A substrate cleaning apparatus (50) that cleans a substrate (S) includes: circumference supporting members (51) that support and rotate the substrate (S); a sponge (541) having a cleaning surface that is brought into contact with the surface to be cleaned of the substrate (S) being rotated by the circumference supporting members (51), and cleans the surface to be cleaned; an arm (53) that moves the sponge (541) in a radial direction of the substrate (S) while maintaining the cleaning surface in contact with the surface to be cleaned; and a controller (60) that controls the contact pressure of the cleaning surface on the surface to be cleaned. When the sponge (541) is located near the edge of the substrate (S), the controller (60) adjusts the contact pressure to a smaller value than that of when the sponge (541) is located near the center of the substrate (S).

[Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] The present invention is a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C).

Disclosed is a method of forming a fine silicon pattern with a high aspect ratio for fabrication of a semiconductor device. The method includes a cleaning process of removing organic residue or reside originating in fumes using a cleaning solution, thereby enabling formation of a desired pattern while preventing the pattern from being lifted. Thus, the present disclosure enables formation of a fine pattern by using a novel cleaning method.

A method for cleaning a semiconductor silicon wafer including: an ozone water treatment step after polishing in ozone water, a step of performing a first ultrasonic-wave-ozone-water treatment of cleaning at room temperature while immersing in ozone water and applying ultrasonic waves; and a step of performing a second ultrasonic-wave-ozone-water treatment of, after the step of performing the first ultrasonic-wave-ozone-water treatment, pulling out the semiconductor silicon wafer from the ozone water, performing rotation process, and cleaning at room temperature while immersing in ozone water and applying ultrasonic waves; wherein the step of performing the second ultrasonic-wave-ozone-water treatment is performed, and a hydrofluoric acid treatment step and an ozone water treatment step are performed. Accordingly, a method for cleaning a semiconductor silicon wafer and an apparatus for cleaning by which projecting defects on the wafer surface and the degradation of surface roughness can be suppressed to improve wafer quality reduce costs.

A substrate processing apparatus includes a rotating holder for a substrate, a first nozzle used to eject a jet flow, a second nozzle used to discharge a continuous flow, and a nozzle moving unit integrally moving the first and second nozzles. A landing position of the continuous flow is located closer to a rotation center than a landing position of the jet flow is. At least movement paths of the landing positions of the jet flow and the continuous flow or flow directions of the continuous flow and the jet flow are different from each other. The movement paths are made to be different from each other by locating the landing position of the continuous flow downstream of the movement path of the landing position of the jet flow. The flow directions are made to be different from each other by tilting the continuous flow.

A method for manufacturing a silicon carbide substrate includes steps of preparing a silicon carbide substrate having a main surface, polishing the main surface of the silicon carbide substrate using a polishing agent containing a metal catalyst, and cleaning the silicon carbide substrate after the step of polishing. The step of cleaning includes a step of cleaning the silicon carbide substrate with aqua regia.

Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

Embodiments described herein relate to semiconductor and metal substrate surface preparation and controlled growth methods. An example application is formation of an atomic layer deposition (ALD) control layer as a diffusion barrier or gate dielectric layer and subsequent ALD processing. Embodiments described herein are believed to be advantageously utilized concerning gate oxide deposition, diffusion barrier deposition, surface functionalization, surface passivation, and oxide nucleation, among other processes. More specifically, embodiments described herein provide for silicon nitride ALD processes which functionalize, passivate, and nucleate a SiN.sub.x monolayer at temperatures below about 300° C.

According to various embodiments, a method may include: filling a chamber and a tube coupled to the chamber with a first liquid, the tube extending upwards from the chamber; introducing a portion of a second liquid into the first liquid in the tube; and at least partially removing the first liquid from the chamber to empty the tube into the chamber so that a continuous surface layer from the introduced second liquid is provided on the first liquid in the chamber.

This liquid treatment method for substrates involves performing: a liquid treatment step for liquid-treating a substrate with a treatment liquid; a rinse treatment step for rinsing the liquid-treated substrate with a rinsing liquid; a water-repellency treatment step for subjecting the rinsed substrate to a water-repellency treatment using a water-repellency-imparting solution; next, a substitution treatment step for subjecting the substrate subjected to the water-repellency treatment to a substitution treatment acceleration liquid; a cleaning treatment step for cleaning the substrate subjected to the water-repellency treatment by using a cleaning solution; and thereafter, a drying treatment step for substituting the cleaning solution with a drying solution having a higher volatility than that of the cleaning solution, and removing the drying solution from the substrate. Thus, it is possible to prevent pattern collapse during the drying treatment, and to decrease particles caused by watermarks.