An apparatus for cleaning a wafer includes a wafer station configured to hold the wafer, and a first and a second dispensing system. The first dispensing system includes a first swivel arm, and a first nozzle on the first swivel arm, wherein the first swivel arm is configured to move the first nozzle over and aside of the wafer. The first dispensing system includes first storage tank connected to the first nozzle, with the first nozzle configured to dispense a solution in the first storage tank. The second dispensing system includes a second swivel arm, and a second nozzle on the second swivel arm, wherein the second swivel arm is configured to move the second nozzle over and aside of the wafer. The second dispensing system includes a second storage tank connected to the second nozzle, with the second nozzle configured to dispense a solution in the second storage tank.

A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

A substrate processing method includes step S51, step S52, and step S6. In step S51, a substrate immersed in a rinsing liquid is lifted from the rinsing liquid and the substrate is immersed in a rinsing liquid stored in a tank in a chamber while an organic solvent having a surface tension smaller than that of the rinsing liquid adheres to the substrate. In step S52, the substrate is lifted from the rinsing liquid. In step S6, a vapor of an organic solvent having a surface tension smaller than that of the rinsing liquid is supplied into the chamber in which the lifted substrate exists.

A cleaning solution includes a first solvent having Hansen solubility parameters 25>δ.sub.d>13, 25>δ.sub.p>3, and 30>δ.sub.h>4; an acid having an acid dissociation constant, pKa, of −11<pKa<4, or a base having a pKa of 40 > pKa>9.5; and a surfactant. The surfactant is one or more of an ionic surfactant, a polyethylene oxide and a polypropylene oxide, a non-ionic surfactant, and combinations thereof.

A method for manufacturing a bonded wafer, includes: ion-implanting a gas ion such as a hydrogen ion from a surface of a bond wafer, thereby forming an ion-implanted layer; bonding the bond wafer and a base wafer; producing a bonded wafer having a thin-film on the base wafer by delaminating the bond wafer along the ion-implanted layer; and performing an RTA treatment on the bonded wafer in a hydrogen gas-containing atmosphere; wherein a protective film is formed onto the surface of the thin-film in a heat treatment furnace in the course of temperature-falling from the maximum temperature of the RTA treatment before the bonded wafer is taken out from the heat treatment furnace; and then the bonded wafer with the protective film being formed thereon is taken out from the heat treatment furnace, and is then cleaned with a cleaning liquid which can etch the protective film and the thin-film.

A liquid treatment method includes: supplying a first organic solvent to a substrate with the substrate being held horizontally by a substrate holder; and thereafter supplying a second organic solvent to a substrate held by the substrate holder, the second solvent having a higher cleanliness than the first solvent.

An ultrasonic cleaning apparatus and an ultrasonic cleaning method for an edge face of a substrate help prevent re-contamination caused by splashing or the like of ultrasonic wave propagating water sprayed onto an edge face of an object to be cleaned. An ultrasonic wave transmitting tube provided to continue from the spot shower and configured to transmit and spray the ultrasonic wave propagating water to the substrate is provided, the ultrasonic wave transmitting tube is installed so as not to be positioned on the substrate, the substrate is retained so that the surface of the substrate assumes a horizontal state, and ultrasonic wave propagating water is sprayed to the edge face, which constitutes an outer periphery of the substrate arranged in a space from the ultrasonic wave transmitting tube in a direction of tangent line of the edge face while rotating the substrate by a rotatable rotation retaining portion.

An apparatus and a method for processing one or more surfaces of a semiconductor wafer with one or more ozone-containing fluids are provided. The apparatus includes an ozone generator, a solvent flask, a gas-liquid mixing device, and a processing chamber capable of receiving the semiconductor wafer. The apparatus may also include one or more gas-liquid separation devices and switching valves. The processing chamber allows the ozone-containing fluids to enter the processing chamber for treating the wafer surface. The effectiveness of the treatment is ensured by enhancing the ozone concentration of the ozone-containing fluids inside the processing chamber, in either or both gas and liquid phases. The employment of a micro chamber as the processing chamber also helps to reduce the consumption of the treatment gas and liquid, as well as the resulted waste emission.

A substrate washing device includes a substrate holding mechanism 70 that holds a substrate W, a substrate rotating mechanism 72 that rotates the substrate W held by the substrate holding mechanism 70, and a two-fluid nozzle 46 that ejects a two-fluid jet toward a surface of the rotating substrate W. The two-fluid nozzle 46 is formed of a conductive material. Accordingly, the electrification amount of droplets ejected as the two-fluid jet from the two-fluid nozzle 46 can be suppressed.

Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.