An etching method includes (a) providing a substrate including a carbon-containing film, the substrate being situated on a substrate support and (b) etching the substrate with a plasma to form an etching shape in the carbon-containing film, the plasma being configured to be formed from a gas containing H and O, the etching shape including a bottom. In (b), a temperature of the substrate support is adjusted to 0° C. or less.

Proposed is an edge ring for a semiconductor manufacturing process, and specifically, to an edge ring for a semiconductor manufacturing process, which has a denser surface structure by forming a denser boron carbide surface layer on the surface of a sintered body (base layer) formed of boron carbide powder and forming a mixed layer for preventing peeling between the base layer and the surface layer and improving physical properties therebetween, and thus the boron carbide sintered body is prevented from being cracked during a harsh plasma process, and particle generation caused by the cracking is effectively suppressed, and as a result, a defective product rate can be reduced, and a manufacturing method thereof.

A substrate processing apparatus is provided. The substrate processing apparatus includes a chamber comprising a support, the support configured to have mounted thereon a substrate; at least one channel disposed in the chamber and into which a conductive fluid or a non-conductive fluid is configured to be injected; and a control unit. The control unit includes a first pump and a second pump configured to respectively supply the conductive fluid and the non-conductive fluid to the at least one channel; and a first valve configured to receive the conductive fluid and the non-conductive fluid from the first pump and the second pump, respectively, and control proportions at which the conductive fluid and the non-conductive fluid are injected into the at least one channel.

The present disclosure provides a non-transitory computer-readable storage medium storing a control program of a plasma processing apparatus which performs a plasma processing by supplying a source power to a plasma generator and supplying a bias power to a stage that places a processing target substrate thereon. The control program causes a computer to execute a process including: monitoring a peak-to-peak voltage value of the source power or the bias power; and correcting the source power supplied to the plasma generator and the bias power supplied to the stage according to a fluctuation of the peak-to-peak voltage value, to make the monitored peak-to-peak voltage value approach an initial set value while fixing a ratio of the source power and the bias power.

Methods, systems, apparatuses, and computer programs are presented for controlling etch rate and plasma uniformity using magnetic fields. A semiconductor substrate processing apparatus includes a vacuum chamber including a processing zone for processing a substrate using capacitively coupled plasma (CCP). The apparatus further includes a magnetic field sensor configured to detect a signal representing a residual magnetic field associated with the vacuum chamber. At least one magnetic field source is configured to generate one or more supplemental magnetic fields through the processing zone of the vacuum chamber. A magnetic field controller is coupled to the magnetic field sensor and the at least one magnetic field source. The magnetic field controller is configured to adjust at least one characteristic of the one or more supplemental magnetic fields, causing the one or more supplemental magnetic fields to reduce the residual magnetic field to a pre-determined value.

In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.

Plasma processing chamber is provided where the plasma processing chamber has a first component. A first plurality of multilayers is disposed over the first component, wherein each multilayer comprises a process layer and a conditioning layer adjacent to the process layer, wherein the process layer is more etch resistant to a processing plasma than the conditioning layer and wherein the conditioning layer is configured to be selectively etched with respect to the process layer; and wherein the process layer is configured to be selectively etched with respect to the conditioning layer.

An upper electrode mechanism of a semiconductor process apparatus includes a radio frequency (RF) coil including two parallelly-connected branches, two current sensors each arranged on one of the branches and configured to detect a branch current of a corresponding one of the two branches, and a current adjustment device connected to the RF coil and configured to adjust the branch current of at least one branch of the two branches according to the detected branch currents to cause the branch currents of the two branches to be equal.

An impedance matching circuit, which is provided for quick impedance matching, a power supply apparatus, and a plasma processing equipment including the same are provided. The impedance matching circuit includes a parallel capacitor array connected to a radio frequency (RF) power supply to generate a RF signal, and a series capacitor array connected to the RF power supply in series, wherein the parallel capacitor array or the series capacitor array includes a mechanical vacuum variable capacitor and an electrical switch capacitor module connected to the mechanical vacuum variable capacitor in parallel.

An additive-containing aluminium nitride film is plasma etched. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium or erbium. A workpiece is placed upon a platen within a plasma chamber. The workpiece includes a substrate having an additive-containing aluminium nitride film deposited thereon and a mask disposed upon the additive-containing aluminium nitride film, which defines at least one trench. A first etching gas is introduced into the chamber with a first flow rate, a second etching gas is introduced into the chamber with a second flow rate, and a plasma is established within the chamber to etch the additive-containing aluminium nitride film exposed within the trench. The first etching gas comprises boron trichloride and the second etching gas comprises chlorine. A ratio of the first flow rate to the second flow rate is greater than or equal to 1:1.