vapor deposition includes a plasma duct for containing one or more substrates to be coated by ions; an arc discharge generation system for generating a flow of electrons through the plasma duct from a proximal end toward a distal end of the plasma duct; a gas inlet coupled to the distal end for receiving a reactive gas; a gas outlet coupled to the proximal end for removing at least a portion of the reactive gas to generate a flow of the reactive gas through the plasma duct from the distal end toward the proximal end, to generate the ions from collisions between the electrons and the reactive gas; and a separating baffle positioned for restricting flow of the reactive gas out of the plasma duct to maintain a high pressure in the plasma duct to increase rate of deposition of the ions onto the substrates.

A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a concave portion, and an opening portion is provided in the bottom portion of the concave portion. The sputtering apparatus includes a shield member configured to shield the opening portion from the sputtering space. The opening portion is formed so that a pressure gauge capable of measuring the pressure in the sputtering space can be attached, and the shield member is arranged so that at least a part of the shield member is buried in the concave portion.

In accordance with an embodiment of the present invention, a process tool includes a chuck configured to hold a substrate. The chuck is disposed in a chamber. The process tool further includes a shielding unit with a central opening. The shielding unit is disposed in the chamber over the chuck.

Methods and apparatus for improved metal ion filtering are provided herein. In some embodiments, a substrate processing apparatus includes: a chamber body and a chamber lid disposed on the chamber body defining a processing region within the chamber body beneath the lid; a collimator disposed in the processing region; a power source coupled to the collimator; and a first set of magnets disposed around the chamber body above the collimator and a second set of magnets disposed around the chamber body and below the collimator that together create a guidance magnetic field that is substantially orthogonal to the collimator.

A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.

An oxide sintered body is obtained by mixing and sintering a zinc oxide, an indium oxide, a gallium oxide and a tin oxide. The oxide sintered body has a relative density of 85% or more, and has volume ratios satisfying the following expressions (1) to (3), respectively, as determined by Xray diffractometry: (1) (Zn.sub.2SnO.sub.4 phase+InGaZnO.sub.4 phase)/(Zn.sub.2SnO.sub.4 phase+InGaZnO.sub.4 phase+In.sub.2O.sub.3 phase+SnO.sub.2 phase+(ZnO).sub.mIn.sub.2O.sub.3, phase)75% by volume; (2) Zn.sub.2SnO.sub.4 phase/(Zn.sub.2SnO.sub.4 phase+InGaZnO.sub.4 phase+In.sub.2O.sub.3 phase+SnO.sub.2 phase+(ZnO).sub.mIn.sub.2O.sub.3 phase)30% by volume; and (3) InGaZnO.sub.4 phase/(Zn.sub.2SnO.sub.4 phase+InGaZnO.sub.4 phase+In.sub.2O.sub.3 phase+SnO.sub.2 phase+(ZnO).sub.mIn.sub.2O.sub.3 phase)10% by volume, and m represents an integer of 2 to 5.

The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

The embodiments of the invention cover a ceramic sputtering target comprising at least 85 wt. % of an (In.sub.4Sn.sub.3O.sub.12 phase, wherein the ceramic sputtering target has a density of greater than 7.0 g/cm.sup.3. A method of forming an ITO ceramic sputtering target is also described by combining 53 to 65 wt. % of In.sub.2O.sub.3 and 35 to 47 wt. % of SnO.sub.2 to form a first In.sub.2O.sub.3/SnO.sub.2 mixture; mixing and milling the In.sub.2O.sub.3/SnO.sub.2 mixture in the presence of water and a dispersing agent until a first slurry is formed, wherein the average particle size of the first slurry is between 0.3-0.7 m and wherein the specific surface area is between 4-8.5 m.sup.2/g; drying the first slurry to form a powder; heat treating the powder at 1300 to 1500 C. to form a compound having an In.sub.4Sn.sub.3O.sub.12 phase; adding additional In.sub.2O.sub.3 and SnO.sub.2 to the compound having the In.sub.4Sn.sub.3O.sub.12 phase thereby forming an InSnO-based mixture having an atomic In/Sn ratio of 1.33; forming the ITO ceramic sputtering target.

Techniques are disclosed for methods and apparatuses for reducing particle contamination formation in a high temperature processing chamber with a cooled gas feed block. The cooled gas feed has a body. The body has a main center portion having a top surface and a bottom surface. The body also has a flange extending outward from the bottom surface of the main center portion. A gas channel is disposed through the body. The gas channel has an inlet formed in the top surface of the main center portion and an outlet formed in the bottom surface of the main center portion. The body also has a center coolant channel. The center coolant channel has a first portion having an inlet formed in the top surface of the main center portion, and a second portion coupled to the first portion, the second portion having an outlet formed a sidewall of the flange.