A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

A substrate processing method including a vapor atmosphere filling step in which a vapor atmosphere which contains vapor of a low surface tension liquid whose lower surface tension than a processing liquid is filled around a liquid film of the processing liquid, a thin film region forming step in which, in parallel with the vapor atmosphere filling step, a substrate is rotated at a predetermined thin film region forming speed, to partially remove the processing liquid, thereby forming a thin film region on the liquid film of the processing liquid, a thin film region expanding step in which, in parallel with the vapor atmosphere filling step, the thin film region is expanded to an outer circumference of the substrate, and a thin film removing step in which the thin film is removed from the upper surface after the thin film region expanding step.

An apparatus for producing conditioned water configured to add a pH adjuster and/or a redox potential regulator to ultrapure water to produce conditioned water, the generator including: a chemical tank configured to store a chemical solution containing the pH adjuster and/or the redox potential regulator; a chemical injection pipe configured to inject the chemical solution in the chemical tank into the ultrapure water; and a degassing device configured to degas the chemical solution injected into the ultrapure water. When producing conditioned water useful as wash water for semiconductor wafers by adding a pH adjuster and/or a redox potential regulator into ultrapure water, the present invention can solve problems such as incorporation of DO from the chemical solution, injection failure and measurement failure of the flow meter due to foaming of the chemical solution, thereby enabling stable production of conditioned water with a low DO concentration and high water quality.

A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gallium arsenide substrate, a thiourea-based passivation layer in contact with at least a top surface of the gallium arsenide substrate, and a capping layer in contact with the thiourea-based passivation layer. The method includes passivating a gallium arsenide substrate utilizing thiourea to form a passivation layer in contact with at least a top surface of the gallium arsenide substrate. The method further includes forming a capping layer in contact with at least a top surface of the passivation layer, and annealing the capping layer and the passivation layer.

A washing water supply arrangement (50) comprises an ultra-pure water production unit (54), a supply pipe (52), an operation control (53) and an ultra-pure water impellent arrangement (55). A first end of the supply pipe (52) is connected to an output from the ultra-pure water production unit (54). A second end of the supply pipe is adapted for being connected to a semiconductor washing apparatus. The operation control (53) is configured for controlling the ultra-pure water production unit (54) to produce a pre-determined amount of ultra-pure water upon demand. The ultra-pure water impellent arrangement (55) has access to a source of an inert gas and is configured for rinsing the supply pipe (52) from water with the inert gas after delivery of the pre-determined amount of ultra-pure water. A semiconductor washing system, a semiconductor production system and a method for supplying washing water are also disclosed.

A cleaning method of a semiconductor structure is provided. The method includes providing a substrate, where the substrate includes a functional surface and a back surface that is opposite to the functional surface. The method also includes forming a fluid passivation film on the functional surface of the substrate. In addition, the method includes after forming the fluid passivation film, performing a first charge removal treatment on the functional surface of the substrate through a wet cleaning process. Further, the method includes after performing the first charge removal treatment, performing a main cleaning treatment on the functional surface and the back surface of the substrate.

A method for cleaning a substrate includes supplying to a substrate on which a resist layer is not formed a film-forming processing liquid which includes a volatile component and forms a film on the substrate, forming a processing film on the substrate by solidifying or curing the film-forming processing liquid supplied on the substrate, and supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate.

A substrate treatment device according to an embodiment includes a placement portion on which a substrate is placed and rotated, a liquid supply portion which supplies a liquid to a surface on an opposite side to the placement portion of the substrate, a cooling portion which supplies a cooling gas to a surface on a side of the placement portion of the substrate, and a control portion which controls at least one of a rotation speed of the substrate, a supply amount of the liquid, and a flow rate of the cooling gas. The control portion brings the liquid present on a surface of the substrate into a supercooled state and causes at least a part of the liquid brought into the supercooled state to freeze.

A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.

A cleaning apparatus includes a gas supply line and a cleaning liquid supply line. A nozzle is connected to the gas and the cleaning liquid supply lines. The nozzle applies the cleaning liquid to a substrate. A gas entrance port at a top of a body of the nozzle is connected to the gas supply line. A first cleaning liquid entrance port is disposed on a sidewall of the nozzle body and is connected to the cleaning liquid supply line. A fluid injection port is disposed at a bottom of the nozzle body and discharges both the gas and the cleaning liquid. An internal passage of the nozzle body connects each of the gas entrance port and the first cleaning liquid entrance port to the fluid injection port. The fluid injection port has a diameter that is greater than a diameter of the first cleaning liquid entrance port.