Disclosed is a method of forming a fine silicon pattern with a high aspect ratio for fabrication of a semiconductor device. The method includes a cleaning process of removing organic residue or reside originating in fumes using a cleaning solution, thereby enabling formation of a desired pattern while preventing the pattern from being lifted. Thus, the present disclosure enables formation of a fine pattern by using a novel cleaning method.

To provide a cleaning agent that can remove impurities such as metal polishing dust adhering to a semiconductor substrate without corroding metal and can prevent re-adhesion of the impurities. The semiconductor substrate cleaning agent of the present invention contains at least the following component (A) and component (B): Component (A): a water-soluble oligomer having a weight average molecular weight of not less than 100 and less than 10000; and Component (B): water. It is preferable that the water-soluble oligomer is at least one compound selected from compounds represented by the following formulas (a-1) to (a-3).
R.sup.a1O—(C.sub.3H.sub.6O.sub.2).sub.n—H  (a-1)
R.sup.a2O—(R.sup.a3O).sub.n′—H  (a-2)
(R.sup.a4).sub.3-s—N—[(R.sup.a5O).sub.n″—H].sub.s  (a-3)

Provided is an evaluation method of a semiconductor wafer having a polished surface, the method including a cleaning process of cleaning the semiconductor wafer with one or more kinds of cleaning liquid, measuring an LPD of the polished surface both before and after the cleaning process with a laser surface inspection device, and distinguishing the type of defect or foreign substance measured as the LPD, based on measurement results obtained in the measuring, according to distinguishing standards shown in Table A.

TABLE-US-00001 TABLE A Type of Defect or Measurement Result Foreign Substance LPD where a detection size PID X before the cleaning process and a detection size Y after the cleaning process fulfill the relationship X < Y LPD that is detected before Normal particle the cleaning process but is not detected after the cleaning process LPD where a detection size Firmly-adherent particle X before the cleaning process and a detection size Y after the cleaning process fulfill the relationship X ≥ Y

The present invention provides a means capable of improving a residue removing effect and improving storage stability in a composition for surface treatment which is used for reducing residues on a surface of an object to be polished after being polished chemical mechanical polishing. The present invention relates to a composition for surface treatment, wherein the composition contains a solvent and a dissolved gas, a concentration of the dissolved gas is 0.01 mg/L or more and 10 mg/L or less with respect to a total volume of the composition and the composition is used for reducing residues on a surface of an object to be polished after being polished by chemical mechanical polishing.

The present application provides a method and a device of chemical mechanical polishing (CMP). The method comprises providing a semiconductor wafer to be subjected to polishing; conducting a CMP process to the wafer, wherein the wafer is on a first plane; conducting a hanging treatment, wherein, in the hanging treatment, the wafer is on a second plane above the first plane, the wafer is hanged to expose the lower surface, and the wafer is in rotation. According to the present application, the hanging treatment can remove the slurry, the polishing particles and byproducts from the wafer surface, therefore, it prevents from the adverse effects caused by the polishing particles and byproducts on the wafer in the following process.

Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.

The present application relates to semiconductor integrated circuit manufacturing equipment, in particular to a cleaning fluid guide device for wet cleaning equipment, wherein a positive voltage end and a negative voltage end are provided on both ends of a nozzle to apply an electric field to a cleaning fluid sprayed by the nozzle, and the electric field guides the cleaning fluid to form an included angle θ between the cleaning fluid and a wafer backside, such that spraying of the cleaning fluid does not always start from the center of the wafer backside, avoiding the problem that the center of the wafer backside is relatively thin while the edge thereof is relatively thick after a plurality of repeated wet cleaning processes, and thereby improving the yield of semiconductor devices.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus comprising: a treating vessel including an outer cup and an inner cup placed in an inner side of the outer cup, the inner cup and the outer cup in combination defining a recollecting route for a recollecting a liquid; a rotatable spin head placed within the treating vessel on which a cleaning jig is placed; wherein the treating vessel comprises a first protrusion protruding from an inner side surface of the outer cup to direct a cleaning liquid scattering from the cleaning jig toward a surface of the inner cup.

The present invention relates to a method for coating a photovoltaic panel, and a photovoltaic power generating device using same and, more specifically, to a method for coating a photovoltaic panel, and a photovoltaic power generating device using same, wherein the method inhibits various pollutants such as dust and salt from attaching to the surface of a photovoltaic panel so as to increase power generation efficiency. The method for coating a photovoltaic panel, of the present invention, comprises: a water washing step of washing the surface of the photovoltaic panel by, spraying water thereonto; a cleaning liquid applying step of applying a cleaning liquid to the surface of the photovoltaic panel after the water washing step; a rinsing step of spraying washing water after the cleaning liquid applying step so as to remove pollutants and the cleaning liquid on the surface of the photovoltaic panel; and a coating liquid applying step of applying a coating liquid to the surface of the photovoltaic panel after the rinsing step so as to form an anti-stain coating film.

Embodiments herein describe techniques for a semiconductor device including a Ge substrate. A passivation layer may be formed above the Ge substrate, where the passivation layer may include one or more molecular monolayers with atoms of one or more group 15 elements or group 16 elements. In addition, a low-k interlayer may be above the passivation layer, and a high-k interlayer may be above the low-k interlayer. Furthermore, a metal contact may be above the high-k interlayer. Other embodiments may be described and/or claimed.