The present disclosure describes a wafer cleaning process in which a drained cleaning solution, which is used to remove metal contaminants from the wafer, is sampled and analyzed to determine the concentration of metal ions in the solution. The wafer cleaning process includes dispensing, in a wafer cleaning station, a chemical solution on one or more wafers; collecting the dispensed chemical solution; determining a concentration of contaminants in the chemical solution; in response to the concentration of the contaminants being greater than a baseline value, adjusting one or more parameters in the cleaning process; and in response to the concentration of the contaminants being equal to or less than the baseline value, transferring the one or more wafers out of the wafer cleaning station.

In an embodiment, a method includes: receiving a wafer from a first dilution tank; immersing the wafer in a deionization tank, wherein the deionization tank comprises a tank solution that comprises a deionizing solution; determining a metal ion concentration within the tank solution; performing remediation within the deionization tank in response to determining that the metal ion concentration is greater than a threshold value; and moving the wafer to a second dilution tank.

In an embodiment, a method includes: immersing a wafer in a bath within a cleaning chamber; removing the wafer out of the bath through a solvent and into a gas within the cleaning chamber; determining a parameter value from the gas; and performing remediation within the cleaning chamber in response to determining that the parameter value is beyond a threshold value.

A cleaning method applied in semiconductor manufacturing is provided. The method includes: receiving a substrate having a surface; identifying a location of a particle on the surface of the substrate; moving a cleaning apparatus toward the location of the particle; performing a cleaning operation, thereby removing the particle by spraying a cleaning liquid from the cleaning apparatus flowing against gravity and toward the surface of the substrate; detecting the surface of the substrate; and performing a second cleaning operation when a cleaning result of the detection is not acceptable. A semiconductor manufacturing method and a system for cleaning a substrate are also provided.

Cleaning systems and methods for semiconductor fabrication use rotatable and translatable chuck assemblies that incorporate a compact drive system to cause chuck rotation. The system uses an offset drive gear that drives a ring gear. This reduces components whose friction or lubricants might generate undue contamination. The low friction chuck functionality of the present invention is useful in any fabrication tool in which a workpiece is supported on a rotating support during a treatment. The chuck is particularly useful in cryogenic cleaning treatments.

A carrier boat for die package flux cleaning, including: a body having at least one pair of substantially parallel sides, the body comprising one or more die package receptacles each oriented at a non-parallel angle relative to the substantially parallel sides of the body such that, when a die package is seated in a die package receptacle of the one or more die package receptacles, a first pair of opposing sides of a die of the die package are substantially perpendicular to the substantially parallel sides,

The present disclosure describes an apparatus for processing one or more objects. The apparatus includes a carrier configured to hold the one or more objects, a tank filled with a processing agent and configured to receive the carrier, and a spinning portion configured to contact the one or more objects and to spin the one or more objects to disturb a flow field of the processing agent.

Disclosed is a first cleaning apparatus including a first cleaning bath, a cover provided at the upper part of the first cleaning bath, a drainage portion provided at the lower part of the first cleaning bath, a first cleaning unit and a second cleaning unit provided respectively at a first side surface and a second side surface in the first cleaning bath, and first and second moving units configured to move the first and second cleaning units, respectively, wherein each of the first and second cleaning units includes a plurality of cleaning solution supply pipes provided at different heights and a plurality of nozzles provided at each of the cleaning solution supply pipes, the nozzles provided at one cleaning solution supply pipe have identical cleaning solution spray angles, and the nozzles provided at the other cleaning solution supply pipes have different cleaning solution spray angles.

A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

The disclosure provides a pattern collapse free wet clean process for fabricating semiconductor devices. By performing post reactive ion etching (RIE) using a fluorine-containing gas such as C.sub.2F.sub.6, followed by cleaning in a single wafer cleaner (SWC) with diluted hydrofluoric acid (HF) or in a solution of ammonia and HF, a substrate with multiple pattern collapse free high aspect ratio shallow trench isolation (STI) features can be obtained.