Provided is a treatment liquid ejection method and apparatus capable of significantly increasing productivity and quality by greatly reducing a maintenance time of a head unit, the treatment liquid ejection method including (a) obtaining test image information by test-photographing a treatment liquid test-printed by a head unit, (b) generating nozzle-specific characteristic information by using the test image information, (c) generating print file information to be printed, in consideration of the nozzle-specific characteristic information, (d) reflecting recipe information of a substrate or the head unit to prepare the print file information in an outputtable state, and (e) printing, on the substrate by the head unit, the print file information to which the recipe information is reflected.

An apparatus and method for dispensing treatment liquid, which enable treatment liquid to be accurately dispensed to an intended position on a substrate having a non-planar surface on the basis of measurement information obtained by three-dimensionally measuring the substrate. The apparatus may include: a substrate support unit on which a substrate is seated; a three-dimensional (3D) measurement device configured to three-dimensionally measure the substrate seated on the substrate support unit; a head unit configured to dispense treatment liquid onto the substrate seated on the substrate support unit; and a controller configured to receive actually measured 3D substrate information of the substrate from the 3D measurement device, generate printing pattern image information based on the actually measured 3D substrate information, and apply printing command information to the head unit according to the generated printing pattern image information.

Provided is a method that enables good cleaning of a polished substrate formed of a high-hardness material. Provided is a method of polishing and cleaning a substrate formed of a material having a Vickers hardness of 1500 Hv or more. The method includes: polishing a substrate to be polished using a polishing composition; and cleaning the polished substrate using a cleaner. The polishing composition contains a polishing auxiliary. Furthermore, the cleaner contains a surfactant.

A polishing apparatus is provided. The polishing apparatus includes: a polishing unit configured to polish a substrate by bringing a polishing tool into contact with the substrate and moving the substrate relatively to the polishing tool; a cleaning unit; and a first transfer robot configured to transfer the substrate before polishing to the polishing unit and/or configured to transfer the substrate after polishing from the polishing unit to the cleaning unit. The cleaning unit includes: at least one cleaning module, a buff processing module configured to perform a buff process to the substrate, and a second transfer robot configured to transfer the substrate between the cleaning module and the buff processing module, the second transfer robot being different from the first robot.

A method, comprising: providing an adjustable distributor assembly disposed within a showerhead configured to provide selectively adjustable openings through which a cleaning material passes; determining an initial value of a configurable parameter of an adjustable distributor assembly; performing an amount/thickness measurement of a layer including polymeric residues and metal oxide deposits at a cleaning surface of a wafer by a monitoring device; determining whether a variation in the amount/thickness measurement is within an acceptable range; and in response to the variation in the amount/thickness measurement that is not within the acceptable range, automatically adjusting the configurable parameter of the adjustable distributor assembly to set the variation in the amount/thickness measurement within the acceptable range so that the cleaning material that passes through the selectively adjustable openings of the adjustable distributor assembly reduces metal oxide deposits.

In a method of forming a heat dissipating structure for a semiconductor chip, a soldering material is disposed on a top surface of the semiconductor chip. A first region of metal plating is formed on a surface of a lid. The first region has a first width and a first length. The first width is larger than a second width of the top surface of the semiconductor chip and the first length is larger than a second length of the top surface of the semiconductor chip. The lid is placed over the semiconductor chip so that the first region of metal plating of the lid is disposed over the soldering material to bond the lid to the semiconductor chip by a soldering material layer having an inverted trapezoidal shape between the lid and the top surface of the semiconductor chip.

A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

The present application relates to semiconductor integrated circuit manufacturing equipment, in particular to a cleaning fluid guide device for wet cleaning equipment, wherein a positive voltage end and a negative voltage end are provided on both ends of a nozzle to apply an electric field to a cleaning fluid sprayed by the nozzle, and the electric field guides the cleaning fluid to form an included angle θ between the cleaning fluid and a wafer backside, such that spraying of the cleaning fluid does not always start from the center of the wafer backside, avoiding the problem that the center of the wafer backside is relatively thin while the edge thereof is relatively thick after a plurality of repeated wet cleaning processes, and thereby improving the yield of semiconductor devices.

A method for cleaning a substrate includes supplying, to a substrate which does not have a resist formed thereon, a film-forming processing liquid which includes a volatile component and forms a processing film, volatilizing the volatile component of the film-forming processing liquid such that the film-forming processing liquid on the substrate is solidified or cured and that the processing film is formed on the substrate, heating a peeling processing liquid which peels off the processing film from the substrate without dissolving the processing film such that a heated peeling processing liquid is prepared, and supplying, to the processing film formed on the substrate, the heated peeling processing liquid such that the heated peeling processing liquid peels off the processing film from the substrate without dissolving the processing film.

An InP substrate, being a group III-V compound semiconductor substrate, that includes, on a main surface thereof, 0.22 particles/cm.sup.2 that have a particle diameter of at least 0.19 μm or 20 particles/cm.sup.2 that have a particle diameter of 0.079 μm. An InP substrate with an epitaxial layer, being a group III-V compound semiconductor substrate with an epitaxial layer, includes: the InP substrate and an epitaxial layer arranged upon the main surface of the InP substrate; and, upon the main surface thereof when the thickness of the epitaxial layer is 0.3 μm, no more than 10 LPD that have a circle-equivalent diameter of at least 0.24 μm, per cm.sup.2, or no more than 30 LPD that have a circle-equivalent diameter of at least 0.136 μm, per cm.sup.2. As a result, a group III-V compound semiconductor substrate capable of reducing defects in an epitaxial layer grown upon a main surface thereof and a group III-V compound semiconductor substrate with an epitaxial layer are provided.