To provide a cleaning agent that can remove impurities such as metal polishing dust adhering to a semiconductor substrate without corroding metal and can prevent re-adhesion of the impurities.

The semiconductor substrate cleaning agent of the present invention contains at least the following component (A) and component (B):

Component (A): a water-soluble oligomer having a weight average molecular weight of not less than 100 and less than 10000; and
Component (B): water.

It is preferable that the water-soluble oligomer is at least one compound selected from compounds represented by the following formulas (a-1) to (a-3).

R.sup.a1O—(C.sub.3H.sub.6O.sub.2).sub.n—H  (a-1)

R.sup.a2O—(R.sup.a3O).sub.n′—H  (a-2)

(R.sup.a4).sub.3-s—N—[(R.sup.a5O).sub.n″—H].sub.s  (a-3)

A device for converting radiation to electrical energy having a hybrid interface structure comprising an etched silicon surface and organic layer connected thereto. The invention provides methods for the preparation of said etched silicon surface and said hybrid interface.

A substrate washing device includes a substrate holding mechanism 70 that holds a substrate W, a substrate rotating mechanism 72 that rotates the substrate W held by the substrate holding mechanism 70, and a two-fluid nozzle 46 that ejects a two-fluid jet toward a surface of the rotating substrate W. The two-fluid nozzle 46 is formed of a conductive material. Accordingly, the electrification amount of droplets ejected as the two-fluid jet from the two-fluid nozzle 46 can be suppressed.

A semiconductor wafer has a base material. The semiconductor wafer may have an edge support ring. A grinding phase of a surface of the semiconductor wafer removes a portion of the base material. The grinder is removed from or lifted off the surface of the semiconductor wafer during a separation phase. The surface of the semiconductor wafer and under the grinder is rinsed during the grinding phase and separation phase to remove particles. A rinsing solution is dispensed from a rinsing solution source to rinse the surface of the semiconductor wafer. The rinsing solution source can move in position while dispensing the rinsing solution to rinse the surface of the semiconductor wafer. The grinding phase and separation phase are repeated during the entire grinding operation, when grinding conductive TSVs, or during the final grinding stages, until the final thickness of the semiconductor wafer is achieved.

Various embodiments comprise apparatuses for cleaning and drying a substrate and methods of operating the apparatuses. In one embodiment, an exemplary apparatus includes a vertical substrate holder to hold and rotate the substrate at various speeds. An inner shield and an outer shield, when in a closed position, surround the vertical substrate holder during operation of the apparatus. Each of the inner shield and the outer shield can operate independently in at least one of rotational speed and direction from the other shield. A front-side spray jet and a back-side spray jet are arranged to spray at least one fluid onto both sides of the substrate and edges of the substrate substantially concurrently. A gas flow, combined with a high rotational-speed of the shields and substrate, assist in drying the substrate. Additional apparatuses and methods of forming the apparatuses are disclosed.

A GaAs substrate has a first surface. The sum of the number of particles having a longer diameter of more than or equal to 0.16 μm which are present in the first surface, per cm.sup.2 of the first surface, and the number of damages having a longer diameter of more than or equal to 0.16 μm which are present in a second surface, per cm.sup.2 of the second surface, is less than or equal to 2.1, the second surface being formed by etching the first surface by 0.5 μm in a depth direction.

A break-in apparatus 100 has a supply unit 20 for supplying a cleaning liquid, a substrate support unit 30 for holding a dummy substrate W1 and a cleaning member holding unit 40 for performing a break-in processing on the cleaning member 200 by rotating the cleaning member 200 and bringing the cleaning member 200 into contact with the dummy substrate W1.

A cleaning process monitoring system, comprising: a cleaning container comprising an inlet for receiving a cleaning solution and an outlet for draining a waste solution; a particle detector coupled to the outlet and configured to measure a plurality of particle parameters associated with the waste solution so as to provide a real-time monitoring of the cleaning process; a pump coupled to the cleaning container and configured to provide suction force to draw solution through the cleaning system; a controller coupled to the pump and the particle detector and configured to receive the plurality of particle parameters from the particle detector and to provide control to the cleaning system; and a host computer coupled to the controller and configured to provide at least one control parameter to the controller.

Disclosed are a substrate treating apparatus and a substrate treating method. According to an embodiment of the inventive concept, the purge operation of the purge nozzle is performed while the nozzle arm is moved from the first substrate support member to the second substrate support member, it hardly influences the operation of treating the substrate while the nozzle arm is moved from the first substrate support member to the second substrate support member. According to an embodiment of the inventive concept, the substrate treating apparatus may perform an operation of purging the photosensitive liquid nozzle while the treatment liquid supply unit performs a process of supplying the photosensitive liquid to the substrate. Accordingly, because the operation of purging the photosensitive liquid nozzle is performed at the same time when the substrate treating apparatus performs a process, productivity may be improved.

A substrate processing apparatus includes a substrate processing part that supplies a processing liquid from a processing liquid supply part to a mounted substrate to execute liquid processing, a liquid drainage part that has a recovery channel connected to a storage part that stores the processing liquid and drains the processing liquid used for the liquid processing, and a control unit executes a processing recipe for the liquid processing and a cleaning recipe for cleaning the substrate processing part and the liquid drainage part. The control unit executes a cleaning operation for supplying a cleaning liquid from a cleaning liquid supply part to clean the substrate processing part and the liquid drainage part and subsequently executes a return operation for supplying the processing liquid from the processing liquid supply part to replace the cleaning liquid attached to the substrate processing part and the liquid drainage part with the processing liquid.