A method for cleaning a semiconductor wafer, including: inserting a semiconductor wafer into a hydrofluoric acid tank filled with hydrofluoric acid to immerse the semiconductor wafer in the hydrofluoric acid; pulling out the semiconductor wafer from the hydrofluoric acid tank; and then inserting the semiconductor wafer into an ozone water tank filled with ozone water to immerse the semiconductor wafer in the ozone water for cleaning. The semiconductor wafer is inserted into the ozone water tank at a rate of 20000 mm/min or more at least after a lower end of the semiconductor wafer comes into contact with the ozone water until the semiconductor wafer is completely immersed in the ozone water. A method for cleaning a semiconductor wafer which can prevent and remove contaminant from re-adhering in a method in which a semiconductor wafer is cleaned by immersion in hydrofluoric acid and then cleaned by immersion in ozone water.

A method for evaluating a silicon wafer, including: a pre surface defect measuring step for performing a surface defect measurement on the silicon wafer in advance, a cleaning step of alternately repeating on the silicon wafer an oxidation treatment by ozone water and an oxide film removal treatment by hydrofluoric acid under a condition of not completely removing an oxide film formed on a surface of the silicon wafer, and an incremental defect measuring step of performing a surface defect measurement on the silicon wafer after the cleaning step and measuring incremental defects that increased relative to defects measured in the pre surface defect measuring step, wherein the cleaning step and the incremental defect measuring step are alternately performed repeatedly multiple times and the silicon wafer is evaluated based on a measurement result of the incremental defects after each cleaning step.

The present invention relates to a novel provided gallium arsenide substrates as well as the use thereof. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, by way of example by means of ellipsometric lateral substrate mapping for optical contact-free quantitative characterization.

A substrate treatment method is provided, which includes: an organic solvent replacing step of supplying an organic solvent, whereby a liquid film of the organic solvent is formed on the substrate as covering the upper surface of the substrate to replace a rinse liquid with the organic solvent; a substrate temperature increasing step of allowing the temperature of the upper surface of the substrate to reach a first temperature level higher than the boiling point of the organic solvent after the formation of the organic solvent liquid film, whereby a vapor film of the organic solvent is formed below the entire organic solvent liquid film between the organic solvent liquid film and the substrate to levitate the organic solvent liquid film above the organic solvent vapor film; and an organic solvent removing step of removing the levitated organic solvent liquid film from above the upper surface of the substrate.

A gallium arsenide substrate which exhibits at least one surface having a surface oxide layer comprising gallium and arsenic oxides and which exhibits at least one surface having, according to an ellipsometric lateral substrate mapping with an optical surface analyzer, based on a substrate diameter of 150 mm as reference, a defect number of <6000 and/or a total defect area of less than 2 cm.sup.2, wherein a defect is defined as a continuous area of greater than 1000 μm.sup.2 having a deviation from the average measurement signal in elipsometric lateral substrate mapping with an optical surface analyzer of at least ±0.05%.

According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand, and a controller controlling a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, forms a frozen film by freezing the liquid in the super cooled state, and causes crack to generate in the frozen film by decreasing a temperature of the frozen film.

Provided is a hydrophilization treatment liquid for a semiconductor wafer surface, the hydrophilization treatment liquid being capable of imparting hydrophilicity to the semiconductor wafer surface.

A hydrophilization treatment liquid for a semiconductor wafer surface, the hydrophilization treatment liquid comprising water and a compound represented by Formula (1) below, and a total content of the water and the compound represented by Formula (1) below being 95 wt. % or greater.

R.sup.1O—(C.sub.3H.sub.6O.sub.2).sub.n—H  (1)

where R.sup.1 denotes a hydrogen atom, a hydrocarbon group having from 1 to 24 carbon atoms and optionally having a hydroxyl group, or a group represented by R.sup.2CO, the R.sup.2 denoting a hydrocarbon group having from 1 to 24 carbon atoms; and n indicates an average degree of polymerization of a glycerin unit in the parentheses, and is from 2 to 60.

A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

The present invention relates to a scanning system, and more particularly, to a scanning system capable of scanning a bevel region of a wafer subjected to a standard sampling treatment and quickly cleaning a bevel nozzle used in a scanning step. For this purpose, the scanning system of the present invention includes a bevel scanning nozzle unit that has a nozzle groove, through which a bevel portion of a wafer enters and exits, at a lower end side of a bevel nozzle and that scans a bevel region of the wafer with a predetermined volume of a scanning solution; a wafer mounting unit that mounts the wafer thereon and rotates the wafer at a predetermined speed; and a nozzle cleaning unit that has a cleaning chamber filled with a cleaning solution and having a cleaning solution overflow portion and that immerses and cleans the bevel scanning nozzle unit.

A method for detecting impurities on a surface of a silicon wafer for manufacturing semiconductors, the impurities not being able to be detected by a conventional inspection method, a method for manufacturing the silicon wafer for manufacturing semiconductors having the impurities removed from the surface thereof, and a method for screening wafers for manufacturing semiconductors. This method for detecting impurities on a surface of a wafer for manufacturing semiconductors includes: a step for coating the surface of the wafer with a film-forming composition, and performing baking to form a film; and then a step for detecting impurities by means of a wafer inspection tool.