A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.

A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550? C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

The invention relates to the use of thionyl chloride and related materials for dry etching of internal surfaces of metalorganic vapor phase epitaxy (MOVPE) reactors to remove deposits. The method is also useful for the dry etching of process substrates within such reactors for cleaning and processing of those substrates. The invention may be particularly adaptable to chemical vapor deposition reactors used in the manufacture of high brightness LED's based on III-V semiconductors such as GaN and related materials. Features of the process include thermal, UV, and plasma activated dry cleaning, and the use of etchant gases such as COCl.sub.2, COBr.sub.2, COl.sub.2, SOl2, SOCl.sub.2, SOBr.sub.2, SO2Cl.sub.2, SO.sub.2Br.sub.2, NOCI, NOBr, NOl, S.sub.2Cl.sub.2, S.sub.2Br.sub.2, SCI.sub.2, SBr.sub.2, SOClBr, SOClF and SOFBr, either formed from neat materials or combinations of constituent gases such as CO, SO, SO.sub.2 or NO with halogens, to achieve the desired effect.

Disclosed is a wafer processing apparatus and method. The wafer processing apparatus comprises a chamber, which is a sealed structure having an openable baffle, and is internally provided with an immersion tank having a waste liquid discharge port; a vacuum system for adjusting and maintaining a pressure inside the chamber; a gas supply system comprising an inert gas supply unit and an organic solvent vapor supply unit respectively supplying an inert gas and an organic solvent vapor to the chamber; a temperature control system for adjusting the temperature inside the chamber. According to the present invention, the problems present in existing wafer drying modes can be solved, and in particular, the present invention is well adaptable to a trend of integrated circuit devices developed from a two-dimensional planar structure to a three-dimensional structure in morphology and having more and more increased density.

A manufacturing system and a method for forming a clean interface between a functional layer and a 2D layered semiconductor are provided herein. In the steps of the method, the substrate equipped with the 2D layered semiconductor is exposed to a reaction gas, and a stimulus is applied to the reaction gas to generate active particles having higher selectivity toward contaminants on the exposed surface of the 2D layered semiconductor so that the contaminants can be decomposed and removed. Additionally, the contaminants can be removed without damage to the 2D layered semiconductor. A functional layer is in-situ deposited to be in contact with the 2D layered semiconductor. Without the contaminants, a clean interface between the functional layer and the 2D layered semiconductor can be obtained and the 2D layered semiconductor can exhibit better electrical properties.

Methods of manufacturing electronic devices, e.g., logic devices or memory devices, are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; pre-treating the top surface of the film stack to form a treated surface; exposing the treated surface to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.

The production method of a substrate with a patterned film according to the present disclosure includes: a cleaning step of performing UV/ozone cleaning or oxygen plasma cleaning on a substrate with a patterned film including a substrate and a patterned film on the substrate, to obtain a first substrate with a patterned film; and a heating step of heating the first substrate with a patterned film to obtain a second substrate with a patterned film, wherein the patterned film of the first substrate with a patterned film has a contact angle decreased in the cleaning step, and the patterned film of the second substrate with a patterned film has a contact angle recovered in the heating step.

The production method of a substrate with a patterned film according to the present disclosure includes: a cleaning step of performing UV/ozone cleaning or oxygen plasma cleaning on a substrate with a patterned film to obtain a first substrate with a patterned film, the substrate with a patterned film including a substrate and a patterned film on the substrate, the patterned film containing a fluorine-containing copolymer having a specific repeating unit; and a heating step of heating the first substrate with a patterned film to obtain a second substrate with a patterned film.

After CMP and before an epitaxial growth step, the substrate is prepared by an atmospheric plasma which includes not only a reducing chemistry, but also metastable states of a chemically inert carrier gas. This removes residues, oxides, and/or contaminants. Optionally, nitrogen passivation is also performed under atmospheric conditions, to passivate the substrate surface for later epitaxial growth.

During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber.