A substrate processing device includes substrate holder, a plurality of ultraviolet irradiators, and controller. The substrate holder holds a substrate. The ultraviolet irradiators irradiate gaps between a plurality of fine structures formed on the substrate held by the substrate holder with ultraviolet rays in spectra different from each other. The controller controls the plurality of ultraviolet irradiators.

Implementations of the present disclosure generally relate to an improved substrate support pedestal assembly. In one implementation, the substrate support pedestal assembly includes a shaft. The substrate support pedestal assembly further includes a substrate support pedestal, mechanically coupled to the shaft. The substrate support pedestal comprises substrate support plate coated on a top surface with a ceramic material.

According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include forming a trench and exposing a portion of a first film at a bottom portion of the trench by removing a portion of a second film by performing dry etching using a gas including a first element. The second film is provided on the first film. The first film includes Al.sub.x1Ga.sub.1-x1N (0x1<1). The second film includes Al.sub.x2Ga.sub.1-x2N (0<x2<1 and x1<x2). The method can include performing heat treatment while causing the portion being exposed of the first film to contact an atmosphere including NH.sub.3, forming an insulating film on the portion of the first film after the heat treatment, and forming an electrode on the insulating film.

Method and system for enhanced charged particle beam processes for carbon removal. With the method and system for enhancing carbon removal, associated method and system for decreasing levels of carbon impurity in depositions, also using a precursor gas in charged particle beam processes (and particularly focused ion beam methodologies), are provided. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Implementations disclosed herein relate to methods for controlling substrate outgassing of hazardous gasses after an epitaxial process. In one implementation, the method includes providing a substrate comprising an epitaxial layer into a transfer chamber, wherein the transfer chamber has an ultraviolet (UV) lamp module disposed adjacent to a top ceiling of the transfer chamber, flowing an oxygen-containing gas into the transfer chamber through a gas line of the transfer chamber, flowing a non-reactive gas into the transfer chamber through the gas line of the transfer chamber, activating the UV lamp module to oxidize residues or species on a surface of the substrate to form an outgassing barrier layer on the surface of the substrate, ceasing the flow of the oxygen-containing gas and the nitrogen-containing gas into the transfer chamber, pumping the transfer chamber, and deactivating the UV lamp module.

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

The present disclosure provides a gas purge device and a gas purge method for purging a wafer container to clean wafers. The gas purge device includes a first nozzle and a gas gate. The first nozzle is coupled to a front-opening unified pod (FOUP) through a first port of the FOUP. The gas gate is coupled to the first nozzle via a first pipe. The gas gate includes a first mass flow controller (MFC), a second MFC, and a first switch unit. The first MFC is configured to control a first flow of a first gas. The second MFC is configured to control a second flow of a second gas. The first switch unit is coupled to the first MFC and the second MFC, and is configured to provide the first gas to the first nozzle through the first pipe or receive the second gas from the first nozzle through the first pipe according to a process configuration.

A substrate cleaning system include a chamber and a substrate stage positioned within the chamber. The substrate stage is configured to secure a substrate for cleaning with a cleaning head. The substrate cleaning system includes a robot configured to transfer the substrate between a storage receptable and the substrate stage. The cleaning head includes a disposable electrode ribbon loaded on a roller assembly. The disposable electrode ribbon includes a positive electrode and a negative electrode and is configured to electrostatically clean the substrate by electrostatically removing particles from the substrate. The roller assembly is configured to advance the disposable electrode ribbon following cleaning of the substrate.

Methods for selectively forming a dielectric layer on a metallic surface relative to a dielectric surface are disclosed. The disclosed selective formation methods include selective passivation processes, and selective deposition processes.

An EFEM includes a wafer transportation part having a wafer transportation room passed by a wafer transported to a processing room and a load port part airtightly connecting a main opening formed on a container housing the wafer to the room. The transportation part includes a downward current forming device for forming a downward current in the room and a current plate arranged in the room and partly introducing the current into the container connected to the room via the opening. The load port part includes an installation stand for installing the container, a bottom nozzle for communicating with a bottom hole formed at a position distant from the opening more than a bottom surface middle on a bottom surface of the container, and a gas discharge passage for discharging a gas in the container to an outside thereof via the nozzle.