A reaction chamber includes a chamber body, an inner lining, and a lifting drive device. The inner lining is arranged in the chamber body. A wafer transfer opening is arranged at a sidewall of the chamber body. The inner lining includes a first inner lining and a second inner lining. The first inner lining is fixedly connected to the chamber body. The second inner lining is coaxially sleeved outside or inner sleeved at the first inner lining. The first inner lining and the second inner lining include a gap in a horizontal direction. The lifting drive device is configured to be connected to the second inner lining, when performing process processing on a wafer, drive the second inner lining to a predetermined first position to cause the second inner lining to cover the wafer transfer opening and the first inner lining and the second inner lining to partially overlap.

In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

A plasma processing method of processing a substrate with plasma in a plasma processing apparatus. The plasma processing apparatus includes: a chamber configured to accommodate a substrate; an upper electrode structure forming an upper portion of the chamber and including a temperature-controlled plate, an electrode plate disposed below the temperature-controlled plate, and an electrostatic attractor, the electrostatic attractor including a contact surface, an attraction surface, a first electrode, and a second electrode; a power supply configured to apply a voltage to the first and second electrodes; and a temperature obtaining portion configured to acquire a temperature distribution of the electrode plate. The plasma processing method includes: acquiring, by the temperature obtaining portion, the temperature distribution; applying a first voltage to the first electrode and applying a second voltage to the second electrode according to the acquired temperature distribution; and processing the substrate with plasma.

An etching method is provided. The etching method is performed on a substrate having a first film to a third film. The third film is provided on an underlying region, the second film is provided on the third film, the first film is provided on the second film. The second film contains silicon and nitrogen. The first film to the third film are etched in sequence. Plasma of a processing gas containing fluorine and hydrogen is used in the etching of the first film to the third film. A temperature of the substrate is set to be equal to or less than 20 C. at least in the etching of the second film.

A plasma processing device according to one embodiment includes an upper electrode located in a processing chamber; a board that is located in the processing chamber, opposing the upper electrode, and includes a lower electrode, and on which an intended substrate is placed; a radio-frequency power feeder that supplies radio frequency power in-between the upper electrode and the lower electrode; a dummy ring that surrounds an annular periphery of the intended substrate located on the board; and a cooler that cools the dummy ring from a location away from the intended substrate in a boundary region between the dummy ring and the intended substrate.

A plasma processing apparatus includes a processing vessel; a placing table, serving as a lower electrode, disposed within the processing vessel; an upper electrode serving as a facing electrode of the placing table; a plasma processor configured to form a gas within the processing vessel into plasma by supplying a high frequency power and to process a processing target object on the placing table with the plasma; a cover member configured to cover the upper electrode from thereabove; a cooler provided within the cover member and configured to cool the upper electrode with a coolant having a temperature lower than a dew point temperature of exterior air outside the processing vessel; and a gas supply configured to supply a low-dew point gas having a dew point temperature lower than the dew point temperature of the exterior air into a space surrounded by the cover member and the upper electrode.

A substrate processing system includes model generation and setpoint modules. The model generation module receives a first time trace based on an output of an endpoint sensor and obtains a target setpoint. A portion of the first time trace is indicative of an endpoint at which a feature has been created in a first substrate. The target setpoint is generated based on a metrology process and is used to compensate for erosion of a first edge ring. The model generation module generates a conversion model based on the portion and the target setpoint. The setpoint module: based on the output, receives a second time trace that is generated subsequent to generation of the first time trace; and based on the conversion model, converts the second time trace to a predicted erosion compensation setpoint, which is set while processing a second substrate using the first or a second edge ring.

There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.

A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.