A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

A semiconductor processing system with improved plasma density is disclosed. The system includes a plasma chamber having a base, chamber walls and a top wall. An antenna is used to generate RF energy that is inductively coupled into the plasma chamber. The antenna comprises a plurality of coils that are proximate a dielectric window. One or more RF blockers are disposed adjacent to the dielectric window to block some of the RF energy from entering the plasma chamber. If the RF blocker is placed near a region of high plasma density, the density in that region may be reduced, improving the uniformity of the plasma density within the plasma chamber. Further, the RF blockers may have openings and may also be overlapped to create varying degrees of blocking.

A system for mounting the shield ring to the pedestal in a plasma chamber is disclosed. The mounting system includes compliant hardware. A fastener with a compliant component, such as an O-ring, is first secured to the pedestal. The shield ring has a top surface, a bottom surface and walls extending downward from the inner and outer diameter of the shield ring. Bores are located on the bottom surface of the shield ring. The bores of the shield ring are aligned with the fasteners and the shield ring is then pressed down onto the fasteners. As the shield ring is being pressed down, the walls of the bores force the compliant hardware to yield. When in place, the compliant hardware supplies the requisite compression force to hold the shield ring in place. The compliant hardware may be implemented in various manners.

An ion source is disclosed, in which the compression force applied to the faceplate on the two sides of the extraction aperture may be varied independently. Modifying the compression force between the faceplate and arc chamber can enable temperature control of the ion source by modifying the thermal contact resistance between the two components. This may allow more control of the temperature of the faceplate, and more specifically, the temperature profile across the entire faceplate due to precise control of the thermal contact gradient along the length of the faceplate. The ion implantation system includes two adjustable tension systems, each of which includes an actuator. A controller is used to provide a command signal to each adjustable tension system. In some embodiments, a feedback signal is generated by each adjustable tension system, which is representative of the torque or force experienced by the actuator.

Disclosed herein is a method for duty factor ramped timed ion implant matching. The method includes receiving, by a processing circuit, a duty cycle parameter from a user interface associated with the processing circuit. The method further includes generating, by the processing circuit, a control signal for a wafer pulse power supply of a plasma doping system to alter a pulse duty cycle of the wafer pulse power supply according to the duty cycle parameter. The method further includes sending, by the processing circuit, the control signal to the wafer pulse power supply to thereby alter a duty cycle of a pulse signal generated by the wafer pulse power supply.

A multi-plenum gas manifold is disclosed and includes a monolithic body, a first plenum and a second plenum. The first plenum is arranged within the monolithic body and configured to distribute to or divert from one or more substrate processing stations a first gas species. The first plenum includes a first cavity and a first set of channels extending outward from the first cavity. The second plenum is arranged within the monolithic body isolated from the first plenum and configured to distribute to or divert from the one or more substrate processing stations a second gas species. The second plenum includes a second cavity disposed radially outward of the first cavity. The second set of channels extends outward from the second cavity.

An amorphous silicon layer or amorphous boron layer can be deposited on a substrate using one or more silicon or boron-containing precursors, respectively. Radical species are provided from a plasma source or from a controlled reaction chamber atmosphere to convert the amorphous silicon layer to a doped silicon layer with composition tunability. An initiation layer is deposited on one or more semiconductor device structures having a dielectric layer over an electrically conductive layer. The initiation layer may be conformally deposited by a CVD-based process and may comprises amorphous silicon, doped silicon, amorphous boron, or doped boron.